Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride

• Published in: Applied Physics Letters Vol. 79; no. 13; pp. 1995 - 1997
• Main Authors: Noma, Takashi, Seol, Kwang Soo, Kato, Hiromitsu, Fujimaki, Makoto, Ohki, Yoshimichi
• Format: Journal Article
• Language: English; Japanese
• Published: AIP Publishing 24.09.2001

A broad photoluminescence (PL) around 2.6–2.9 eV is known to appear in hydrogenated silicon oxynitride. Although its origin was reported to be Si–N bonds, it is not so clear since the material contains hydrogen. In the present research, we have confirmed that the same PL appears in silicon oxynitrid...