Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs

• Published in: IEEE transactions on electron devices Vol. 63; no. 7; pp. 2714 - 2721
• Main Authors: Hsu, Chung-Chun, Chi, Wei-Chun, Tsai, Yi-He, Chou, Chen-Han, Chen, Che-Wei, Chien, Hung-Pin, Chuang, Shang-Shiun, Luo, Guang-Li, Lee, Yao-Jen, Chien, Chao-Hsin
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.07.2016; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Agglomeration; Alloy development; Alloys; Annealing; Contact; Crystallinity; Devices; Electric potential; Germanium oxides; Junctions; microwave-activated annealing (MWA); MOSFET; MOSFETs; Nickel; NiGePt; p-channel MOSFET (pMOSFET); Schottky barrier height (SBH); Surface morphology; ternary-phase alloy; Thermal stability; p-channel MOSFET (pMOSFET); ternary-phase alloy; Crystallinity; Schottky barrier height (SBH); microwave-activated annealing (MWA); NiGePt

This paper presents a high-performance Ge p-channel MOSFET (pMOSFET) with NiGePt as a ternary-phase alloy of Schottky source/drain (S/D) formed through low-temperature microwave-activated annealing (MWA). We fabricated a NiGePt alloy contact with uniform crystallinity through structural engineering...