Structural characterization of polycrystalline thin films by X-ray diffraction techniques

X-ray diffraction (XRD) techniques are powerful, non-destructive characterization tool with minimal sample preparation. XRD provides the first information about the materials phases, crystalline structure, average crystallite size, micro and macro strain, orientation parameter, texture coefficient,...

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Published inJournal of materials science. Materials in electronics Vol. 32; no. 2; pp. 1341 - 1368
Main Authors Pandey, Akhilesh, Dalal, Sandeep, Dutta, Shankar, Dixit, Ambesh
Format Journal Article
LanguageEnglish
Published New York Springer US 01.01.2021
Springer Nature B.V
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Abstract X-ray diffraction (XRD) techniques are powerful, non-destructive characterization tool with minimal sample preparation. XRD provides the first information about the materials phases, crystalline structure, average crystallite size, micro and macro strain, orientation parameter, texture coefficient, degree of crystallinity, crystal defects etc. XRD analysis provides information about the bulk, polycrystalline thin films, and multilayer structures, which is very important in various scientific and material engineering fields. This review discusses the diffraction related phenomena/principles such as powder X-ray diffraction, and thin-film/grazing incidence X-ray diffraction (GIXRD) comprehensively for thin film samples which are used frequently in various branches of science and technology. The review also covers few case studies on polycrystalline thin-film samples related to phase analysis, preferred orientation parameter (texture coefficient) analysis, stress evaluation in thin films and multilayer, multiphase content identification, bifurcation of multiphase on multilayer samples, depth profiling in thin-film/ multilayer structures, the impact of doping effect on structural properties of thin films etc., comprehensively using GIXRD/XRD.
AbstractList X-ray diffraction (XRD) techniques are powerful, non-destructive characterization tool with minimal sample preparation. XRD provides the first information about the materials phases, crystalline structure, average crystallite size, micro and macro strain, orientation parameter, texture coefficient, degree of crystallinity, crystal defects etc. XRD analysis provides information about the bulk, polycrystalline thin films, and multilayer structures, which is very important in various scientific and material engineering fields. This review discusses the diffraction related phenomena/principles such as powder X-ray diffraction, and thin-film/grazing incidence X-ray diffraction (GIXRD) comprehensively for thin film samples which are used frequently in various branches of science and technology. The review also covers few case studies on polycrystalline thin-film samples related to phase analysis, preferred orientation parameter (texture coefficient) analysis, stress evaluation in thin films and multilayer, multiphase content identification, bifurcation of multiphase on multilayer samples, depth profiling in thin-film/ multilayer structures, the impact of doping effect on structural properties of thin films etc., comprehensively using GIXRD/XRD.
Author Pandey, Akhilesh
Dutta, Shankar
Dixit, Ambesh
Dalal, Sandeep
Author_xml – sequence: 1
  givenname: Akhilesh
  orcidid: 0000-0001-7297-8823
  surname: Pandey
  fullname: Pandey, Akhilesh
  email: akhilesh.physics@gmail.com
  organization: Solid-State Physics Laboratory, DRDO
– sequence: 2
  givenname: Sandeep
  surname: Dalal
  fullname: Dalal, Sandeep
  organization: Solid-State Physics Laboratory, DRDO
– sequence: 3
  givenname: Shankar
  surname: Dutta
  fullname: Dutta, Shankar
  organization: Solid-State Physics Laboratory, DRDO
– sequence: 4
  givenname: Ambesh
  surname: Dixit
  fullname: Dixit, Ambesh
  organization: Department of Physics, Indian Institute of Technology
BookMark eNp9kE1LAzEURYNUsK3-AVcB19F8zmSWUvyCggsV6irETGJTpjM1yVDGX-9MRxBcdPU257z73p2BSd3UFoBLgq8JxvlNJFgKjjDFCPOikGh_AqZE5AxxSVcTMMWFyBEXlJ6BWYwbjHHGmZyC95cUWpPaoCto1jpok2zw3zr5poaNg7um6kzoYtJV5WsL09rX0PlqG-FHB1co6A6W3rlBHJRkzbr2X62N5-DU6Srai985B2_3d6-LR7R8fnha3C6RYaRIyAmeSWLy0hlhsXGcyrJwFkusObOlENRmNuOllrnLmJG6tIXBosydoz0h2RxcjXt3oRlyk9o0baj7SEV5QTjLhWQ9JUfKhCbGYJ0yPh2-TEH7ShGshiLVWKTqi1SHItW-V-k_dRf8VofuuMRGKfZw_WnD31VHrB_b2otf
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ContentType Journal Article
Copyright The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021
The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021.
Copyright_xml – notice: The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021
– notice: The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021.
DBID AAYXX
CITATION
7SP
7SR
8BQ
8FD
8FE
8FG
ABJCF
AFKRA
ARAPS
BENPR
BGLVJ
CCPQU
D1I
DWQXO
F28
FR3
HCIFZ
JG9
KB.
L7M
P5Z
P62
PDBOC
PHGZM
PHGZT
PKEHL
PQEST
PQGLB
PQQKQ
PQUKI
PRINS
S0W
DOI 10.1007/s10854-020-04998-w
DatabaseName CrossRef
Electronics & Communications Abstracts
Engineered Materials Abstracts
METADEX
Technology Research Database
ProQuest SciTech Collection
ProQuest Technology Collection
Materials Science & Engineering Collection (ProQuest)
ProQuest Central UK/Ireland
Advanced Technologies & Aerospace Database
ProQuest Central (New)
Technology Collection
ProQuest One Community College
ProQuest Materials Science Collection
ProQuest Central Korea
ANTE: Abstracts in New Technology & Engineering
Engineering Research Database
SciTech Premium Collection
Materials Research Database
Materials Science Database
Advanced Technologies Database with Aerospace
Advanced Technologies & Aerospace Database
ProQuest Advanced Technologies & Aerospace Collection
Materials Science Collection (ProQuest)
ProQuest Central Premium
ProQuest One Academic
ProQuest One Academic Middle East (New)
ProQuest One Academic Eastern Edition (DO NOT USE)
ProQuest One Applied & Life Sciences
ProQuest One Academic
ProQuest One Academic UKI Edition
ProQuest Central China
DELNET Engineering & Technology Collection
DatabaseTitle CrossRef
Materials Research Database
Technology Collection
Technology Research Database
ProQuest One Academic Middle East (New)
ProQuest Advanced Technologies & Aerospace Collection
Materials Science Collection
SciTech Premium Collection
ProQuest One Community College
ProQuest Central China
ProQuest Central
ProQuest One Applied & Life Sciences
Engineered Materials Abstracts
ProQuest Central Korea
Materials Science Database
ProQuest Central (New)
Advanced Technologies Database with Aerospace
ANTE: Abstracts in New Technology & Engineering
ProQuest Materials Science Collection
Advanced Technologies & Aerospace Collection
ProQuest One Academic Eastern Edition
Electronics & Communications Abstracts
ProQuest Technology Collection
ProQuest SciTech Collection
METADEX
Advanced Technologies & Aerospace Database
ProQuest One Academic UKI Edition
ProQuest DELNET Engineering and Technology Collection
Materials Science & Engineering Collection
Engineering Research Database
ProQuest One Academic
ProQuest One Academic (New)
DatabaseTitleList
Materials Research Database
Database_xml – sequence: 1
  dbid: 8FG
  name: ProQuest Technology Collection
  url: https://search.proquest.com/technologycollection1
  sourceTypes: Aggregation Database
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 1573-482X
EndPage 1368
ExternalDocumentID 10_1007_s10854_020_04998_w
GroupedDBID -4Y
-58
-5G
-BR
-EM
-Y2
-~C
-~X
.4S
.86
.DC
.VR
06C
06D
0R~
0VY
199
1N0
1SB
2.D
203
28-
29L
2J2
2JN
2JY
2KG
2KM
2LR
2P1
2VQ
2~H
30V
4.4
406
408
409
40D
40E
5GY
5QI
5VS
67Z
6NX
78A
8FE
8FG
8UJ
95-
95.
95~
96X
AAAVM
AABHQ
AACDK
AAHNG
AAIAL
AAIKT
AAJBT
AAJKR
AANZL
AARHV
AARTL
AASML
AATVU
AAUYE
AAWCG
AAYIU
AAYQN
AAYTO
AAYZH
ABAKF
ABBBX
ABBXA
ABDPE
ABDZT
ABECU
ABFTD
ABFTV
ABHLI
ABHQN
ABJCF
ABJNI
ABJOX
ABKCH
ABKTR
ABMNI
ABMQK
ABNWP
ABQBU
ABQSL
ABSXP
ABTEG
ABTHY
ABTKH
ABTMW
ABULA
ABWNU
ABXPI
ACAOD
ACBXY
ACDTI
ACGFS
ACHSB
ACHXU
ACIWK
ACKNC
ACMDZ
ACMLO
ACOKC
ACOMO
ACPIV
ACZOJ
ADHHG
ADHIR
ADINQ
ADKNI
ADKPE
ADMLS
ADRFC
ADTPH
ADURQ
ADYFF
ADZKW
AEBTG
AEFIE
AEFQL
AEGAL
AEGNC
AEJHL
AEJRE
AEKMD
AEMSY
AENEX
AEOHA
AEPYU
AESKC
AETLH
AEVLU
AEXYK
AFEXP
AFGCZ
AFKRA
AFLOW
AFQWF
AFWTZ
AFZKB
AGAYW
AGDGC
AGGDS
AGJBK
AGMZJ
AGQEE
AGQMX
AGRTI
AGWIL
AGWZB
AGYKE
AHAVH
AHBYD
AHKAY
AHSBF
AHYZX
AIAKS
AIGIU
AIIXL
AILAN
AITGF
AJBLW
AJRNO
AJZVZ
ALMA_UNASSIGNED_HOLDINGS
ALWAN
AMKLP
AMXSW
AMYLF
AMYQR
AOCGG
ARAPS
ARCSS
ARMRJ
ASPBG
AVWKF
AXYYD
AYJHY
AZFZN
B-.
BA0
BBWZM
BDATZ
BENPR
BGLVJ
BGNMA
BSONS
CAG
CCPQU
COF
CS3
CSCUP
D1I
DDRTE
DL5
DNIVK
DPUIP
DU5
EBLON
EBS
EDO
EIOEI
EJD
ESBYG
FEDTE
FERAY
FFXSO
FIGPU
FINBP
FNLPD
FRRFC
FSGXE
FWDCC
G-Y
G-Z
GGCAI
GGRSB
GJIRD
GNWQR
GQ6
GQ7
GQ8
GXS
H13
HCIFZ
HF~
HG5
HG6
HMJXF
HQYDN
HRMNR
HVGLF
HZ~
I-F
I09
IHE
IJ-
IKXTQ
IWAJR
IXC
IXD
IXE
IZIGR
IZQ
I~X
I~Y
I~Z
J-C
J0Z
JBSCW
JCJTX
JZLTJ
KB.
KDC
KOV
KOW
LAK
LLZTM
M4Y
MA-
MK~
N2Q
N9A
NB0
NDZJH
NPVJJ
NQJWS
NU0
O9-
O93
O9G
O9I
O9J
OAM
OVD
P0-
P19
P2P
P62
P9N
PDBOC
PKN
PT4
PT5
Q2X
QF4
QM1
QN7
QO4
QOK
QOR
QOS
R4E
R89
R9I
RHV
RNI
RNS
ROL
RPX
RSV
RZC
RZE
RZK
S0W
S16
S1Z
S26
S27
S28
S3B
SAP
SCG
SCLPG
SCM
SDH
SDM
SHX
SISQX
SJYHP
SNE
SNPRN
SNX
SOHCF
SOJ
SPISZ
SRMVM
SSLCW
STPWE
SZN
T13
T16
TEORI
TN5
TSG
TSK
TSV
TUS
U2A
UG4
UOJIU
UTJUX
UZXMN
VC2
VFIZW
W23
W48
W4F
WJK
WK8
YLTOR
Z45
Z7R
Z7S
Z7V
Z7W
Z7X
Z7Y
Z7Z
Z83
Z85
Z88
Z8M
Z8N
Z8P
Z8R
Z8T
Z8W
Z8Z
Z92
ZMTXR
~EX
AAPKM
AAYXX
ABBRH
ABDBE
ABFSG
ACSTC
ADHKG
AEZWR
AFDZB
AFHIU
AFOHR
AGQPQ
AHPBZ
AHWEU
AIXLP
ATHPR
AYFIA
CITATION
PHGZM
PHGZT
7SP
7SR
8BQ
8FD
ABRTQ
DWQXO
F28
FR3
JG9
L7M
PKEHL
PQEST
PQGLB
PQQKQ
PQUKI
PRINS
ID FETCH-LOGICAL-c319t-f54681c7dfc5e0cf428d9fe080a43ed552e6e64da87f63c8ade9c05d7ff2a4383
IEDL.DBID U2A
ISSN 0957-4522
IngestDate Fri Jul 25 11:07:00 EDT 2025
Thu Apr 24 22:51:12 EDT 2025
Tue Jul 01 02:34:57 EDT 2025
Fri Feb 21 02:49:15 EST 2025
IsPeerReviewed true
IsScholarly true
Issue 2
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c319t-f54681c7dfc5e0cf428d9fe080a43ed552e6e64da87f63c8ade9c05d7ff2a4383
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ORCID 0000-0001-7297-8823
PQID 2491437583
PQPubID 326250
PageCount 28
ParticipantIDs proquest_journals_2491437583
crossref_citationtrail_10_1007_s10854_020_04998_w
crossref_primary_10_1007_s10854_020_04998_w
springer_journals_10_1007_s10854_020_04998_w
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 20210100
2021-01-00
20210101
PublicationDateYYYYMMDD 2021-01-01
PublicationDate_xml – month: 1
  year: 2021
  text: 20210100
PublicationDecade 2020
PublicationPlace New York
PublicationPlace_xml – name: New York
PublicationTitle Journal of materials science. Materials in electronics
PublicationTitleAbbrev J Mater Sci: Mater Electron
PublicationYear 2021
Publisher Springer US
Springer Nature B.V
Publisher_xml – name: Springer US
– name: Springer Nature B.V
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SSID ssj0006438
Score 2.5985508
SecondaryResourceType review_article
Snippet X-ray diffraction (XRD) techniques are powerful, non-destructive characterization tool with minimal sample preparation. XRD provides the first information...
SourceID proquest
crossref
springer
SourceType Aggregation Database
Enrichment Source
Index Database
Publisher
StartPage 1341
SubjectTerms Characterization and Evaluation of Materials
Chemistry and Materials Science
Crystal defects
Crystal structure
Crystallinity
Crystallites
Degree of crystallinity
Depth profiling
Materials Science
Multilayers
Multiphase
Nondestructive testing
Optical and Electronic Materials
Parameters
Polycrystals
Preferred orientation
Review
Structural analysis
Texture
Thin films
X ray powder diffraction
X-ray diffraction
SummonAdditionalLinks – databaseName: ProQuest Central (New)
  dbid: BENPR
  link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwEA-6veiD-InTKXnwTYNtmrTpk6hMhuAQdTCfSpsPHMx2roPR_96kTVsV3HPTPNzl7n53yf0OgAsnDBTjnj68Shs5cTlBoc4ikB9IFXvaY-IyUXwa-cMxeZzQiS245fZZZe0TS0ctMm5q5Nc6TdChXaNb72b-hczUKHO7akdobIKudsGMdUD3bjB6fml8sY63rGLbM-zeGNu2Gds8xyhBJn0ysJ-h1e_Q1OLNP1ekZeR52AU7FjLC20rHe2BDpvtg-weR4AF4fy1pYA2FBuQNBXPVYQkzBefZrOCLQiNBQ8Et4fJjmkI1nX3mMCngBC3iAppRKYuqzQE2zK75IRg_DN7uh8gOTUBcW9MSKUp85vJAKE6lw5VOL0SopAaGMfGkoBRLX_pExCxQvsdZLGTIHSoCpXBseEuPQCfNUnkMYCITgl2PEi5d83omEUpSHEhXJUw5wukBt5ZXxC2juBlsMYtaLmQj40jLOCplHK164LL5Z17xaaxd3a_VEFnbyqP2JPTAVa2a9vP_u52s3-0UbGHzYKWsr_RBRytOnmnEsUzO7bH6BlZj06w
  priority: 102
  providerName: ProQuest
Title Structural characterization of polycrystalline thin films by X-ray diffraction techniques
URI https://link.springer.com/article/10.1007/s10854-020-04998-w
https://www.proquest.com/docview/2491437583
Volume 32
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV07T8MwED5Bu8CAeIpCqTywQaTEsRN3LKgPgagQUKmdosSxRaWSVm2lKv-ecx5tQYDElCGOhzvb933x3XcA13bT10K6uHg1bnLmSGY1kUVYnq906OKJSTOi-NT3egP2MOTDoihsUWa7l1eS2Um9VewmOLMM3TEwXVirXahy5O4mkWtAW-vzF2OsyBX2jKI3pUWpzM9zfA1HG4z57Vo0izadQzgoYCJp5X49gh2VHMP-lnjgCYxeM-lXI5tB5Fp2Oa-qJFNNZtNJKucpoj8ju63I8n2cED2efCxIlJKhNQ9TYtqjzPPSBrJWc12cwqDTfrvvWUWjBEviDlpamjNPONKPteTKlhopRdzUCsFgyFwVc06VpzwWh8LXnitFGKumtHnsa01Do1V6BpVkmqhzIJGKGHVczqRyTMZMFGvFqa8cHQltx3YNnNJegSxUxE0zi0mw0T82Ng7QxkFm42BVg5v1N7NcQ-PP0fXSDUGxnxYBkkQEdsht3Brclq7ZvP59tov_Db-EPWqSVrJ_LHWooCPVFaKOZdSAXdHpNqDa6o4e2_i8a_efXxrZ0vsEr5jT1Q
linkProvider Springer Nature
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV3JTsMwEB2xHIADYhWFAj7ACSwSx07SA0IIKGW9AFI5hcSLQCptaStV-Sm-kXGWFpDg1nMSH2aeZ944njcAe04tMKH0ELwGNzl3Jac1rCKoH2gTexgxWVYo3t37jSd-3RTNKfgse2HstcoyJmaBWnWkPSM_wjIBUzuyW--k-0Ht1Cj7d7UcoZHD4kanQyzZ-sdX5-jffcbqF49nDVpMFaAS4TagRnA_dGWgjBTakQb5t6oZjcwp5p5WQjDta5-rOAyM78kwVromHaECY1hshT1x3WmY5R5mctuZXr8cRX7M7mGu7We1xBkrmnSKVr1QcGqLNVtkhHT4MxGO2e2vH7JZnqsvwWJBUMlpjqhlmNLtFVj4Jlu4Cs8PmeisFewgciT4nPdzko4h3U4rlb0UeacV_NZk8PrWJuat9d4nSUqatBenxA5m6eVNFWSkI9tfg6eJGHMdZtqdtt4AkuiEM9cTXGrX3tVJlNGCBdo1SWgc5VTALe0VyUK_3I7RaEVj5WVr4whtHGU2joYVOBh9083VO_59u1q6ISp2cj8a464Ch6Vrxo__Xm3z_9V2Ya7xeHcb3V7d32zBPLNXZbKTnSrMoBP1NnKdQbKTAYzAy6QR_QVwLxC3
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV1LT-MwEB6VVlqxB8RjEV1ePiwnsEgcO0kPCPFoVRao0LJI5RQSPwRSt-22lar8NX4d4zxaQIIb5yQ-zHz2fOPMfAPwy2kEJpQegtfgJueu5LSBWQT1A21iD09MliWK1x2_fcd_d0W3As9lL4wtqyzPxOygVgNp78gPMU3A0I7s1js0RVnEzXnrePif2glS9k9rOU4jh8ilTqeYvo2PLs7R13uMtZp_z9q0mDBAJUJvQo3gfujKQBkptCMNcnHVMBpZVMw9rYRg2tc-V3EYGN-TYax0QzpCBcaw2Ip84roLUAtsVlSF2mmzc_NnFgcw1oe50p9VFmesaNkpGvdCwalN3WzKEdLp27A457rvfs9mUa-1DEsFXSUnOb5WoKL7q_D9lYjhGtzfZhK0Vr6DyJn8c97dSQaGDAe9VI5SZKFW_luTyeNTn5in3r8xSVLSpaM4JXZMyyhvsSAzVdnxD7j7EnOuQ7U_6OsNIIlOOHM9waV2beVOoowWLNCuSULjKKcObmmvSBZq5naoRi-a6zBbG0do4yizcTStw_7sm2Gu5fHp21ulG6JiX4-jOQrrcFC6Zv7449V-fr7aLnxDNEdXF53LTVhktm4mu-bZgir6UG8j8ZkkOwXCCDx8NahfAIhdFkk
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Structural+characterization+of+polycrystalline+thin+films+by+X-ray+diffraction+techniques&rft.jtitle=Journal+of+materials+science.+Materials+in+electronics&rft.au=Pandey%2C+Akhilesh&rft.au=Dalal%2C+Sandeep&rft.au=Dutta%2C+Shankar&rft.au=Dixit%2C+Ambesh&rft.date=2021-01-01&rft.pub=Springer+US&rft.issn=0957-4522&rft.eissn=1573-482X&rft.volume=32&rft.issue=2&rft.spage=1341&rft.epage=1368&rft_id=info:doi/10.1007%2Fs10854-020-04998-w&rft.externalDocID=10_1007_s10854_020_04998_w
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0957-4522&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0957-4522&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0957-4522&client=summon