Simulations of electron impact ionization rate in GaAs in nonuniform electric fields

A Monte Carlo simulation code has been developed to study the electron impact ionization in GaAs subject to nonuniform electric fields. Results are presented for the spatial evolution of the ionization rate and the average electron energy through a p+-n junction or Schottky barrier. We show that the...

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Published inJournal of applied physics Vol. 60; no. 7; pp. 2626 - 2629
Main Authors Kim, K., Hess, K.
Format Journal Article
LanguageEnglish
Published Woodbury, NY American Institute of Physics 01.10.1986
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
High-field and nonlinear effects
Physics
Gallium Arsenides
Monte Carlo method
Electric field
Electrical conductivity
Semiconductor materials
Non uniform field
Theoretical study
Impact ionization
Mathematical modelling
Inorganic compound
Online AccessGet full text
ISSN0021-8979
1089-7550
DOI10.1063/1.337135

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Abstract A Monte Carlo simulation code has been developed to study the electron impact ionization in GaAs subject to nonuniform electric fields. Results are presented for the spatial evolution of the ionization rate and the average electron energy through a p+-n junction or Schottky barrier. We show that the dead space is significantly longer than estimated by simple ballistic models. For field variations typical for p+-n junctions or Schottky barriers, the results for the region after the dead space agree closely with steady-state calculations. Appropriate definition of the impact ionization rate in transient problems is discussed along with the Keldysh model.
AbstractList A Monte Carlo simulation code has been developed to study the electron impact ionization in GaAs subject to nonuniform electric fields. Results are presented for the spatial evolution of the ionization rate and the average electron energy through a p+-n junction or Schottky barrier. We show that the dead space is significantly longer than estimated by simple ballistic models. For field variations typical for p+-n junctions or Schottky barriers, the results for the region after the dead space agree closely with steady-state calculations. Appropriate definition of the impact ionization rate in transient problems is discussed along with the Keldysh model.
Author Hess, K.
Kim, K.
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Issue 7
Keywords Gallium Arsenides
Monte Carlo method
Electric field
Electrical conductivity
Semiconductor materials
Non uniform field
Theoretical study
Impact ionization
Mathematical modelling
Inorganic compound
Language English
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PublicationTitle Journal of applied physics
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SubjectTerms Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
High-field and nonlinear effects
Physics
Title Simulations of electron impact ionization rate in GaAs in nonuniform electric fields
Volume 60
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