Characterization of WC–CrAlN heterostructures obtained using a cathodic arc ion plating process

New WC–CrAlN heterostructure films were deposited on Si wafer and S45C steel substrate by a cathodic arc ion plating (CAIP) process. The Al concentration and bilayer repeat period (λ; 2–10 nm) were controlled to obtain a nano-layered structure. We have characterized our samples using X-ray diffracti...

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Bibliographic Details
Published inSurface & coatings technology Vol. 174; pp. 303 - 309
Main Authors Lee, Ho Y., Han, Jeon G., Baeg, Seung H., Yang, Se H.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.09.2003
Subjects
Buffer layer
Heterostructure
WC–CrAlN
Buffer layer
Heterostructure
WC–CrAlN
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Summary:New WC–CrAlN heterostructure films were deposited on Si wafer and S45C steel substrate by a cathodic arc ion plating (CAIP) process. The Al concentration and bilayer repeat period (λ; 2–10 nm) were controlled to obtain a nano-layered structure. We have characterized our samples using X-ray diffraction (XRD), cross-sectional transmission electron microscopy (TEM) and electron diffraction patterns. Mechanical properties of the WC–CrAlN films were characterized using nano-indentation tests, residual stress evaluation and scratch testing. The microhardness of WC–CrAlN films was in the range of 30–43 GPa. The residual stress was reduced below 2 GPa and the adhesion strength obtained was approximately 50 N by alternative deposition of heterostructure (WC–CrAlN) and buffer (WC–Cr) layers.
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ISSN:0257-8972
1879-3347
DOI:10.1016/S0257-8972(03)00352-9