Research of the shielding effect and radiation resistance of composite CuBi2O4 films as well as their practical applications

The aim of this work is to assess the prospects of using CuBi 2 O 4 composite films of various thicknesses as protective coatings against exposure to ionizing radiation of up to 150 MeV and doses of 1 × 10 13 –10 15 ion/cm 2 , characteristic of the effects of overlapping cascade defects in the targe...

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Published inJournal of materials science. Materials in electronics Vol. 31; no. 14; pp. 11729 - 11740
Main Authors Kadyrzhanov, K. K., Shlimas, D. I., Kozlovskiy, A. L., Zdorovets, M. V.
Format Journal Article
LanguageEnglish
Published New York Springer US 01.07.2020
Springer Nature B.V
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Abstract The aim of this work is to assess the prospects of using CuBi 2 O 4 composite films of various thicknesses as protective coatings against exposure to ionizing radiation of up to 150 MeV and doses of 1 × 10 13 –10 15 ion/cm 2 , characteristic of the effects of overlapping cascade defects in the target. The relevance and novelty of the study lies in the search for alternative sources of screening for the effects of radiation damage to microelectronic devices without a significant increase in the mass–overall dimensions of microcircuits. This paper presents the results of a study of the radiation resistance of the structural, mechanical, and strength properties of synthesized CuBi 2 O 4 films depending on the film thickness and radiation dose. Electrochemical deposition was used as a synthesis method, which allows one to control with high accuracy the phase composition and morphology of the synthesized films. Synthesized films were shown to possess a significant degree of stability to irradiation with the increasing film thickness from 5 to 10 μm. Moreover, in the case of films with a thickness of 3 μm, a decrease in the strength and structural properties is due to phase transition processes initiated by irradiation due to the transfer of energy to the crystalline subsystem as a result of elastic and inelastic collisions.
AbstractList The aim of this work is to assess the prospects of using CuBi2O4 composite films of various thicknesses as protective coatings against exposure to ionizing radiation of up to 150 MeV and doses of 1 × 1013–1015 ion/cm2, characteristic of the effects of overlapping cascade defects in the target. The relevance and novelty of the study lies in the search for alternative sources of screening for the effects of radiation damage to microelectronic devices without a significant increase in the mass–overall dimensions of microcircuits. This paper presents the results of a study of the radiation resistance of the structural, mechanical, and strength properties of synthesized CuBi2O4 films depending on the film thickness and radiation dose. Electrochemical deposition was used as a synthesis method, which allows one to control with high accuracy the phase composition and morphology of the synthesized films. Synthesized films were shown to possess a significant degree of stability to irradiation with the increasing film thickness from 5 to 10 μm. Moreover, in the case of films with a thickness of 3 μm, a decrease in the strength and structural properties is due to phase transition processes initiated by irradiation due to the transfer of energy to the crystalline subsystem as a result of elastic and inelastic collisions.
The aim of this work is to assess the prospects of using CuBi 2 O 4 composite films of various thicknesses as protective coatings against exposure to ionizing radiation of up to 150 MeV and doses of 1 × 10 13 –10 15 ion/cm 2 , characteristic of the effects of overlapping cascade defects in the target. The relevance and novelty of the study lies in the search for alternative sources of screening for the effects of radiation damage to microelectronic devices without a significant increase in the mass–overall dimensions of microcircuits. This paper presents the results of a study of the radiation resistance of the structural, mechanical, and strength properties of synthesized CuBi 2 O 4 films depending on the film thickness and radiation dose. Electrochemical deposition was used as a synthesis method, which allows one to control with high accuracy the phase composition and morphology of the synthesized films. Synthesized films were shown to possess a significant degree of stability to irradiation with the increasing film thickness from 5 to 10 μm. Moreover, in the case of films with a thickness of 3 μm, a decrease in the strength and structural properties is due to phase transition processes initiated by irradiation due to the transfer of energy to the crystalline subsystem as a result of elastic and inelastic collisions.
Author Kadyrzhanov, K. K.
Shlimas, D. I.
Kozlovskiy, A. L.
Zdorovets, M. V.
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  givenname: D. I.
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  fullname: Shlimas, D. I.
  organization: L.N. Gumilyov Eurasian National University, The Institute of Nuclear Physics of Republic of Kazakhstan
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  surname: Kozlovskiy
  fullname: Kozlovskiy, A. L.
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  givenname: M. V.
  surname: Zdorovets
  fullname: Zdorovets, M. V.
  organization: L.N. Gumilyov Eurasian National University, The Institute of Nuclear Physics of Republic of Kazakhstan, Ural Federal University
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Snippet The aim of this work is to assess the prospects of using CuBi 2 O 4 composite films of various thicknesses as protective coatings against exposure to ionizing...
The aim of this work is to assess the prospects of using CuBi2O4 composite films of various thicknesses as protective coatings against exposure to ionizing...
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SubjectTerms Characterization and Evaluation of Materials
Chemistry and Materials Science
Crystal defects
Elastic scattering
Film thickness
Inelastic collisions
Ionizing radiation
Materials Science
Morphology
Optical and Electronic Materials
Phase composition
Phase transitions
Protective coatings
Radiation damage
Radiation dosage
Radiation effects
Radiation shielding
Radiation tolerance
Subsystems
Synthesis
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Title Research of the shielding effect and radiation resistance of composite CuBi2O4 films as well as their practical applications
URI https://link.springer.com/article/10.1007/s10854-020-03724-w
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