Frequency and voltage-dependent electrical parameters, interface traps, and series resistance profile of Au/(NiS:PVP)/n-Si structures

• Published in: Journal of materials science. Materials in electronics Vol. 32; no. 10; pp. 13693 - 13707
• Main Authors: Ulusoy, M., Altındal, Ş., Durmuş, P., Özçelik, S., Azizian-Kalandaragh, Y.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.05.2021; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Depletion; Dielectric properties; Diffusion barriers; Dipoles; Electric contacts; Electric potential; Electrical impedance; Energy storage; Interlayers; Materials Science; Optical and Electronic Materials; Parameters; Polarization; Silicon substrates; Spin coating; Voltage

A thin (NiS-doped PVP) interface layer was spin-coated on n-Si substrate, and between Au contact were prepared on the surface by the sputtering method and then their basic electrical features, for example, diffusion-potential (V D ), doping density of donor-atoms (N D ), Fermi-energy (E F ), barrier...