Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs
This paper presents a high-performance Ge p-channel MOSFET (pMOSFET) with NiGePt as a ternary-phase alloy of Schottky source/drain (S/D) formed through low-temperature microwave-activated annealing (MWA). We fabricated a NiGePt alloy contact with uniform crystallinity through structural engineering...
Saved in:
Published in | IEEE transactions on electron devices Vol. 63; no. 7; pp. 2714 - 2721 |
---|---|
Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.07.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | This paper presents a high-performance Ge p-channel MOSFET (pMOSFET) with NiGePt as a ternary-phase alloy of Schottky source/drain (S/D) formed through low-temperature microwave-activated annealing (MWA). We fabricated a NiGePt alloy contact with uniform crystallinity through structural engineering and MWA. We clarified the phenomena of thermal reaction and diffusion for forming ternary-phase alloys using MWA properties such as thermal dynamics and ionic transportation. The ternary-phase NiGePt alloy is crucial for improving the off-leakage current of the junction. A lower process temperature is beneficial for eliminating surface roughness and reducing alloy agglomeration of the Schottky contact S/D. Consequently, the fabricated NiGePt/n-Ge Schottky junction exhibited a high effective barrier height (ΦBn) of 0.59 eV, resulting in a high junction current ratio of more than 10 5 at an applied voltage of |V a | = 1 V. In addition, we exploited the advantages of low-temperature microwave annealing to fabricate the pMOSFET, which includes a GeO 2 passivation layer and a Schottky S/D. Our ternary Schottky Ge pMOSFET (L = 4μm) exhibited high I ON /I OFF ratios of approximately 3.7 × 10 3 (I D ) and 1.3 × 10 5 (I S ) and a moderate subthreshold swing of 126 mV/dec. |
---|---|
Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2016.2570284 |