Planar nanoscale vacuum channel transistors based on resistive switching

• Published in: Nanotechnology Vol. 35; no. 21; pp. 215205 - 215213
• Main Authors: Zhang, Yan, Zhang, Gengmin, Zhan, Fangyuan, He, Yidan
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 20.05.2024
• Subjects: nanoscale vacuum channel transistors; resistive switching; SiO; nanoscale vacuum channel transistors; SiOx; resistive switching

Resistance switching (RS) offers promising applications in a variety of areas. In particular, silicon oxide (SiOx) under RS can serve as electron sources in new types of miniature vacuum electron tubes. In this work, planar nanoscale vacuum channel transistors (NVCTs) with graphene electrodes and RS...