Prediction and Modeling of Thin Gate Oxide Breakdown Subject to Arbitrary Transient Stresses - Ellis, D F; Yuanzhong Zhou; Salcedo, J A; Hajjar, J; Liou, J J (IEEE transactions on electron devices, 2010)
Keywords: Applied sciences; Breakdown voltage; Charged device model (CDM); Dielectrics; Electric breakdown; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; gate oxide breakdown (GOB); power law (PL); Predictive models; Stress; time-dependent dielectric breakdown (TDDB); Transient analysis; very fast transmission line pulse (VFTLP); Voltage measurement; Stress analysis; very fast transmission line pulse (VFTLP); Electric breakdown; Oxide layer; Electric stress; time-dependent dielectric breakdown (TDDB); Transistor gate; Charged device model; Charged device model (CDM); Modeling; gate oxide breakdown (GOB); Time dependence; Transmission line; Gate oxide; power law (PL); Percolation; Reliability; Power law; Damaging