APA (7th ed.) Citation

Noma, T., Seol, K. S., Kato, H., Fujimaki, M., & Ohki, Y. (2001). Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride. Applied Physics Letters, 79(13), 1995-1997. https://doi.org/10.1063/1.1405806

Chicago Style (17th ed.) Citation

Noma, Takashi, Kwang Soo Seol, Hiromitsu Kato, Makoto Fujimaki, and Yoshimichi Ohki. "Origin of Photoluminescence Around 2.6–2.9 EV in Silicon Oxynitride." Applied Physics Letters 79, no. 13 (2001): 1995-1997. https://doi.org/10.1063/1.1405806.

MLA (9th ed.) Citation

Noma, Takashi, et al. "Origin of Photoluminescence Around 2.6–2.9 EV in Silicon Oxynitride." Applied Physics Letters, vol. 79, no. 13, 2001, pp. 1995-1997, https://doi.org/10.1063/1.1405806.