Two-dimensional analytical modeling of the surface potential and drain current of a double-gate vertical t-shaped tunnel field-effect transistor - Singh, Shailendra; Raj, Balwinder (Journal of computational electronics, 2020)
Keywords: Approximation; Bias; Boundary conditions; CAD; Computer aided design; Electric fields; Electrical Engineering; Electrons; Engineering; Field effect transistors; Integrated circuits; Interfaces; Mathematical and Computational Engineering; Mathematical and Computational Physics; Mechanical Engineering; Modelling; Optical and Electronic Materials; Poisson equation; Semiconductor devices; Silicon; Simulation; Theoretical; Tunnels; Two dimensional analysis; Two dimensional models; Work functions; Band-two-band tunneling (B2BT); Double-gate vertical t-shaped TFET (DG V t-TFET); Poisson’s equation; Subthreshold swing (SS); Analytical modeling; Parabolic approximation; Surface potential