Planar nanoscale vacuum channel transistors based on resistive switching
Resistance switching (RS) offers promising applications in a variety of areas. In particular, silicon oxide (SiOx) under RS can serve as electron sources in new types of miniature vacuum electron tubes. In this work, planar nanoscale vacuum channel transistors (NVCTs) with graphene electrodes and RS...
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Published in | Nanotechnology Vol. 35; no. 21; pp. 215205 - 215213 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
England
IOP Publishing
20.05.2024
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Subjects | |
Online Access | Get full text |
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