Structural characterization of polycrystalline thin films by X-ray diffraction techniques
X-ray diffraction (XRD) techniques are powerful, non-destructive characterization tool with minimal sample preparation. XRD provides the first information about the materials phases, crystalline structure, average crystallite size, micro and macro strain, orientation parameter, texture coefficient,...
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Published in | Journal of materials science. Materials in electronics Vol. 32; no. 2; pp. 1341 - 1368 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
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New York
Springer US
01.01.2021
Springer Nature B.V |
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Abstract | X-ray diffraction (XRD) techniques are powerful, non-destructive characterization tool with minimal sample preparation. XRD provides the first information about the materials phases, crystalline structure, average crystallite size, micro and macro strain, orientation parameter, texture coefficient, degree of crystallinity, crystal defects etc. XRD analysis provides information about the bulk, polycrystalline thin films, and multilayer structures, which is very important in various scientific and material engineering fields. This review discusses the diffraction related phenomena/principles such as powder X-ray diffraction, and thin-film/grazing incidence X-ray diffraction (GIXRD) comprehensively for thin film samples which are used frequently in various branches of science and technology. The review also covers few case studies on polycrystalline thin-film samples related to phase analysis, preferred orientation parameter (texture coefficient) analysis, stress evaluation in thin films and multilayer, multiphase content identification, bifurcation of multiphase on multilayer samples, depth profiling in thin-film/ multilayer structures, the impact of doping effect on structural properties of thin films etc., comprehensively using GIXRD/XRD. |
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AbstractList | X-ray diffraction (XRD) techniques are powerful, non-destructive characterization tool with minimal sample preparation. XRD provides the first information about the materials phases, crystalline structure, average crystallite size, micro and macro strain, orientation parameter, texture coefficient, degree of crystallinity, crystal defects etc. XRD analysis provides information about the bulk, polycrystalline thin films, and multilayer structures, which is very important in various scientific and material engineering fields. This review discusses the diffraction related phenomena/principles such as powder X-ray diffraction, and thin-film/grazing incidence X-ray diffraction (GIXRD) comprehensively for thin film samples which are used frequently in various branches of science and technology. The review also covers few case studies on polycrystalline thin-film samples related to phase analysis, preferred orientation parameter (texture coefficient) analysis, stress evaluation in thin films and multilayer, multiphase content identification, bifurcation of multiphase on multilayer samples, depth profiling in thin-film/ multilayer structures, the impact of doping effect on structural properties of thin films etc., comprehensively using GIXRD/XRD. |
Author | Pandey, Akhilesh Dutta, Shankar Dixit, Ambesh Dalal, Sandeep |
Author_xml | – sequence: 1 givenname: Akhilesh orcidid: 0000-0001-7297-8823 surname: Pandey fullname: Pandey, Akhilesh email: akhilesh.physics@gmail.com organization: Solid-State Physics Laboratory, DRDO – sequence: 2 givenname: Sandeep surname: Dalal fullname: Dalal, Sandeep organization: Solid-State Physics Laboratory, DRDO – sequence: 3 givenname: Shankar surname: Dutta fullname: Dutta, Shankar organization: Solid-State Physics Laboratory, DRDO – sequence: 4 givenname: Ambesh surname: Dixit fullname: Dixit, Ambesh organization: Department of Physics, Indian Institute of Technology |
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Cites_doi | 10.1002/andp.201200724 10.1016/j.mssp.2019.104833 10.1016/j.mseb.2017.08.017 10.1142/p289 10.1007/978-1-4757-2519-3 10.1016/j.surfcoat.2004.10.075 10.1016/0001-6160(53)90006-6 10.1107/S0021889805042779 10.1063/1.4828874 10.5829/idosi.ije.2014.27.05b.13 10.4236/csta.2012.13007 10.7567/1347-4065/ab079e 10.1007/s11664-017-5924-8 10.1107/S0108767305004496 10.1016/j.apsusc.2012.06.086 10.1080/10408347.2014.949616 10.1107/S0021889878012844 10.1016/j.materresbull.2017.07.046 10.1201/9781482274004 10.1016/j.jmst.2014.11.009 10.1016/j.tsf.2005.05.008 10.5402/2012/852905 10.1143/JPSJ.26.1239 10.1088/0034-4885/72/3/036502 10.1063/1.5032964 10.1016/j.sna.2006.03.001 10.1016/j.matchemphys.2018.05.073 10.1111/j.1151-2916.1962.tb11114.x 10.1021/am507397z 10.1186/2251-7235-6-6 10.3390/cryst6080087 10.1016/j.mser.2004.07.001 10.1007/s10853-011-6140-1 10.1007/s00339-016-0143-3 10.1002/3527607595 10.1007/s00170-019-04508-1 10.1116/1.4772664 10.1098/rspa.1913.0040 10.1107/S0365110X60001941 10.1107/S0365110X67000234 10.1103/PhysRevB.53.16310 10.1016/S0040-6090(03)00911-8 10.1023/A:1008935709977 10.1038/s41699-020-0140-4 10.1179/026708301101509980 10.5185/amlett.2016.6364 10.1016/j.jallcom.2016.11.284 10.1088/0960-1317/10/2/307 10.1007/978-1-4899-0148-4 10.1016/j.jcrysgro.2014.05.004 10.1107/S0021889869006558 10.4236/ojsta.2013.21003 10.1016/j.jallcom.2017.11.377 10.1021/acsaelm.9b00793 10.1098/rspa.1909.0021 10.1007/978-1-4613-9570-6 10.1063/1.325845 10.1007/BF00557189 10.1038/srep16318 10.1080/14786440108520972 10.1007/978-3-642-79678-4 10.1016/j.scriptamat.2012.07.027 10.1063/1.4921757 10.1002/adma.200802849 10.1016/j.snb.2005.03.014 10.1201/9781420007701 10.1016/j.jallcom.2011.02.008 10.1063/1.1699713 10.1557/mrs.2017.86 10.1063/1.2393004.1 10.1107/S0021889800017908 10.1016/S0040-6090(02)00680-6 10.1007/s00542-019-04334-1 10.1063/1.4812733 10.1088/0957-4484/20/8/085609 10.1016/j.tsf.2018.09.016 10.1016/j.surfcoat.2010.07.108 10.1016/j.ceramint.2017.06.050 10.1016/j.mssp.2016.05.004 10.1016/j.ceramint.2016.02.054 10.1016/j.sab.2007.02.012 10.1016/j.mssp.2012.06.013 10.1063/1.4759123 10.1023/B:PHAM.0000012163.89163.f8 10.1016/j.solmat.2008.10.009 |
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References | TjongSCChenHNanocrystalline materials and coatingsMater. Sci. Eng. R2004451881:CAS:528:DC%2BD2cXmvVGkt78%3D10.1016/j.mser.2004.07.001 NauerMErnstKKautekWNeumann-SpallartMDepth profile characterization of electrodeposited multi-thin-film structures by low angle of incidence X-ray diffractometryThin Solid Films200548986931:CAS:528:DC%2BD2MXms1Oms7o%3D10.1016/j.tsf.2005.05.008 BouroushianMKosanovicTCharacterization of thin films by low incidence X-ray diffractionCryst. Struct. Theory Appl.20120135391:CAS:528:DC%2BC2cXmvVGquro%3D10.4236/csta.2012.13007 AzaroffLVElements of X-ray Crystallography1968New YorkMcGraw-Hill TakagiSJ. Phys. Soc. Jpn.19692612391:CAS:528:DyaF1MXktlCjtbo%3D10.1143/JPSJ.26.1239 KittelCIntroduction to Solid State Physics19765ChichesterWiley M. Birkholz, Thin films analysis by X-Ray scattering, Wiley-VCH GmbH & Co. 2006. HolecDMayrhoferPHSurface energies of AlN allotropes from first principlesScripta Mater.2012677607621:CAS:528:DC%2BC38Xht1aksbzP10.1016/j.scriptamat.2012.07.027 MadauMJFundamental of Microfabrication-The Science of Miniaturization2002Boca RatonCRC Press10.1201/9781482274004 BauerGOptical Characterization of Epitaxial Semiconductor Layers1996BerlinSpringer10.1007/978-3-642-79678-4 WangYTangWZhangLCrystalline size effects on texture coefficient, electrical and optical properties of sputter-deposited Ga-doped ZnO thin filmsJ. Mater. Sci. Technol.20153121751811:CAS:528:DC%2BC1cXitlCksLrM10.1016/j.jmst.2014.11.009 AgrawalMJainASridharaRaoDVPandeyAGoyalAKumarALambaSMehtaBRMuraleedharanKMuralidharanRNanoharvesting of GaN nanowires on Si (211) substrates by plasma-assisted molecular beam epitaxyJ. Cryst. Growth.201440237411:CAS:528:DC%2BC2cXht1akt73J10.1016/j.jcrysgro.2014.05.004 CullityBDStockSRElements of X-ray Diffraction20013Englewood CliffsPrentice-Hall P. F. Fewster, X-Ray Scattering from Semiconductors, Second Edition Imperial College Press, (2003). YuSChenRZhangGChengJMengZFerroelectric enhancement in heterostructured ZnO/BiFeO3-PbTiO3 filmAppl. Phys. Lett.2006893610.1063/1.2393004.1 KumarMKumarAAbhyankarACInfluence of texture coefficient on surface morphology and sensing properties of W-doped nanocrystalline tin oxide thin filmsACS Appl. Mater. Interfaces.20157357135801:CAS:528:DC%2BC2MXhtFyktLw%3D10.1021/am507397z ColombiPZanolaPBontempiEDeperoLEModeling of glancing incidence X-ray for depth profiling of thin layersSpectrochim. Acta Part B2007625545571:CAS:528:DC%2BD2sXovFWjt78%3D10.1016/j.sab.2007.02.012 CatalanGScottJFPhysics and applications of bismuth ferriteAdv. Mater.200921246324851:CAS:528:DC%2BD1MXnvV2msb8%3D10.1002/adma.200802849 WangBYanJCuiHDuSPreparation and characterization of nano TiO2/micron Cr2O3 composite particlesJ. Alloys Compd.2011509501750191:CAS:528:DC%2BC3MXjtFWgsrk%3D10.1016/j.jallcom.2011.02.008 GianniniCLadisaMAltamuraDSiliqiDSibillanoTDe CaroLX-ray diffraction: a powerful technique for the multiple-length-scale structural analysis of nanomaterialsCrystals2016101221:CAS:528:DC%2BC28XhslWgt7zO10.3390/cryst6080087 WilliamsDBCarterCBTransmission Electron Microscopy: A Textbook for Materials Science1996New YorkSpringer10.1007/978-1-4757-2519-3 S. K. Gupta, M.G. Gartley, International Centre for Diffraction Data (ICDD), the Denver X-ray Conference (DXC) 52 (1999). PANalytical X-Pert Pro -MRD HRXRD manual WarrenBEAverbachBLJ. Appl. Phys.1950215951:CAS:528:DyaG3cXkt12kuw%3D%3D10.1063/1.1699713 KaufmannCAÃCaballeroRUnoldTHesseRKlenkRSchorrSNichterwitzMSchockHDepth profiling of Cu (In, Ga)Se2 thin films grown at low temperaturesSolar Energy Mater Solar Cell2009938598631:CAS:528:DC%2BD1MXls12nu7w%3D10.1016/j.solmat.2008.10.009 StoneyGGThe tension of metallic films deposited by electrolysisProc. R. Soc. Lond.1909A8217210.1098/rspa.1909.0021 ShanJDexheimerSLTime-resolved terahertz studies of conductivity processes in novel electronic materialsTerahertz Spectrosc. Princ. Appl.201710.1201/9781420007701 NoyanCCohenJBResidual Stress, Measurement by Diffraction and Interpretation1987New YorkSpringer-Verlag10.1007/978-1-4613-9570-6 BenmoreCJA review of high-energy X-ray diffraction from glasses and liquidsIntl. Sch. Res. Notices201210.5402/2012/852905 WilliamsonGKHallWHX-ray line broadening from filed aluminium and wolframActa Metall.1953122311:CAS:528:DyaG3sXitFCquw%3D%3D10.1016/0001-6160(53)90006-6 PandeyADuttaSKumarARamanRKapoorAKMuralidhranRStructural and optical properties of bulk MoS2 for 2D layer growthAdv. Mater. Lett.201677777821:CAS:528:DC%2BC28XhvF2ltbrN10.5185/amlett.2016.6364 MoteVPurushothamYDoleBWilliamson-Hall analysis in estimation of lattice strain in nanometer-sized ZnO particlesJ. Theor. Appl. Phys.20126610.1186/2251-7235-6-6 BraggWHBraggWLThe reflexion of X-rays by crystalsProc. R. Soc. Lond. A.1913886054284381:CAS:528:DyaC3sXit1ykug%3D%3D10.1098/rspa.1913.0040 SzeSMSemiconductor Devices: Physics and Technology20082ChichesterWiley India Pvt WithersPJBhadeshiaHKDHResidual stress. Part 1: measurement techniquesMater. Sci. Technol.2001173553651:CAS:528:DC%2BD3MXjtF2it78%3D10.1179/026708301101509980 GibaudAHazraSX-ray reflectivity and diffuse scatteringCurr. Sci.20007812146714771:CAS:528:DC%2BD3cXltlKktr8%3D RietveldHMA profile refinement method for nuclear and magnetic structureJ. Appl. Cryst.1969265711:CAS:528:DyaF1MXksVeisbk%3D10.1107/S0021889869006558 AbabnehAAlsumadyMSeidelHManzanequeTHernando-GarcíaJSanchez-RojasJLBittnerASchmidUc-axis orientation and piezoelectric coefficients of AlN thin films sputter-deposited on titanium bottom electrodesAppl. Surf. Sci.201225959651:CAS:528:DC%2BC38XhtVOqt7fL10.1016/j.apsusc.2012.06.086 OrlhacXFilletCDeniardPDulacAMBrecRDetermination of the crystallized fractions of a largely amorphous multiphase material by the Rietveld methodJ. Appl. Cryst.2001341141181:CAS:528:DC%2BD3MXit1yhsLs%3D10.1107/S0021889800017908 PandeyAPrakashRDuttaSDalalSKumarAKapoorAKKaurDGrowth and morphological evolution of c-axis oriented AlN films on Si (100) substrates by DC sputtering techniqueAIP Conf. Proc.20181953151:CAS:528:DC%2BC1cXhtValtLjF10.1063/1.5032964 DuttaSPandeyAYadavIThakurOPKumarAPalRChatterjeeRGrowth and electrical properties of spin coated ultrathin ZrO2 films on siliconJ. Appl. Phys.20131140141051:CAS:528:DC%2BC3sXhtVaqs7zM10.1063/1.4812733 KaviyarasuKManikandanEKennedyJJayachandranMLadchumananandasiivamRDe-GomesUUMaazaMSynthesis and characterization studies of NiO nano-rods for enhancing solar cell efficiency using photon up conversion materialsCeram. Int.201642838583941:CAS:528:DC%2BC28XisFKgtLs%3D10.1016/j.ceramint.2016.02.054 ScherrerPGöttinger Nachrichten Gesell.1918298 KumariCPandeyADixitAZn interstitial defects and their contribution as efficient light blue emitters in Zn rich ZnO thin filmsJ. Alloy Compd.2018735231823231:CAS:528:DC%2BC2sXhvFCjtLzK10.1016/j.jallcom.2017.11.377 BowenDKTannerBKHigh-Resolution X-Ray Diffractometry and Topography2005Boca RatonCRC Press CaliendoCImperatonPCianciEStructural, morphological and acoustic properties of AlN thick films sputtered on Si(001) and Si(111) substrates at low temperatureThin Solid Films200344132371:CAS:528:DC%2BD3sXms1Clsrk%3D10.1016/S0040-6090(03)00911-8 IlHongJBaeJWangZLSnyderRLRoom-temperature, texture-controlled growth of ZnO thin films and their application for growing aligned ZnO nanowire arraysNanotechnology.2009200856091:CAS:528:DC%2BD1MXksFegt7g%3D10.1088/0957-4484/20/8/085609 JainSKKumarRRAggarwalNVashishthaPGoswamiLKuriakoseSPandeyABhaskaranMWaliaSGuptaGCurrent transport and band alignment study of MoS2/GaN and MoS2/AlGaN heterointerfaces for broadband photodetection applicationACS Appl. Electron. Mater.202027107181:CAS:528:DC%2BB3cXktlOit7Y%3D10.1021/acsaelm.9b00793 MehdikhaniBBorhaniGHBakhshiSRBaharvandiHRSynthesis of tantalum carbide/boride nanocomposite powders by mechanochemical methodInt. J. Eng. Trans. B Appl.2014277697741:CAS:528:DC%2BC2MXjtl2nsbs%3D10.5829/idosi.ije.2014.27.05b.13 OhlbergSMStricklerDWDetermination of percent crystallinity of partly devitrified glass by X-ray diffractionJ. Am. Ceram. Soc.1962451701711:CAS:528:DyaF38XntFyntg%3D%3D10.1111/j.1151-2916.1962.tb11114.x OzturkMKArslanEKarsIOzcelikSOzbayEStrain analysis of the GaN epitaxial layers grown on nitridated Si (111) substrate by metal organic chemical vapor depositionMater. Sci. Semicond. Process20131683881:CAS:528:DC%2BC38XhtVOgt73M10.1016/j.mssp.2012.06.013 MednikarovBSpasovGBabevaTAluminum nitride layers prepared by DC/RF magnetron sputteringJ. Optoelectron. Adv. Mater.20057142114271:CAS:528:DC%2BD2MXpsFWms7c%3D SharmaGNDuttaSPandeyASinghSKChatterjeeRMicrostructure and improved electrical properties of Ti-substituted BiFeO3 thin filmsMater. Res. Bull.2017952232281:CAS:528:DC%2BC2sXht12lsrnF10.1016/j.materresbull.2017.07.046 SuryanarayanaCX-ray Diffraction: A Practical Approach1998M. Grant NortonSpringer10.1007/978-1-4899-0148-4 CongXLiuXLLinMLTanPHApplication of Raman spectroscopy to probe fundamental properties of two-dimensional materialsNPJ 2D Mater. Appl.202041121:CAS:528:DC%2BB3cXhtVahs7jP10.1038/s41699-020-0140-4 ChowdhurySBiswasDImpact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on siliconAIP Adv.201550571491:CAS:528:DC%2BC2MXovFOisb0%3D10.1063/1.4921757 TaupinDBull. Soc. Fr. Mineral. Cristallogr.1964874691:CAS:528:DyaF2MXntVGqtw%3D%3D RietveldHMLine profiles of neutron powder diffraction peaks for structure refinementActa Crystallogr.1967221511:CAS:528:DyaF2sXjt1Kiug%3D%3D10.1107/S0365110X67000234 DuttaSPandeyAThakurOPPalRChatterjeeREstimation of residual stress in Pb(Zr0.52Ti0.48)O3/BiFeO3 multilayers deposited on siliconJ. Appl. Phys.20131141741031:CAS:528:DC%2BC3sXhslWmsLvL10.1063/1.4828874 MuraltPFerroelectric thin films for micro-sensors and actuators: a reviewJ. Micromech. Microeng.2000101361461:CAS:528:DC%2BD3cXksleqtL0%3D10.1088/0960-1317/10/2/307 LangfordJIWilsonAJCSeherrer after sixty years: a survey and some new results in the determination of crystallite sizeJ. Appl. Cryst.1978111021131:CAS:528:DyaE1cXh WC Marra (4998_CR54) 1979; 50 PF Fewster (4998_CR33) 1999; 10 DB Williams (4998_CR59) 1996 C Kittel (4998_CR10) 1976 PJ Withers (4998_CR41) 2001; 17 M Nauer (4998_CR88) 2005; 489 P Muralt (4998_CR3) 2000; 10 X Cong (4998_CR60) 2020; 4 JN Reddy (4998_CR47) 1997 4998_CR40 FA Vittoria (4998_CR5) 2015; 5 S Dutta (4998_CR77) 2013; 114 S Dutta (4998_CR74) 2012; 112 4998_CR46 A Ababneh (4998_CR65) 2012; 259 JI Langford (4998_CR36) 1978; 11 S Chowdhury (4998_CR52) 2015; 5 Y Xi (4998_CR50) 2017; 43 G Bauer (4998_CR21) 1996 CH Ma (4998_CR49) 2002; 418 B Wang (4998_CR97) 2011; 509 NA Spaldin (4998_CR85) 2010; 63 SK Jangir (4998_CR92) 2017; 225 Y Huang (4998_CR96) 2013; 31 C Suryanarayana (4998_CR8) 1998 X Orlhac (4998_CR29) 2001; 34 SK Jain (4998_CR94) 2020; 2 J IlHong (4998_CR93) 2009; 20 J Shan (4998_CR103) 2017 M Ohring (4998_CR1) 1992 LV Azaroff (4998_CR9) 1968 AS Goikhman (4998_CR31) 1992; 24 K Tonisch (4998_CR64) 2006; 132 N Khemiri (4998_CR101) 2013; 02 P Scherrer (4998_CR35) 1918; 2 M Bouroushian (4998_CR89) 2012; 01 C Giannini (4998_CR11) 2016; 10 S Yu (4998_CR73) 2006; 89 K Kim (4998_CR72) 1996; 53 S Dutta (4998_CR99) 2017; 696 A Pandey (4998_CR66) 2018; 1953 M Agrawal (4998_CR91) 2014; 402 J Wieben (4998_CR102) 2019; 58 GN Sharma (4998_CR82) 2018; 216 B Mehdikhani (4998_CR100) 2014; 27 WL Bond (4998_CR32) 1960; 13 A Pandey (4998_CR67) 2016; 52 A Gibaud (4998_CR6) 2000; 78 N Gupta (4998_CR68) 2019; 25 CJ Benmore (4998_CR12) 2012 Y Wang (4998_CR44) 2015; 31 CAÃ Kaufmann (4998_CR57) 2009; 93 HM Rietveld (4998_CR28) 1969; 2 C Noyan (4998_CR45) 1987 P Colombi (4998_CR55) 2006; 10 GN Sharma (4998_CR83) 2017; 95 SC Tjong (4998_CR2) 2004; 45 MA Moram (4998_CR14) 2009; 72 M Kumar (4998_CR43) 2015; 7 ES Ameh (4998_CR15) 2019; 105 P Colombi (4998_CR56) 2007; 62 JX Zhang (4998_CR70) 2005; 198 GK Williamson (4998_CR37) 1953; 1 MK Ozturk (4998_CR51) 2013; 16 A Pandey (4998_CR95) 2016; 7 WH Bragg (4998_CR19) 1913; 88 S Debnath (4998_CR87) 2004; 21 C Caliendo (4998_CR63) 2003; 441 D Holec (4998_CR69) 2012; 67 A Pandey (4998_CR53) 2020; 107 SM Sze (4998_CR4) 2008 D De-Faoite (4998_CR62) 2012; 47 A Pandey (4998_CR81) 2016; 122 C Kumari (4998_CR90) 2018; 735 R Ruh (4998_CR71) 1985; 64 K Kaviyarasu (4998_CR86) 2016; 42 D Taupin (4998_CR23) 1964; 87 BD Cullity (4998_CR7) 2001 GG Stoney (4998_CR76) 1909; A82 AA Bunaciu (4998_CR13) 2015; 45 A Pandey (4998_CR79) 2018; 47 S Takagi (4998_CR24) 1969; 26 B Mednikarov (4998_CR61) 2005; 7 BE Warren (4998_CR38) 1950; 21 A Pandey (4998_CR80) 2018; 666 4998_CR26 4998_CR25 4998_CR22 GB Harris (4998_CR42) 1952; 43 Q Luo (4998_CR48) 2010; 205 T Jantson (4998_CR98) 2005; 109 4998_CR17 4998_CR18 DK Bowen (4998_CR20) 2005 M Fatemi (4998_CR34) 2005; 61 S Dutta (4998_CR75) 2013; 114 X Jin (4998_CR58) 2013 HM Rietveld (4998_CR27) 1967; 22 4998_CR16 SM Ohlberg (4998_CR30) 1962; 45 MJ Madau (4998_CR78) 2002 V Mote (4998_CR39) 2012; 6 G Catalan (4998_CR84) 2009; 21 |
References_xml | – reference: TakagiSJ. Phys. Soc. Jpn.19692612391:CAS:528:DyaF1MXktlCjtbo%3D10.1143/JPSJ.26.1239 – reference: PandeyADuttaSPrakashRRamanRKapoorAKKaurDGrowth and comparison of residual stress of AlN films on silicon (100), (110) and (111) substratesJ. Electron. Mater.201847140514131:CAS:528:DC%2BC2sXhvVCjtrzJ10.1007/s11664-017-5924-8 – reference: BouroushianMKosanovicTCharacterization of thin films by low incidence X-ray diffractionCryst. Struct. Theory Appl.20120135391:CAS:528:DC%2BC2cXmvVGquro%3D10.4236/csta.2012.13007 – reference: BunaciuAAGabrielaUdriştioiuEAboul-EneinHYX-ray diffraction: instrumentation and applicationsCrit. Rev. Anal. Chem.2015452892991:CAS:528:DC%2BC2MXovVCntbY%3D10.1080/10408347.2014.949616 – reference: DuttaSPandeyALeeladharJainKKGrowth and characterization of ultrathin TiO2–Cr2O3 nano-composite filmsJ. Alloy Compd.20176963763811:CAS:528:DC%2BC28XhvFCntb3I10.1016/j.jallcom.2016.11.284 – reference: M. Birkholz, Thin films analysis by X-Ray scattering, Wiley-VCH GmbH & Co. 2006. – reference: WarrenBEAverbachBLJ. Appl. Phys.1950215951:CAS:528:DyaG3cXkt12kuw%3D%3D10.1063/1.1699713 – reference: MehdikhaniBBorhaniGHBakhshiSRBaharvandiHRSynthesis of tantalum carbide/boride nanocomposite powders by mechanochemical methodInt. J. Eng. Trans. B Appl.2014277697741:CAS:528:DC%2BC2MXjtl2nsbs%3D10.5829/idosi.ije.2014.27.05b.13 – reference: BenmoreCJA review of high-energy X-ray diffraction from glasses and liquidsIntl. Sch. Res. Notices201210.5402/2012/852905 – reference: MoteVPurushothamYDoleBWilliamson-Hall analysis in estimation of lattice strain in nanometer-sized ZnO particlesJ. Theor. Appl. Phys.20126610.1186/2251-7235-6-6 – reference: HarrisGBQuantitative measurement of preferred orientation in rolled uranium barsPhil. Mag. Series19524333610.1080/14786440108520972 – reference: PandeyARamanRDalalSKaurDKapoorAKStructural and optical characteristics investigations in oxygen ion implanted GaN epitaxial layersMater. Sci. Semicond. Process.20201071048331:CAS:528:DC%2BC1MXitFOitbnJ10.1016/j.mssp.2019.104833 – reference: MuraltPFerroelectric thin films for micro-sensors and actuators: a reviewJ. Micromech. Microeng.2000101361461:CAS:528:DC%2BD3cXksleqtL0%3D10.1088/0960-1317/10/2/307 – reference: SpaldinNACheongSWRameshRMultiferroics: past, present, and futurePhys. Today2010633810.1557/mrs.2017.86 – reference: LangfordJIWilsonAJCSeherrer after sixty years: a survey and some new results in the determination of crystallite sizeJ. Appl. Cryst.1978111021131:CAS:528:DyaE1cXhvVSlsLo%3D10.1107/S0021889878012844 – reference: DuttaSPandeyAYadavIThakurOPLaishramRPalRChatterjeeRImproved electrical properties of PbZrTiO3/BiFeO3 multilayers with ZnO buffer layerJ. Appl. Phys.20121120841011:CAS:528:DC%2BC38XhsFamu7nP10.1063/1.4759123 – reference: ReddyJNMechanics of Laminated Composite Plates1997Boca RatonCRC Press – reference: KimKLambrechtWRLSegallBElastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InNPhys. Rev. B199653163101:CAS:528:DyaK28XktVChsLc%3D10.1103/PhysRevB.53.16310 – reference: TjongSCChenHNanocrystalline materials and coatingsMater. Sci. Eng. R2004451881:CAS:528:DC%2BD2cXmvVGkt78%3D10.1016/j.mser.2004.07.001 – reference: JinXNeutron Diffraction Principles, Instrumentation and Application2013New YorkNova Science Publishers, Inc. – reference: SharmaGNDuttaSPandeyASinghSKChatterjeeRInfluence of nickel doping on structural, morphological and mechanical properties of BiFeO3 thin filmsMater. Chem. Phys.201821647501:CAS:528:DC%2BC1cXhtVOisbzE10.1016/j.matchemphys.2018.05.073 – reference: VittoriaFAEndrizziMDiemozPCZamirAWagnerUHRauCRobinsonIKOlivoAX-ray absorption, phase and dark-field tomography through a beam tracking approachSci. Rep.20155163181:CAS:528:DC%2BC2MXhslyhu7zI10.1038/srep16318 – reference: ScherrerPGöttinger Nachrichten Gesell.1918298 – reference: WangBYanJCuiHDuSPreparation and characterization of nano TiO2/micron Cr2O3 composite particlesJ. Alloys Compd.2011509501750191:CAS:528:DC%2BC3MXjtFWgsrk%3D10.1016/j.jallcom.2011.02.008 – reference: AgrawalMJainASridharaRaoDVPandeyAGoyalAKumarALambaSMehtaBRMuraleedharanKMuralidharanRNanoharvesting of GaN nanowires on Si (211) substrates by plasma-assisted molecular beam epitaxyJ. Cryst. Growth.201440237411:CAS:528:DC%2BC2cXht1akt73J10.1016/j.jcrysgro.2014.05.004 – reference: PandeyAKaushikJDuttaSKapoorAKKaurDElectrical and structural characteristics of sputtered c-oriented AlN thin films on Si (100) and Si (110) substratesThin Solid Films20186661431491:CAS:528:DC%2BC1cXhvVSqs7vE10.1016/j.tsf.2018.09.016 – reference: R Novelize, Squire's Fundamentals of Radiology. Harvard University Press. 5th edition. ISBN 0-674-83339-2, p. 1 (1997). – reference: WilliamsDBCarterCBTransmission Electron Microscopy: A Textbook for Materials Science1996New YorkSpringer10.1007/978-1-4757-2519-3 – reference: OhringMThe Materials Science of Thin Film19922BostonAcademic Press – reference: RietveldHMA profile refinement method for nuclear and magnetic structureJ. Appl. Cryst.1969265711:CAS:528:DyaF1MXksVeisbk%3D10.1107/S0021889869006558 – reference: ColombiPZanolaPBontempiEDeperoLEModeling of glancing incidence X-ray for depth profiling of thin layersSpectrochim. Acta Part B2007625545571:CAS:528:DC%2BD2sXovFWjt78%3D10.1016/j.sab.2007.02.012 – reference: PANalytical X-Pert Pro -MRD HRXRD manual – reference: PandeyAYadavBSRaoDVSKaurDKapoorAKDislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etchingAppl. Phys. A20161226141:CAS:528:DC%2BC28XosFWgsr8%3D10.1007/s00339-016-0143-3 – reference: A. K. Singh (ed.), Advanced X-ray Techniques in Research and Industries, Ios Pr Inc, (2005). ISBN 1586035371. – reference: AmehESA review of basic crystallography and X-ray diffraction applicationsInt. J. Adv. Manuf. Technol.20191053289330210.1007/s00170-019-04508-1 – reference: KumarMKumarAAbhyankarACInfluence of texture coefficient on surface morphology and sensing properties of W-doped nanocrystalline tin oxide thin filmsACS Appl. Mater. Interfaces.20157357135801:CAS:528:DC%2BC2MXhtFyktLw%3D10.1021/am507397z – reference: CaliendoCImperatonPCianciEStructural, morphological and acoustic properties of AlN thick films sputtered on Si(001) and Si(111) substrates at low temperatureThin Solid Films200344132371:CAS:528:DC%2BD3sXms1Clsrk%3D10.1016/S0040-6090(03)00911-8 – reference: JantsonTAvarmaaTMandarHUustareTJaanisoRNanocrystalline Cr2O3–TiO2 thin films by pulsed laser depositionSens. Actuators B200510924311:CAS:528:DC%2BD2MXmvVWnurw%3D10.1016/j.snb.2005.03.014 – reference: MoramMAVickersMEX-ray diffraction of III-nitridesRep. Prog. Phys.20097203650210.1088/0034-4885/72/3/036502 – reference: MednikarovBSpasovGBabevaTAluminum nitride layers prepared by DC/RF magnetron sputteringJ. Optoelectron. Adv. Mater.20057142114271:CAS:528:DC%2BD2MXpsFWms7c%3D – reference: WangYTangWZhangLCrystalline size effects on texture coefficient, electrical and optical properties of sputter-deposited Ga-doped ZnO thin filmsJ. Mater. Sci. Technol.20153121751811:CAS:528:DC%2BC1cXitlCksLrM10.1016/j.jmst.2014.11.009 – reference: SuryanarayanaCX-ray Diffraction: A Practical Approach1998M. Grant NortonSpringer10.1007/978-1-4899-0148-4 – reference: S. K. Gupta, M.G. Gartley, International Centre for Diffraction Data (ICDD), the Denver X-ray Conference (DXC) 52 (1999). – reference: BowenDKTannerBKHigh-Resolution X-Ray Diffractometry and Topography2005Boca RatonCRC Press – reference: ChowdhurySBiswasDImpact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on siliconAIP Adv.201550571491:CAS:528:DC%2BC2MXovFOisb0%3D10.1063/1.4921757 – reference: WiebenJBeckmannCYacoubHVescanAKalischHDevelopment of a III-nitride electro-optical modulator for UV–VisJpn. J. Appl. Phys.2019587121:CAS:528:DC%2BC1MXhvVGnu7rI10.7567/1347-4065/ab079e – reference: KaviyarasuKManikandanEKennedyJJayachandranMLadchumananandasiivamRDe-GomesUUMaazaMSynthesis and characterization studies of NiO nano-rods for enhancing solar cell efficiency using photon up conversion materialsCeram. Int.201642838583941:CAS:528:DC%2BC28XisFKgtLs%3D10.1016/j.ceramint.2016.02.054 – reference: TaupinDBull. Soc. Fr. Mineral. Cristallogr.1964874691:CAS:528:DyaF2MXntVGqtw%3D%3D – reference: FatemiMAbsolute measurement of lattice parameter in single crystals and epitaxic layers on a double-crystal X-ray diffractometerActa Crystallogr. A2005613013131:CAS:528:DC%2BD2MXjsVGrsbw%3D10.1107/S0108767305004496 – reference: CongXLiuXLLinMLTanPHApplication of Raman spectroscopy to probe fundamental properties of two-dimensional materialsNPJ 2D Mater. Appl.202041121:CAS:528:DC%2BB3cXhtVahs7jP10.1038/s41699-020-0140-4 – reference: RietveldHMLine profiles of neutron powder diffraction peaks for structure refinementActa Crystallogr.1967221511:CAS:528:DyaF2sXjt1Kiug%3D%3D10.1107/S0365110X67000234 – reference: KhemiriNAbdelkaderDKhalfallahBKanzariMSynthesis and characterization of CuIn2n+1S3n+2 (with n = 0, 1, 2, 3 and 5) powdersJ. Synth. Theory Appl.20130233371:CAS:528:DC%2BC3sXhtVGjtb3P10.4236/ojsta.2013.21003 – reference: M. Eckert, Ann. Phys. (Berlin), 524 (5), A83–A85 (2012) https://doi.org/10.1002/andp.201200724. – reference: GianniniCLadisaMAltamuraDSiliqiDSibillanoTDe CaroLX-ray diffraction: a powerful technique for the multiple-length-scale structural analysis of nanomaterialsCrystals2016101221:CAS:528:DC%2BC28XhslWgt7zO10.3390/cryst6080087 – reference: De-FaoiteDBrowneDJChang-DıazFRStantonKTA review of the processing, composition, and temperature-dependent mechanical and thermal properties of dielectric technical ceramicsJ. Mater. Sci.201247421142351:CAS:528:DC%2BC3MXhsFyns7jL10.1007/s10853-011-6140-1 – reference: IlHongJBaeJWangZLSnyderRLRoom-temperature, texture-controlled growth of ZnO thin films and their application for growing aligned ZnO nanowire arraysNanotechnology.2009200856091:CAS:528:DC%2BD1MXksFegt7g%3D10.1088/0957-4484/20/8/085609 – reference: XiYGaoKPangXYangHXiongXLiHVolinskyAAFilm thickness effect on texture and residual stress sign transition in sputtered TiN thin filmsCeram. Int.20174311992119971:CAS:528:DC%2BC2sXhtFyhsL7I10.1016/j.ceramint.2017.06.050 – reference: GuptaNPandeyAVanjariSRKDuttaSInfluence of residual stress on performance of AlN thin film based piezoelectric MEMS accelerometer structureMicrosyst. Technol.201925395939671:CAS:528:DC%2BC1MXns1CltLw%3D10.1007/s00542-019-04334-1 – reference: ZhangJXChengHChenYZUddinAYuanSGengSJZhangSGrowth of AlN films on Si (100) and Si (111) substrates by reactive magnetron sputteringSurf. Coat. Technol.200519868731:CAS:528:DC%2BD2MXltlWqtL4%3D10.1016/j.surfcoat.2004.10.075 – reference: ShanJDexheimerSLTime-resolved terahertz studies of conductivity processes in novel electronic materialsTerahertz Spectrosc. Princ. Appl.201710.1201/9781420007701 – reference: TonischKCimallaVFoersterCRomanusHAmbacherODontsovDPiezoelectric properties of polycrystalline AlN thin films for MEMS applicationSens. Actuators A20061326586631:CAS:528:DC%2BD28XhtF2htLzF10.1016/j.sna.2006.03.001 – reference: WilliamsonGKHallWHX-ray line broadening from filed aluminium and wolframActa Metall.1953122311:CAS:528:DyaG3sXitFCquw%3D%3D10.1016/0001-6160(53)90006-6 – reference: AzaroffLVElements of X-ray Crystallography1968New YorkMcGraw-Hill – reference: HuangYPandraudGSarroPMCharacterization of low temperature deposited atomic layer deposition TiO2 for MEMS applicationsJ. Vac. Sci. Technol. A.20133101A1481:CAS:528:DC%2BC38XhvFSgu73O10.1116/1.4772664 – reference: OhlbergSMStricklerDWDetermination of percent crystallinity of partly devitrified glass by X-ray diffractionJ. Am. Ceram. Soc.1962451701711:CAS:528:DyaF38XntFyntg%3D%3D10.1111/j.1151-2916.1962.tb11114.x – reference: W. Friedrich, P. Knipping, M. von Laue, Interferenz-Erscheinungen bei R€ ontgenstrahlen. Sitzungsber. Math.-Phys. Classe K€oniglich Bayerischen Akad. Wiss. M€unchen. 303–322 (1912). – reference: GibaudAHazraSX-ray reflectivity and diffuse scatteringCurr. Sci.20007812146714771:CAS:528:DC%2BD3cXltlKktr8%3D – reference: DuttaSPandeyAThakurOPPalRChatterjeeREstimation of residual stress in Pb(Zr0.52Ti0.48)O3/BiFeO3 multilayers deposited on siliconJ. Appl. Phys.20131141741031:CAS:528:DC%2BC3sXhslWmsLvL10.1063/1.4828874 – reference: BondWLPrecision lattice constant determinationActa Cryst.1960138141:CAS:528:DyaF3MXjsVU%3D10.1107/S0365110X60001941 – reference: PandeyADuttaSKumarARamanRKapoorAKMuralidhranRStructural and optical properties of bulk MoS2 for 2D layer growthAdv. Mater. Lett.201677777821:CAS:528:DC%2BC28XhvF2ltbrN10.5185/amlett.2016.6364 – reference: FewsterPFAbsolute lattice parameter measurementJ. Mater. Sci.: Mater. Electron.1999101751831:CAS:528:DyaK1MXjvFSrtbs%3D10.1023/A:1008935709977 – reference: OzturkMKArslanEKarsIOzcelikSOzbayEStrain analysis of the GaN epitaxial layers grown on nitridated Si (111) substrate by metal organic chemical vapor depositionMater. Sci. Semicond. Process20131683881:CAS:528:DC%2BC38XhtVOgt73M10.1016/j.mssp.2012.06.013 – reference: GoikhmanASIrkleiVMVavrinyukOSPirogovVIX-ray diffraction determination of the degree of crystallinity of cellulose using a computerFibre Chem.199224808510.1007/BF00557189 – reference: KumariCPandeyADixitAZn interstitial defects and their contribution as efficient light blue emitters in Zn rich ZnO thin filmsJ. Alloy Compd.2018735231823231:CAS:528:DC%2BC2sXhvFCjtLzK10.1016/j.jallcom.2017.11.377 – reference: KaufmannCAÃCaballeroRUnoldTHesseRKlenkRSchorrSNichterwitzMSchockHDepth profiling of Cu (In, Ga)Se2 thin films grown at low temperaturesSolar Energy Mater Solar Cell2009938598631:CAS:528:DC%2BD1MXls12nu7w%3D10.1016/j.solmat.2008.10.009 – reference: CullityBDStockSRElements of X-ray Diffraction20013Englewood CliffsPrentice-Hall – reference: YuSChenRZhangGChengJMengZFerroelectric enhancement in heterostructured ZnO/BiFeO3-PbTiO3 filmAppl. Phys. Lett.2006893610.1063/1.2393004.1 – reference: MadauMJFundamental of Microfabrication-The Science of Miniaturization2002Boca RatonCRC Press10.1201/9781482274004 – reference: StoneyGGThe tension of metallic films deposited by electrolysisProc. R. Soc. Lond.1909A8217210.1098/rspa.1909.0021 – reference: KittelCIntroduction to Solid State Physics19765ChichesterWiley – reference: JainSKKumarRRAggarwalNVashishthaPGoswamiLKuriakoseSPandeyABhaskaranMWaliaSGuptaGCurrent transport and band alignment study of MoS2/GaN and MoS2/AlGaN heterointerfaces for broadband photodetection applicationACS Appl. Electron. Mater.202027107181:CAS:528:DC%2BB3cXktlOit7Y%3D10.1021/acsaelm.9b00793 – reference: MarraWCEisenbergerPChoAYX-ray total-external-reflection–Bragg diffraction: a structural study of the GaAs-Al interfaceJ. Appl. Phys.19795069271:CAS:528:DyaL3MXitlaitg%3D%3D10.1063/1.325845 – reference: MaCHHuangJHChenHResidual stress measurement in textured thin film by grazing-incidence X-ray diffractionThin Solid Films200241873781:CAS:528:DC%2BD38Xot1eltrw%3D10.1016/S0040-6090(02)00680-6 – reference: RuhRZangvilABarloweJElastic properties of SiC, AIN, and their solid solutions and particulate compositesAm. Ceram. Soc. Bull.198564136813731:CAS:528:DyaL2MXlvVamsL0%3D – reference: HolecDMayrhoferPHSurface energies of AlN allotropes from first principlesScripta Mater.2012677607621:CAS:528:DC%2BC38Xht1aksbzP10.1016/j.scriptamat.2012.07.027 – reference: JangirSKMalikHKDalalSPandeyASrinivasanTMuraleedharanKMuralidharanRMishraPX-ray pole figure analysis of catalyst free InAs nanowires on Si substrateMater. Sci. Eng. B20172251081141:CAS:528:DC%2BC2sXhsVWms7fK10.1016/j.mseb.2017.08.017 – reference: PandeyAPrakashRDuttaSDalalSKumarAKapoorAKKaurDGrowth and morphological evolution of c-axis oriented AlN films on Si (100) substrates by DC sputtering techniqueAIP Conf. Proc.20181953151:CAS:528:DC%2BC1cXhtValtLjF10.1063/1.5032964 – reference: SharmaGNDuttaSPandeyASinghSKChatterjeeRMicrostructure and improved electrical properties of Ti-substituted BiFeO3 thin filmsMater. Res. Bull.2017952232281:CAS:528:DC%2BC2sXht12lsrnF10.1016/j.materresbull.2017.07.046 – reference: LuoQJonesAHHigh-precision determination of residual stress of polycrystalline coatings using optimised XRD-sin2ψ techniqueSurf. Coat. Tech.2010205140314081:CAS:528:DC%2BC3cXhsVGiurjK10.1016/j.surfcoat.2010.07.108 – reference: NoyanCCohenJBResidual Stress, Measurement by Diffraction and Interpretation1987New YorkSpringer-Verlag10.1007/978-1-4613-9570-6 – reference: BauerGOptical Characterization of Epitaxial Semiconductor Layers1996BerlinSpringer10.1007/978-3-642-79678-4 – reference: OrlhacXFilletCDeniardPDulacAMBrecRDetermination of the crystallized fractions of a largely amorphous multiphase material by the Rietveld methodJ. Appl. Cryst.2001341141181:CAS:528:DC%2BD3MXit1yhsLs%3D10.1107/S0021889800017908 – reference: DuttaSPandeyAYadavIThakurOPKumarAPalRChatterjeeRGrowth and electrical properties of spin coated ultrathin ZrO2 films on siliconJ. Appl. Phys.20131140141051:CAS:528:DC%2BC3sXhtVaqs7zM10.1063/1.4812733 – reference: BraggWHBraggWLThe reflexion of X-rays by crystalsProc. R. Soc. Lond. A.1913886054284381:CAS:528:DyaC3sXit1ykug%3D%3D10.1098/rspa.1913.0040 – reference: DebnathSPredeckiPSuryanarayananRUse of glancing angle X-ray powder diffractometry to depth-profile phase transformations during dissolution of in-domethacin and theophylline tabletsPharm. Res.20042111491591:CAS:528:DC%2BD2cXkt1Ogug%3D%3D10.1023/B:PHAM.0000012163.89163.f8 – reference: ColombiPZanolaPBontempiERobertiRGlancing-incidence X-ray diffraction for depth profiling of polycrystalline layersJ. Appl. Crystall.2006101761791:CAS:528:DC%2BD28XislCntro%3D10.1107/S0021889805042779 – reference: PandeyADuttaSPrakashRDalalSRamanRKapoorAKKaurDGrowth and evolution of residual stress of AlN films on silicon (100) waferMater. Sci. Semicond. Process.20165216231:CAS:528:DC%2BC28Xosl2lsrY%3D10.1016/j.mssp.2016.05.004 – reference: P. F. Fewster, X-Ray Scattering from Semiconductors, Second Edition Imperial College Press, (2003). – reference: NauerMErnstKKautekWNeumann-SpallartMDepth profile characterization of electrodeposited multi-thin-film structures by low angle of incidence X-ray diffractometryThin Solid Films200548986931:CAS:528:DC%2BD2MXms1Oms7o%3D10.1016/j.tsf.2005.05.008 – reference: SzeSMSemiconductor Devices: Physics and Technology20082ChichesterWiley India Pvt – reference: WithersPJBhadeshiaHKDHResidual stress. Part 1: measurement techniquesMater. Sci. Technol.2001173553651:CAS:528:DC%2BD3MXjtF2it78%3D10.1179/026708301101509980 – reference: AbabnehAAlsumadyMSeidelHManzanequeTHernando-GarcíaJSanchez-RojasJLBittnerASchmidUc-axis orientation and piezoelectric coefficients of AlN thin films sputter-deposited on titanium bottom electrodesAppl. Surf. Sci.201225959651:CAS:528:DC%2BC38XhtVOqt7fL10.1016/j.apsusc.2012.06.086 – reference: CatalanGScottJFPhysics and applications of bismuth ferriteAdv. Mater.200921246324851:CAS:528:DC%2BD1MXnvV2msb8%3D10.1002/adma.200802849 – ident: 4998_CR18 doi: 10.1002/andp.201200724 – volume: 107 start-page: 104833 year: 2020 ident: 4998_CR53 publication-title: Mater. Sci. Semicond. Process. doi: 10.1016/j.mssp.2019.104833 – volume: 225 start-page: 108 year: 2017 ident: 4998_CR92 publication-title: Mater. Sci. Eng. B doi: 10.1016/j.mseb.2017.08.017 – ident: 4998_CR40 – ident: 4998_CR22 doi: 10.1142/p289 – volume-title: Transmission Electron Microscopy: A Textbook for Materials Science year: 1996 ident: 4998_CR59 doi: 10.1007/978-1-4757-2519-3 – volume: 198 start-page: 68 year: 2005 ident: 4998_CR70 publication-title: Surf. Coat. Technol. doi: 10.1016/j.surfcoat.2004.10.075 – volume: 1 start-page: 22 year: 1953 ident: 4998_CR37 publication-title: Acta Metall. doi: 10.1016/0001-6160(53)90006-6 – volume: 10 start-page: 176 year: 2006 ident: 4998_CR55 publication-title: J. Appl. Crystall. doi: 10.1107/S0021889805042779 – ident: 4998_CR25 – volume: 114 start-page: 174103 year: 2013 ident: 4998_CR75 publication-title: J. Appl. Phys. doi: 10.1063/1.4828874 – volume: 27 start-page: 769 year: 2014 ident: 4998_CR100 publication-title: Int. J. Eng. Trans. B Appl. doi: 10.5829/idosi.ije.2014.27.05b.13 – volume: 01 start-page: 35 year: 2012 ident: 4998_CR89 publication-title: Cryst. Struct. Theory Appl. doi: 10.4236/csta.2012.13007 – ident: 4998_CR16 – volume: 87 start-page: 469 year: 1964 ident: 4998_CR23 publication-title: Bull. Soc. Fr. Mineral. Cristallogr. – volume: 58 start-page: 7 year: 2019 ident: 4998_CR102 publication-title: Jpn. J. Appl. Phys. doi: 10.7567/1347-4065/ab079e – volume: 47 start-page: 1405 year: 2018 ident: 4998_CR79 publication-title: J. Electron. Mater. doi: 10.1007/s11664-017-5924-8 – volume: 61 start-page: 301 year: 2005 ident: 4998_CR34 publication-title: Acta Crystallogr. A doi: 10.1107/S0108767305004496 – volume: 259 start-page: 59 year: 2012 ident: 4998_CR65 publication-title: Appl. Surf. Sci. doi: 10.1016/j.apsusc.2012.06.086 – volume: 45 start-page: 289 year: 2015 ident: 4998_CR13 publication-title: Crit. Rev. Anal. Chem. doi: 10.1080/10408347.2014.949616 – volume: 11 start-page: 102 year: 1978 ident: 4998_CR36 publication-title: J. Appl. Cryst. doi: 10.1107/S0021889878012844 – volume: 95 start-page: 223 year: 2017 ident: 4998_CR83 publication-title: Mater. Res. Bull. doi: 10.1016/j.materresbull.2017.07.046 – ident: 4998_CR46 – volume-title: Fundamental of Microfabrication-The Science of Miniaturization year: 2002 ident: 4998_CR78 doi: 10.1201/9781482274004 – volume: 31 start-page: 175 issue: 2 year: 2015 ident: 4998_CR44 publication-title: J. Mater. Sci. Technol. doi: 10.1016/j.jmst.2014.11.009 – volume: 489 start-page: 86 year: 2005 ident: 4998_CR88 publication-title: Thin Solid Films doi: 10.1016/j.tsf.2005.05.008 – year: 2012 ident: 4998_CR12 publication-title: Intl. Sch. Res. Notices doi: 10.5402/2012/852905 – volume: 26 start-page: 1239 year: 1969 ident: 4998_CR24 publication-title: J. Phys. Soc. Jpn. doi: 10.1143/JPSJ.26.1239 – volume: 72 start-page: 036502 year: 2009 ident: 4998_CR14 publication-title: Rep. Prog. Phys. doi: 10.1088/0034-4885/72/3/036502 – volume: 1953 start-page: 1 year: 2018 ident: 4998_CR66 publication-title: AIP Conf. Proc. doi: 10.1063/1.5032964 – volume: 132 start-page: 658 year: 2006 ident: 4998_CR64 publication-title: Sens. Actuators A doi: 10.1016/j.sna.2006.03.001 – volume: 216 start-page: 47 year: 2018 ident: 4998_CR82 publication-title: Mater. Chem. Phys. doi: 10.1016/j.matchemphys.2018.05.073 – volume: 45 start-page: 170 year: 1962 ident: 4998_CR30 publication-title: J. Am. Ceram. Soc. doi: 10.1111/j.1151-2916.1962.tb11114.x – volume: 7 start-page: 3571 year: 2015 ident: 4998_CR43 publication-title: ACS Appl. Mater. Interfaces. doi: 10.1021/am507397z – volume: 6 start-page: 6 year: 2012 ident: 4998_CR39 publication-title: J. Theor. Appl. Phys. doi: 10.1186/2251-7235-6-6 – volume: 10 start-page: 1 year: 2016 ident: 4998_CR11 publication-title: Crystals doi: 10.3390/cryst6080087 – volume: 45 start-page: 1 year: 2004 ident: 4998_CR2 publication-title: Mater. Sci. Eng. R doi: 10.1016/j.mser.2004.07.001 – volume-title: Introduction to Solid State Physics year: 1976 ident: 4998_CR10 – volume: 47 start-page: 4211 year: 2012 ident: 4998_CR62 publication-title: J. Mater. Sci. doi: 10.1007/s10853-011-6140-1 – volume: 122 start-page: 614 year: 2016 ident: 4998_CR81 publication-title: Appl. Phys. A doi: 10.1007/s00339-016-0143-3 – volume-title: Neutron Diffraction Principles, Instrumentation and Application year: 2013 ident: 4998_CR58 – ident: 4998_CR26 doi: 10.1002/3527607595 – volume: 105 start-page: 3289 year: 2019 ident: 4998_CR15 publication-title: Int. J. Adv. Manuf. Technol. doi: 10.1007/s00170-019-04508-1 – volume: 31 start-page: 01A148 year: 2013 ident: 4998_CR96 publication-title: J. Vac. Sci. Technol. A. doi: 10.1116/1.4772664 – volume: 88 start-page: 428 issue: 605 year: 1913 ident: 4998_CR19 publication-title: Proc. R. Soc. Lond. A. doi: 10.1098/rspa.1913.0040 – volume: 13 start-page: 814 year: 1960 ident: 4998_CR32 publication-title: Acta Cryst. doi: 10.1107/S0365110X60001941 – volume: 22 start-page: 151 year: 1967 ident: 4998_CR27 publication-title: Acta Crystallogr. doi: 10.1107/S0365110X67000234 – volume: 53 start-page: 16310 year: 1996 ident: 4998_CR72 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.53.16310 – volume: 441 start-page: 32 year: 2003 ident: 4998_CR63 publication-title: Thin Solid Films doi: 10.1016/S0040-6090(03)00911-8 – volume: 10 start-page: 175 year: 1999 ident: 4998_CR33 publication-title: J. Mater. Sci.: Mater. Electron. doi: 10.1023/A:1008935709977 – volume: 4 start-page: 1 year: 2020 ident: 4998_CR60 publication-title: NPJ 2D Mater. Appl. doi: 10.1038/s41699-020-0140-4 – volume: 17 start-page: 355 year: 2001 ident: 4998_CR41 publication-title: Mater. Sci. Technol. doi: 10.1179/026708301101509980 – volume: 7 start-page: 777 year: 2016 ident: 4998_CR95 publication-title: Adv. Mater. Lett. doi: 10.5185/amlett.2016.6364 – volume: 696 start-page: 376 year: 2017 ident: 4998_CR99 publication-title: J. Alloy Compd. doi: 10.1016/j.jallcom.2016.11.284 – volume: 10 start-page: 136 year: 2000 ident: 4998_CR3 publication-title: J. Micromech. Microeng. doi: 10.1088/0960-1317/10/2/307 – volume-title: X-ray Diffraction: A Practical Approach year: 1998 ident: 4998_CR8 doi: 10.1007/978-1-4899-0148-4 – volume: 402 start-page: 37 year: 2014 ident: 4998_CR91 publication-title: J. Cryst. Growth. doi: 10.1016/j.jcrysgro.2014.05.004 – volume: 2 start-page: 65 year: 1969 ident: 4998_CR28 publication-title: J. Appl. Cryst. doi: 10.1107/S0021889869006558 – volume: 02 start-page: 33 year: 2013 ident: 4998_CR101 publication-title: J. Synth. Theory Appl. doi: 10.4236/ojsta.2013.21003 – volume: 735 start-page: 2318 year: 2018 ident: 4998_CR90 publication-title: J. Alloy Compd. doi: 10.1016/j.jallcom.2017.11.377 – volume: 2 start-page: 710 year: 2020 ident: 4998_CR94 publication-title: ACS Appl. Electron. Mater. doi: 10.1021/acsaelm.9b00793 – volume: A82 start-page: 172 year: 1909 ident: 4998_CR76 publication-title: Proc. R. Soc. Lond. doi: 10.1098/rspa.1909.0021 – volume-title: Residual Stress, Measurement by Diffraction and Interpretation year: 1987 ident: 4998_CR45 doi: 10.1007/978-1-4613-9570-6 – volume-title: Semiconductor Devices: Physics and Technology year: 2008 ident: 4998_CR4 – volume: 7 start-page: 1421 year: 2005 ident: 4998_CR61 publication-title: J. Optoelectron. Adv. Mater. – volume-title: Mechanics of Laminated Composite Plates year: 1997 ident: 4998_CR47 – volume: 50 start-page: 6927 year: 1979 ident: 4998_CR54 publication-title: J. Appl. Phys. doi: 10.1063/1.325845 – volume-title: Elements of X-ray Crystallography year: 1968 ident: 4998_CR9 – volume: 24 start-page: 80 year: 1992 ident: 4998_CR31 publication-title: Fibre Chem. doi: 10.1007/BF00557189 – volume: 5 start-page: 16318 year: 2015 ident: 4998_CR5 publication-title: Sci. Rep. doi: 10.1038/srep16318 – volume-title: High-Resolution X-Ray Diffractometry and Topography year: 2005 ident: 4998_CR20 – volume: 43 start-page: 336 year: 1952 ident: 4998_CR42 publication-title: Phil. Mag. Series doi: 10.1080/14786440108520972 – volume-title: Optical Characterization of Epitaxial Semiconductor Layers year: 1996 ident: 4998_CR21 doi: 10.1007/978-3-642-79678-4 – ident: 4998_CR17 – volume: 67 start-page: 760 year: 2012 ident: 4998_CR69 publication-title: Scripta Mater. doi: 10.1016/j.scriptamat.2012.07.027 – volume: 5 start-page: 057149 year: 2015 ident: 4998_CR52 publication-title: AIP Adv. doi: 10.1063/1.4921757 – volume: 21 start-page: 2463 year: 2009 ident: 4998_CR84 publication-title: Adv. Mater. doi: 10.1002/adma.200802849 – volume: 109 start-page: 24 year: 2005 ident: 4998_CR98 publication-title: Sens. Actuators B doi: 10.1016/j.snb.2005.03.014 – year: 2017 ident: 4998_CR103 publication-title: Terahertz Spectrosc. Princ. Appl. doi: 10.1201/9781420007701 – volume-title: Elements of X-ray Diffraction year: 2001 ident: 4998_CR7 – volume: 509 start-page: 5017 year: 2011 ident: 4998_CR97 publication-title: J. Alloys Compd. doi: 10.1016/j.jallcom.2011.02.008 – volume: 21 start-page: 595 year: 1950 ident: 4998_CR38 publication-title: J. Appl. Phys. doi: 10.1063/1.1699713 – volume: 63 start-page: 38 year: 2010 ident: 4998_CR85 publication-title: Phys. Today doi: 10.1557/mrs.2017.86 – volume: 89 start-page: 3 year: 2006 ident: 4998_CR73 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2393004.1 – volume: 34 start-page: 114 year: 2001 ident: 4998_CR29 publication-title: J. Appl. Cryst. doi: 10.1107/S0021889800017908 – volume: 78 start-page: 1467 issue: 12 year: 2000 ident: 4998_CR6 publication-title: Curr. Sci. – volume: 418 start-page: 73 year: 2002 ident: 4998_CR49 publication-title: Thin Solid Films doi: 10.1016/S0040-6090(02)00680-6 – volume: 2 start-page: 98 year: 1918 ident: 4998_CR35 publication-title: Göttinger Nachrichten Gesell. – volume: 25 start-page: 3959 year: 2019 ident: 4998_CR68 publication-title: Microsyst. Technol. doi: 10.1007/s00542-019-04334-1 – volume: 114 start-page: 014105 year: 2013 ident: 4998_CR77 publication-title: J. Appl. Phys. doi: 10.1063/1.4812733 – volume: 20 start-page: 085609 year: 2009 ident: 4998_CR93 publication-title: Nanotechnology. doi: 10.1088/0957-4484/20/8/085609 – volume: 666 start-page: 143 year: 2018 ident: 4998_CR80 publication-title: Thin Solid Films doi: 10.1016/j.tsf.2018.09.016 – volume: 205 start-page: 1403 year: 2010 ident: 4998_CR48 publication-title: Surf. Coat. Tech. doi: 10.1016/j.surfcoat.2010.07.108 – volume-title: The Materials Science of Thin Film year: 1992 ident: 4998_CR1 – volume: 43 start-page: 11992 year: 2017 ident: 4998_CR50 publication-title: Ceram. Int. doi: 10.1016/j.ceramint.2017.06.050 – volume: 52 start-page: 16 year: 2016 ident: 4998_CR67 publication-title: Mater. Sci. Semicond. Process. doi: 10.1016/j.mssp.2016.05.004 – volume: 42 start-page: 8385 year: 2016 ident: 4998_CR86 publication-title: Ceram. Int. doi: 10.1016/j.ceramint.2016.02.054 – volume: 62 start-page: 554 year: 2007 ident: 4998_CR56 publication-title: Spectrochim. Acta Part B doi: 10.1016/j.sab.2007.02.012 – volume: 16 start-page: 83 year: 2013 ident: 4998_CR51 publication-title: Mater. Sci. Semicond. Process doi: 10.1016/j.mssp.2012.06.013 – volume: 64 start-page: 1368 year: 1985 ident: 4998_CR71 publication-title: Am. Ceram. Soc. Bull. – volume: 112 start-page: 084101 year: 2012 ident: 4998_CR74 publication-title: J. Appl. Phys. doi: 10.1063/1.4759123 – volume: 21 start-page: 149 issue: 1 year: 2004 ident: 4998_CR87 publication-title: Pharm. Res. doi: 10.1023/B:PHAM.0000012163.89163.f8 – volume: 93 start-page: 859 year: 2009 ident: 4998_CR57 publication-title: Solar Energy Mater Solar Cell doi: 10.1016/j.solmat.2008.10.009 |
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Snippet | X-ray diffraction (XRD) techniques are powerful, non-destructive characterization tool with minimal sample preparation. XRD provides the first information... |
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StartPage | 1341 |
SubjectTerms | Characterization and Evaluation of Materials Chemistry and Materials Science Crystal defects Crystal structure Crystallinity Crystallites Degree of crystallinity Depth profiling Materials Science Multilayers Multiphase Nondestructive testing Optical and Electronic Materials Parameters Polycrystals Preferred orientation Review Structural analysis Texture Thin films X ray powder diffraction X-ray diffraction |
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Title | Structural characterization of polycrystalline thin films by X-ray diffraction techniques |
URI | https://link.springer.com/article/10.1007/s10854-020-04998-w https://www.proquest.com/docview/2491437583 |
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