Subthreshold Performance Analysis of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel Field Effect Transistor for Ultra Low Power Applications

• Published in: Journal of electronic materials Vol. 48; no. 10; pp. 6724 - 6734
• Main Authors: Venkatesh, M., Suguna, M., Balamurugan, N. B.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.10.2019; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; CMOS; Computer simulation; Dielectrics; Electronics and Microelectronics; Field effect transistors; Germanium; Hafnium oxide; Instrumentation; Materials Science; Mathematical models; Optical and Electronic Materials; Semiconductor devices; Silicon; Silicon devices; Solid State Physics; High-K dielectric; germanium source; subthreshold; dual halo doping; surrounding gate TFET

An improved subthreshold analytical model of Germanium source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET Ge(SRC)-DH-DD-TM-SG-TFET is proposed. The dielectric gate oxide structure is comprised of Silicon-dioxide and Hafnium oxide. The high-K dielectric materials overcomes t...