Micro-PL analysis of high current density resonant tunneling diodes for THz applications

• Published in: Applied physics letters Vol. 119; no. 7
• Main Authors: Cito, M., Cimbri, D., Childs, D., Baba, R., Harrison, B. A., Watt, A., Mukai, T., Wasige, E., Hogg, R. A.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 16.08.2021
• Subjects: Applied physics; Budgets; Current density; Electrical properties; Line shape; Low temperature; Manufacturability; Nondestructive testing; Photolithography; Photoluminescence; Quantum wells; Resonant tunneling; Statistical methods; Strain relaxation; Tunnel diodes

Low-temperature micro-photoluminescence (μPL) is used to evaluate wafer structural uniformity of current densities >5mA/μm2 InGaAs/AlAs/InP resonant tunneling diode (RTD) structures on different length scales. Thin, highly strained quantum wells (QWs) are subject to monolayer fluctuations, leadin...