Analog/RF and Power Performance Analysis of an Underlap DG AlGaN/GaN Based High-K Dielectric MOS-HEMT

• Published in: SILICON Vol. 14; no. 5; pp. 2211 - 2218
• Main Authors: Roy, Akash, Mitra, Rajrup, Mondal, Arnab, Kundu, Atanu
• Format: Journal Article
• Language: English
• Published: Dordrecht Springer Netherlands 01.04.2022; Springer Nature B.V
• Subjects: Aluminum gallium nitrides; Chemistry; Chemistry and Materials Science; Electric fields; Environmental Chemistry; Gallium nitrides; Heterojunctions; High electron mobility transistors; Inorganic Chemistry; Lasers; Materials Science; MOS devices; Optical Devices; Optics; Original Paper; Photonics; Polymer Sciences; Satellite communications; Simulation; Transconductance; Velocity; Underlapped dual gate(U-DG) MOS HEMT; Symmetric Underlap; GaN/AlGaN; Channel length modulation; High-k dielectric
• ISSN: 1876-990X; 1876-9918
• DOI: 10.1007/s12633-021-01020-8

This paper exemplifies an exhaustive, figurative and subjective study on the RF performance and DC characteristics analysis of an Underlapped Double-Gate (U-DG) AlGaN/GaN heterojunction-based MOS-HEMT device with Hafnium-based high-k dielectric gate material. This paper depicts the effect of gate length variations on the drain current (I D ), the transconductance (g m ), the transconductance generation factor (g m /I D ) and the RF FOMs intrinsic capacitances (C GD , C GS and C GG ), intrinsic resistances (R GD and R GS ), cut-off frequency (f T ) and maximum oscillation frequency (f MAX ). This study reveals shortening of channel length leading to better gate controllability hence an overall superior analog and RF performance is achieved. The U-DG AlGaN/GaN based MOS-HEMT device of 100 nm channel length shows a better Power Output Efficiency (POE) of 33% in contrast to 31% and 23% for the 200 nm and 300 nm devices respectively.