2D MXene incorporated nickel hydroxide composite for supercapacitor application

In the current investigation, we report the successful synthesis of a novel Ni(OH) 2 /Ti 3 C 2 T x MXene nanocomposite via a microwave-assisted technique, specifically tailored for supercapacitor applications. The inherent semiconductor properties of nickel hydroxide often impede its electrochemical...

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Published inJournal of materials science. Materials in electronics Vol. 35; no. 10; p. 697
Main Authors Lokhande, P. E., Jagtap, Chaitali, Kadam, Vishal, Udayabhaskar, R., Kumar, Deepak, Ali Al-Asbahi, Bandar, Anil Kumar, Yedluri
Format Journal Article
LanguageEnglish
Published New York Springer US 01.04.2024
Springer Nature B.V
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Summary:In the current investigation, we report the successful synthesis of a novel Ni(OH) 2 /Ti 3 C 2 T x MXene nanocomposite via a microwave-assisted technique, specifically tailored for supercapacitor applications. The inherent semiconductor properties of nickel hydroxide often impede its electrochemical capabilities; however, the integration with a conductive host material can significantly ameliorate this limitation. To this end, Titanium Carbide (Ti 3 C 2 T x ) was incorporated during the Nickel Hydroxide (Ni(OH) 2 ) synthesis process, resulting in the in-situ formation of Ni(OH) 2 nanosheets homogeneously anchored onto the MXene sheets. The electrode derived from this nanocomposite showcased exceptional electrochemical attributes. Notably, it achieved a remarkable-specific capacitance peak of 675 Fg −1 at a current density of 2 Ag −1 , coupled with outstanding stability and cyclability metrics. Furthermore, the asymmetric supercapacitor engineered with the synthesized material attained an energy density of 9.25 Whkg −1 and a power density of 3.2 kWkg −1 . This device not only demonstrated superior rate capability but also sustained cyclic stability. The empirical evidence gathered from these experiments underscores the promising potential of metal hydroxide/MXene nanocomposites in advancing supercapacitor technology.
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ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-024-12447-1