Ultrafast high-temperature sintering and densification of ZrC-based ceramics
Zirconium carbide (ZrC) ceramics are promising candidates for high-temperature structural components and nuclear reactors. However, their poor sinterability has limited widespread application. This study explored the sintering and densification of ZrC-based ceramics with graphite or B4C additive usi...
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| Published in | Journal of the European Ceramic Society Vol. 44; no. 10; pp. 5569 - 5578 |
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| Main Authors | , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier Ltd
01.08.2024
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0955-2219 1873-619X |
| DOI | 10.1016/j.jeurceramsoc.2024.03.037 |
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| Abstract | Zirconium carbide (ZrC) ceramics are promising candidates for high-temperature structural components and nuclear reactors. However, their poor sinterability has limited widespread application. This study explored the sintering and densification of ZrC-based ceramics with graphite or B4C additive using ultrafast high-temperature sintering (UHS). A nearly fully dense ZrC ceramic (> 98%) could be obtained by adding 2.5 wt% B4C additive via ultrafast high-temperature sintering at 2300 °C within 3 min. Additionally, the results revealed that adding graphite into ZrC was beneficial to reduce the grain size but detrimental to densification. Compared to ZrC ceramics sintered using conventional pressureless sintering (PLS) at 2400 °C for 60 min, ZrC-based ceramics with 2.5 wt% B4C sintered via UHS at 2400 °C for 30 s exhibited higher relative densities, smaller grain sizes, and greater Vickers hardness due to faster heating rates and shorter sintering processes. |
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| AbstractList | Zirconium carbide (ZrC) ceramics are promising candidates for high-temperature structural components and nuclear reactors. However, their poor sinterability has limited widespread application. This study explored the sintering and densification of ZrC-based ceramics with graphite or B4C additive using ultrafast high-temperature sintering (UHS). A nearly fully dense ZrC ceramic (> 98%) could be obtained by adding 2.5 wt% B4C additive via ultrafast high-temperature sintering at 2300 °C within 3 min. Additionally, the results revealed that adding graphite into ZrC was beneficial to reduce the grain size but detrimental to densification. Compared to ZrC ceramics sintered using conventional pressureless sintering (PLS) at 2400 °C for 60 min, ZrC-based ceramics with 2.5 wt% B4C sintered via UHS at 2400 °C for 30 s exhibited higher relative densities, smaller grain sizes, and greater Vickers hardness due to faster heating rates and shorter sintering processes. |
| Author | Zhu, Benpeng Zhang, Yue Yang, Xiaofei Qiu, Xinchao Xu, Jianbo Zhang, Bowen Zhang, Shengping Hu, Mengchen Zhong, Fugang Chen, Shi Yang, Zewei Ou-Yang, Jun |
| Author_xml | – sequence: 1 givenname: Bowen surname: Zhang fullname: Zhang, Bowen organization: School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, PR China – sequence: 2 givenname: Mengchen surname: Hu fullname: Hu, Mengchen organization: School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, PR China – sequence: 3 givenname: Fugang surname: Zhong fullname: Zhong, Fugang organization: School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, PR China – sequence: 4 givenname: Shengping surname: Zhang fullname: Zhang, Shengping organization: School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, PR China – sequence: 5 givenname: Zewei surname: Yang fullname: Yang, Zewei organization: School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, PR China – sequence: 6 givenname: Xinchao surname: Qiu fullname: Qiu, Xinchao organization: Beijing Research Institute of Telemetry, Beijing 100076, PR China – sequence: 7 givenname: Jianbo surname: Xu fullname: Xu, Jianbo organization: School of Physics, Liaoning University, Shenyang 110036, PR China – sequence: 8 givenname: Jun surname: Ou-Yang fullname: Ou-Yang, Jun organization: School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, PR China – sequence: 9 givenname: Yue surname: Zhang fullname: Zhang, Yue organization: School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, PR China – sequence: 10 givenname: Benpeng surname: Zhu fullname: Zhu, Benpeng organization: School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, PR China – sequence: 11 givenname: Xiaofei surname: Yang fullname: Yang, Xiaofei organization: School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, PR China – sequence: 12 givenname: Shi surname: Chen fullname: Chen, Shi email: s_chen@mail.hust.edu.cn organization: School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, PR China |
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