Metal-organic vapor-phase epitaxial growth of InGaN and InAlN for multi-junction tandem solar cells

• Published in: Materials for renewable and sustainable energy Vol. 2; no. 2; pp. 1 - 9
• Main Authors: Yamamoto, A., Sugita, K., Bhuiyan, A. G., Hashimoto, A., Narita, N.
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.06.2013; Springer Nature B.V
• Subjects: Chemistry and Materials Science; Materials Science; Original Paper; Renewable and Green Energy; Multi-junction tandem solar cell; InGaN; InAlN; MOVPE; n-InAlN/p-InGaN hetero-junction

Metal-organic vapor-phase epitaxial (MOVPE) growth of InGaN and InAlN has been studied to prepare a wanted band-gap from 0.65 to 2.5 eV for multi-junction tandem solar cells. The main subjects in the growth of InGaN are the suppression of phase separation and metallic In incorporation and the contro...