The study on high efficient AlxGa1−xAs/GaAs solar cells
The investigation of AlxGa1-xAs/GaAs solar cells is carried out by means of both MOCVD and LPE technique. The measurements of illuminated I-V characteristics, dark I-V characteristics and quantum efficiencies were performed for the GaAs solar cells made in author's lab. The measuring results re...
Saved in:
| Published in | Solar energy materials and solar cells Vol. 68; no. 1; pp. 97 - 103 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
2001
|
| Online Access | Get full text |
Cover
Loading…
| Summary: | The investigation of AlxGa1-xAs/GaAs solar cells is carried out by means of both MOCVD and LPE technique. The measurements of illuminated I-V characteristics, dark I-V characteristics and quantum efficiencies were performed for the GaAs solar cells made in author's lab. The measuring results revealed that the quality of materials in GaAs solar cell's structures is the key factor for getting high-efficient GaAs solar cells, but the effect of post-growth technology on the performances of GaAs solar cells is also strong. The 21.95% (AM0, 2x27 cm2, 25 C) high conversion efficiency in a typical GaAs solar cell has been achieved owing to improving the quality of materials as well as optimizing the post-growth technology of devices. 5 refs. |
|---|---|
| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/S0927-0248(00)00348-2 |