Subthreshold Performance Analysis of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel Field Effect Transistor for Ultra Low Power Applications

An improved subthreshold analytical model of Germanium source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET Ge(SRC)-DH-DD-TM-SG-TFET is proposed. The dielectric gate oxide structure is comprised of Silicon-dioxide and Hafnium oxide. The high-K dielectric materials overcomes t...

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Published inJournal of electronic materials Vol. 48; no. 10; pp. 6724 - 6734
Main Authors Venkatesh, M., Suguna, M., Balamurugan, N. B.
Format Journal Article
LanguageEnglish
Published New York Springer US 01.10.2019
Springer Nature B.V
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Abstract An improved subthreshold analytical model of Germanium source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET Ge(SRC)-DH-DD-TM-SG-TFET is proposed. The dielectric gate oxide structure is comprised of Silicon-dioxide and Hafnium oxide. The high-K dielectric materials overcomes the Short Channel Effects caused by ultrathin silicon devices. The subthreshold analysis is carried out by solving a 2-D Poisson’s equation using the parabolic approximation method. The electrical characteristics of Ge(SRC)-DH-DD-TM-SG-Tunnel FET are analyzed using a 3-D Sentaurus TCAD device simulator and compared with the silicon based single halo and triple material surrounding gate TFET structures. The proposed model shows a lower ambipolar current and a better I ON /I OFF ratio of 10 6 . Moreover, the influence of germanium/silicon in dual dielectric materials has reduced the tunneling barrier width and the ON current (10 −4  A/μm) of the proposed device and improved at the level of CMOS transistors.
AbstractList An improved subthreshold analytical model of Germanium source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET Ge(SRC)-DH-DD-TM-SG-TFET is proposed. The dielectric gate oxide structure is comprised of Silicon-dioxide and Hafnium oxide. The high-K dielectric materials overcomes the Short Channel Effects caused by ultrathin silicon devices. The subthreshold analysis is carried out by solving a 2-D Poisson’s equation using the parabolic approximation method. The electrical characteristics of Ge(SRC)-DH-DD-TM-SG-Tunnel FET are analyzed using a 3-D Sentaurus TCAD device simulator and compared with the silicon based single halo and triple material surrounding gate TFET structures. The proposed model shows a lower ambipolar current and a better I ON /I OFF ratio of 10 6 . Moreover, the influence of germanium/silicon in dual dielectric materials has reduced the tunneling barrier width and the ON current (10 −4  A/μm) of the proposed device and improved at the level of CMOS transistors.
An improved subthreshold analytical model of Germanium source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET Ge(SRC)-DH-DD-TM-SG-TFET is proposed. The dielectric gate oxide structure is comprised of Silicon-dioxide and Hafnium oxide. The high-K dielectric materials overcomes the Short Channel Effects caused by ultrathin silicon devices. The subthreshold analysis is carried out by solving a 2-D Poisson’s equation using the parabolic approximation method. The electrical characteristics of Ge(SRC)-DH-DD-TM-SG-Tunnel FET are analyzed using a 3-D Sentaurus TCAD device simulator and compared with the silicon based single halo and triple material surrounding gate TFET structures. The proposed model shows a lower ambipolar current and a better ION/IOFF ratio of 106. Moreover, the influence of germanium/silicon in dual dielectric materials has reduced the tunneling barrier width and the ON current (10−4 A/μm) of the proposed device and improved at the level of CMOS transistors.
Author Venkatesh, M.
Suguna, M.
Balamurugan, N. B.
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Cites_doi 10.1016/j.spmi.2016.06.001
10.1109/TED.2017.2724560
10.1007/s11664-018-6174-0
10.1063/1.1521517
10.1109/TED.2017.2769423
10.1063/1.3386521
10.1109/LED.2015.2432061
10.1109/T-ED.1976.18468
10.1109/TED.2013.2276888
10.1016/S0167-9317(04)00224-2
10.1016/j.spmi.2016.02.027
10.1109/JEDS.2014.2326622
10.1007/s11664-017-5823-z
10.1109/TED.2017.2754297
10.1109/TED.2012.2218514
10.1109/LED.2009.2028907
10.1109/N-SSC.2006.4785860
10.1016/j.sse.2009.05.009
10.1109/TED.2016.2581842
10.1109/PROC.1967.6123
10.1038/nature10679
10.1007/s00542-015-2585-5
10.1016/j.spmi.2017.06.036
10.1103/PhysRevLett.93.196805
10.1109/MAHC.2010.28
10.1109/LED.2007.892366
10.1109/LED.2005.860381
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Keywords High-K dielectric
germanium source
subthreshold
dual halo doping
surrounding gate TFET
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References MooreGEIEEE Solid-State Circuits Soc. Newsl.2006383310.1109/N-SSC.2006.4785860
KaneEOJ. Appl. Phys.196121
ZhangQZhaoWSeabaughATransIEEEElectron Devices200627410.1109/LED.2005.860381
KoomeyJGBerardSSanchezMWongHAnnIEEEHist. Comput.2010334610.1109/MAHC.2010.28
LombardiCManziniSSaporitoAVanziMTransIEEEComput. Des. Integr. Circ. Syst.198871164
ChanderSBaishyaSIEEE Electron Device Lett.20153671410.1109/LED.2015.2432061
BaggaNavajeetDasguptaSudebIEEE Trans. Electron Device201764210.1109/TED.2017.2769423
MullerRSKaminsTIChanMDevice Electronics for Integrated Circuits20031New YorkWiley443
MookerjeaSKrishnanRDattaSNarayananVIEEE Electron Device Lett.2009301010.1109/LED.2009.2028907
AnandSSarinRKJ. Electron. Mater.2018
VanithaPSamuelTSANirmalDAEU-Int. JElectron. Commun.2019993439
A. Andrew Roobert, D. Gracia Nirmala Rani, S. Rajaram, IET Circ. Device Syst. (2019).https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2018.5291;jsessionid=4nvar65uadqhn.x-iet-live-01
Sentaurus TCAD device user guide[online].Available:http://www.synopsys.com.
KretzJDreeskornfeldLSchro¨terRLandgrafEHofmannFRo¨snerWMicroelectron. Eng.200473–7480310.1016/S0167-9317(04)00224-2
GuptaSNigamKPandeySSharmaDKondekarPNTransIEEEElectron Devices201764473110.1109/TED.2017.2754297
KumarMJJanardhananSTransIEEEElectron Devices2013601010.1109/TED.2013.2276888
IonescuAMRielHNature2011479737310.1038/nature10679
LuHSeabaughAIEEE J. Electron Devices Soc.201424410.1109/JEDS.2014.2326622
YeoYCKingTJHuCJ. Appl. Phys.200292726610.1063/1.1521517
ShakerAEl SabbaghMEl-BannaMMTransIEEEElectron Devices201764354110.1109/TED.2017.2724560
LuisierMKlimeckGJ. Appl. Phys.2010107810.1063/1.3386521
AnandSSarinRKSuperlattices Microstruct.2016976010.1016/j.spmi.2016.06.001
ChoiWYLeeWTransIEEEElectron Devices2010579
SinghGAminSIAnandSSarinRKSuperlattices Microstruct.2016926010.1016/j.spmi.2016.02.027
MaL-YNordinANSoinNMicrosyst. Technol.20162253710.1007/s00542-015-2585-5
AwadhiyaBPandeySNigamKKondekarPNSuperlatt. Microstruct.201711129310.1016/j.spmi.2017.06.036
KahngDTransIEEEElectron Devices19762365510.1109/T-ED.1976.18468
CaugheyDMThomasREProc. IEEE196755219210.1109/PROC.1967.6123
PalADuttaAKTransIEEEElectron Devices201663321310.1109/TED.2016.2581842
ChoiWYParkBGLeeJDLiuTJKIEEE Electron Device Lett.200728810.1109/LED.2007.892366
KaoK-HVerhulstASVandenbergheWGSoréeBGroesenekenGDe MeyerKTransIEEEElectron Device201259210.1109/TED.2012.2218514
MallikAChattopadhyayATransIEEEElectron Devices201259210.1109/TED.2012.2218514
AppenzellerJLinYMKnochJAvourisPPhys. Rev. Lett.2004931910.1103/PhysRevLett.93.196805
SandowCKnochJUrbanCZhaoQTMantlSSolid State Electron.200953112610.1016/j.sse.2009.05.009
ImenabadRMSaremiMJ. Electron. Mater.2017
M Luisier (7492_CR11) 2010; 107
A Pal (7492_CR34) 2016; 63
MJ Kumar (7492_CR16) 2013; 60
J Appenzeller (7492_CR3) 2004; 93
G Singh (7492_CR17) 2016; 92
B Awadhiya (7492_CR32) 2017; 111
S Gupta (7492_CR33) 2017; 64
RS Muller (7492_CR2) 2003
RM Imenabad (7492_CR6) 2017
A Shaker (7492_CR25) 2017; 64
YC Yeo (7492_CR35) 2002; 92
K-H Kao (7492_CR8) 2012; 59
7492_CR14
S Anand (7492_CR9) 2016; 97
D Kahng (7492_CR21) 1976; 23
H Lu (7492_CR27) 2014; 2
J Kretz (7492_CR30) 2004; 73–74
GE Moore (7492_CR19) 2006; 38
WY Choi (7492_CR5) 2007; 28
EO Kane (7492_CR22) 1961; 2
S Mookerjea (7492_CR18) 2009; 30
A Mallik (7492_CR1) 2012; 59
P Vanitha (7492_CR10) 2019; 99
Q Zhang (7492_CR4) 2006; 27
Navajeet Bagga (7492_CR12) 2017; 64
AM Ionescu (7492_CR15) 2011; 479
JG Koomey (7492_CR20) 2010; 33
WY Choi (7492_CR7) 2010; 57
S Anand (7492_CR13) 2018
C Sandow (7492_CR24) 2009; 53
DM Caughey (7492_CR29) 1967; 55
7492_CR23
C Lombardi (7492_CR28) 1988; 7
S Chander (7492_CR26) 2015; 36
L-Y Ma (7492_CR31) 2016; 22
References_xml – volume: 97
  start-page: 60
  year: 2016
  ident: 7492_CR9
  publication-title: Superlattices Microstruct.
  doi: 10.1016/j.spmi.2016.06.001
  contributor:
    fullname: S Anand
– volume: 64
  start-page: 3541
  year: 2017
  ident: 7492_CR25
  publication-title: Electron Devices
  doi: 10.1109/TED.2017.2724560
  contributor:
    fullname: A Shaker
– year: 2018
  ident: 7492_CR13
  publication-title: J. Electron. Mater.
  doi: 10.1007/s11664-018-6174-0
  contributor:
    fullname: S Anand
– volume: 92
  start-page: 7266
  year: 2002
  ident: 7492_CR35
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1521517
  contributor:
    fullname: YC Yeo
– volume: 64
  start-page: 2
  year: 2017
  ident: 7492_CR12
  publication-title: IEEE Trans. Electron Device
  doi: 10.1109/TED.2017.2769423
  contributor:
    fullname: Navajeet Bagga
– volume: 7
  start-page: 1164
  year: 1988
  ident: 7492_CR28
  publication-title: Comput. Des. Integr. Circ. Syst.
  contributor:
    fullname: C Lombardi
– volume: 107
  start-page: 8
  year: 2010
  ident: 7492_CR11
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.3386521
  contributor:
    fullname: M Luisier
– ident: 7492_CR23
– volume: 36
  start-page: 714
  year: 2015
  ident: 7492_CR26
  publication-title: IEEE Electron Device Lett.
  doi: 10.1109/LED.2015.2432061
  contributor:
    fullname: S Chander
– volume: 23
  start-page: 655
  year: 1976
  ident: 7492_CR21
  publication-title: Electron Devices
  doi: 10.1109/T-ED.1976.18468
  contributor:
    fullname: D Kahng
– volume: 60
  start-page: 10
  year: 2013
  ident: 7492_CR16
  publication-title: Electron Devices
  doi: 10.1109/TED.2013.2276888
  contributor:
    fullname: MJ Kumar
– volume: 73–74
  start-page: 803
  year: 2004
  ident: 7492_CR30
  publication-title: Microelectron. Eng.
  doi: 10.1016/S0167-9317(04)00224-2
  contributor:
    fullname: J Kretz
– volume: 92
  start-page: 60
  year: 2016
  ident: 7492_CR17
  publication-title: Superlattices Microstruct.
  doi: 10.1016/j.spmi.2016.02.027
  contributor:
    fullname: G Singh
– volume: 2
  start-page: 44
  year: 2014
  ident: 7492_CR27
  publication-title: IEEE J. Electron Devices Soc.
  doi: 10.1109/JEDS.2014.2326622
  contributor:
    fullname: H Lu
– year: 2017
  ident: 7492_CR6
  publication-title: J. Electron. Mater.
  doi: 10.1007/s11664-017-5823-z
  contributor:
    fullname: RM Imenabad
– volume: 64
  start-page: 4731
  year: 2017
  ident: 7492_CR33
  publication-title: Electron Devices
  doi: 10.1109/TED.2017.2754297
  contributor:
    fullname: S Gupta
– volume: 59
  start-page: 2
  year: 2012
  ident: 7492_CR8
  publication-title: Electron Device
  doi: 10.1109/TED.2012.2218514
  contributor:
    fullname: K-H Kao
– volume: 30
  start-page: 10
  year: 2009
  ident: 7492_CR18
  publication-title: IEEE Electron Device Lett.
  doi: 10.1109/LED.2009.2028907
  contributor:
    fullname: S Mookerjea
– start-page: 443
  volume-title: Device Electronics for Integrated Circuits
  year: 2003
  ident: 7492_CR2
  contributor:
    fullname: RS Muller
– volume: 99
  start-page: 34
  year: 2019
  ident: 7492_CR10
  publication-title: Electron. Commun.
  contributor:
    fullname: P Vanitha
– volume: 38
  start-page: 33
  year: 2006
  ident: 7492_CR19
  publication-title: IEEE Solid-State Circuits Soc. Newsl.
  doi: 10.1109/N-SSC.2006.4785860
  contributor:
    fullname: GE Moore
– volume: 2
  start-page: 1
  year: 1961
  ident: 7492_CR22
  publication-title: J. Appl. Phys.
  contributor:
    fullname: EO Kane
– volume: 53
  start-page: 1126
  year: 2009
  ident: 7492_CR24
  publication-title: Solid State Electron.
  doi: 10.1016/j.sse.2009.05.009
  contributor:
    fullname: C Sandow
– volume: 63
  start-page: 3213
  year: 2016
  ident: 7492_CR34
  publication-title: Electron Devices
  doi: 10.1109/TED.2016.2581842
  contributor:
    fullname: A Pal
– volume: 55
  start-page: 2192
  year: 1967
  ident: 7492_CR29
  publication-title: Proc. IEEE
  doi: 10.1109/PROC.1967.6123
  contributor:
    fullname: DM Caughey
– volume: 59
  start-page: 2
  year: 2012
  ident: 7492_CR1
  publication-title: Electron Devices
  doi: 10.1109/TED.2012.2218514
  contributor:
    fullname: A Mallik
– volume: 479
  start-page: 7373
  year: 2011
  ident: 7492_CR15
  publication-title: Nature
  doi: 10.1038/nature10679
  contributor:
    fullname: AM Ionescu
– volume: 22
  start-page: 537
  year: 2016
  ident: 7492_CR31
  publication-title: Microsyst. Technol.
  doi: 10.1007/s00542-015-2585-5
  contributor:
    fullname: L-Y Ma
– volume: 111
  start-page: 293
  year: 2017
  ident: 7492_CR32
  publication-title: Superlatt. Microstruct.
  doi: 10.1016/j.spmi.2017.06.036
  contributor:
    fullname: B Awadhiya
– volume: 93
  start-page: 19
  year: 2004
  ident: 7492_CR3
  publication-title: Phys. Rev. Lett.
  doi: 10.1103/PhysRevLett.93.196805
  contributor:
    fullname: J Appenzeller
– volume: 33
  start-page: 46
  year: 2010
  ident: 7492_CR20
  publication-title: Hist. Comput.
  doi: 10.1109/MAHC.2010.28
  contributor:
    fullname: JG Koomey
– volume: 28
  start-page: 8
  year: 2007
  ident: 7492_CR5
  publication-title: IEEE Electron Device Lett.
  doi: 10.1109/LED.2007.892366
  contributor:
    fullname: WY Choi
– volume: 27
  start-page: 4
  year: 2006
  ident: 7492_CR4
  publication-title: Electron Devices
  doi: 10.1109/LED.2005.860381
  contributor:
    fullname: Q Zhang
– ident: 7492_CR14
– volume: 57
  start-page: 9
  year: 2010
  ident: 7492_CR7
  publication-title: Electron Devices
  contributor:
    fullname: WY Choi
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Snippet An improved subthreshold analytical model of Germanium source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET Ge(SRC)-DH-DD-TM-SG-TFET is...
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SubjectTerms Characterization and Evaluation of Materials
Chemistry and Materials Science
CMOS
Computer simulation
Dielectrics
Electronics and Microelectronics
Field effect transistors
Germanium
Hafnium oxide
Instrumentation
Materials Science
Mathematical models
Optical and Electronic Materials
Semiconductor devices
Silicon
Silicon devices
Solid State Physics
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Title Subthreshold Performance Analysis of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel Field Effect Transistor for Ultra Low Power Applications
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