Two-Dimensional Markov Chain Analysis of Radiation-Induced Soft Errors in Subthreshold Nanoscale CMOS Devices

• Published in: IEEE transactions on nuclear science Vol. 57; no. 6; pp. 3768 - 3774
• Main Authors: Jannaty, P, Sabou, F C, Gadlage, M, Bahar, R I, Mundy, J, Patterson, W, Reed, R A, Weller, R A, Schrimpf, R D, Zaslavsky, A
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2010; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Alpha particles; Alpha-particle radiation effects; Channels; CMOS devices; CMOS integrated circuits; Error analysis; Flip-flops; Logic; Logic devices; Markov chains; Markov processes; Mathematical analysis; Nanostructure; Operating temperature; Radiation effects; radiation effects in devices; reliability; Single event upset; Soft errors; SRAM chips; SRAMs

Radiation-induced soft errors have been a reliability concern for logic integrated circuits since their emergence. Feature-size and supply-voltage reduction require the analysis of soft-error sensitivity as a function of technology scaling. In this paper, an analytical framework based on Markov chai...