Effect of target–substrate separation on HgCdTe films formed by pulsed laser deposition

• Published in: Journal of crystal growth Vol. 312; no. 7; pp. 914 - 917
• Main Authors: Liu, M., Man, B.Y., Lin, X.C., Li, X.Y.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.03.2010; Elsevier
• Subjects: A1. Crystal structures; A3. Laser epitaxy; Applied sciences; B1. Cadmium compounds; B2. Semiconducting II–VI materials; Cadmium compounds; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Intermetallics; Laser deposition; Materials science; Mercury compounds; Methods of deposition of films and coatings; film growth and epitaxy; Optoelectronic devices; Physics; Pulsed laser deposition; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Separation; Silicon substrates; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; Tellurides; Thin films; A3. Laser epitaxy; B1. Cadmium compounds; A1. Crystal structures; B2. Semiconducting II–VI materials; Cubic lattices; Epitaxy; YAG laser; Surface morphology; Cadmium compound; Pulsed laser deposition; Crystal face; Crystallinity; Surface composition; Photodetector; Thin film; II-VI semiconductors; Cadmium tellurides; Mercury tellurides; B2. Semiconducting II-VI materials; Laser ablation technique; Silicon; Crystalline structure
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2009.12.069

HgCdTe thin films were deposited on Si (1 1 1) substrates at different target–substrate separations by pulsed laser deposition (PLD). The results show that the kinetic energy of the incident particles, and the thickness, crystallinity, elemental composition and surface morphology of the HgCdTe thin films are affected by the change of the target–substrate separation. The HgCdTe films prepared using Nd:YAG laser show cubic phase. The films prepared by PLD on the undoped Si substrates can form SiTe 4 between the HgCdTe film and the Si substrate at small target–substrate separation distance. The formation of interfacial Si–Te may affect the quality of PLD HgCdTe thin films on Si substrates.