APA (7th ed.) Citation

Azouaoui, A., Harbi, A., Moutaabbid, M., Idiri, M., eddiai, A., Benzakour, N., . . . Rezzouk, A. (2023). First-principle investigation of LiSrX (X=P and As) half-Heusler semiconductor compounds. Indian journal of physics, 97(6), 1727-1737. https://doi.org/10.1007/s12648-022-02522-w

Chicago Style (17th ed.) Citation

Azouaoui, A., et al. "First-principle Investigation of LiSrX (X=P and As) Half-Heusler Semiconductor Compounds." Indian Journal of Physics 97, no. 6 (2023): 1727-1737. https://doi.org/10.1007/s12648-022-02522-w.

MLA (9th ed.) Citation

Azouaoui, A., et al. "First-principle Investigation of LiSrX (X=P and As) Half-Heusler Semiconductor Compounds." Indian Journal of Physics, vol. 97, no. 6, 2023, pp. 1727-1737, https://doi.org/10.1007/s12648-022-02522-w.