Generation of misfit dislocations in semiconductors

• Published in: Journal of applied physics Vol. 62; no. 11; pp. 4413 - 4420
• Main Authors: MAREE, P. M. J, BARBOUR, J. C, VAN DER VEEN, J. F, KAVANAGH, K. L, BULLE-LIEUWMA, C. W. T, VIEGERS, M. P. A
• Format: Journal Article
• Language: English
• Published: Woodbury, NY American Institute of Physics 01.12.1987
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Non metal; Gallium Indium Arsenides Mixed; Deformation; Semiconductor materials; Theoretical study; Experimental study; Solid solution; Inorganic compound; Thin film; Dislocation; Gallium Phosphides; Thickness; Gallium Arsenides; Misfit dislocation; Transmission electron microscopy; Chemical composition; Silicon; Heterojunction; Lattice image
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.339078

The acting slip mechanism for the generation of misfit dislocations in diamond-type–semiconductor heterostructures is investigated with transmission electron microscopy. It is shown that dissociation of the 60°-mixed dislocations can lead to a difference in strain accommodation for tensile and compressive strain. A strain/thickness relation is obtained from the energy expression for nucleation of half-loops. This relation is compared with other theoretical relations and with experimental strain data for Si/GaP(001) and In0.07Ga0.93As/GaAs(001) , measured with transmission electron microscopy and ion blocking.