Solution-processed PCDTBT capped low-voltage InGaZnOx thin film phototransistors for visible-light detection

• Published in: Applied physics letters Vol. 106; no. 24
• Main Authors: Wang, Han, Xiao, Yubin, Chen, Zefeng, Xu, Wangying, Long, Mingzhu, Xu, Jian-Bin
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 15.06.2015
• Subjects: Applied physics; Carbazoles; Holes (electron deficiencies); Indium gallium zinc oxide; N-type semiconductors; P-n junctions; P-type semiconductors; Photons; Phototransistors; Semiconductor devices; Switches; Thin films; Threshold voltage; Transistors
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4922642

The effects of visible-light detection based on solution processed poly[N-9′′-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′benzothiadiazole) (PCDTBT) capped InGaZnOx (IGZO) phototransistors with Al2Ox serving as gate dielectric are investigated in this paper. The high-k dielectric...