APA (7th ed.) Citation

Singh, S., & Raj, B. (2020). Two-dimensional analytical modeling of the surface potential and drain current of a double-gate vertical t-shaped tunnel field-effect transistor. Journal of computational electronics, 19(3), 1154-1163. https://doi.org/10.1007/s10825-020-01496-4

Chicago Style (17th ed.) Citation

Singh, Shailendra, and Balwinder Raj. "Two-dimensional Analytical Modeling of the Surface Potential and Drain Current of a Double-gate Vertical T-shaped Tunnel Field-effect Transistor." Journal of Computational Electronics 19, no. 3 (2020): 1154-1163. https://doi.org/10.1007/s10825-020-01496-4.

MLA (9th ed.) Citation

Singh, Shailendra, and Balwinder Raj. "Two-dimensional Analytical Modeling of the Surface Potential and Drain Current of a Double-gate Vertical T-shaped Tunnel Field-effect Transistor." Journal of Computational Electronics, vol. 19, no. 3, 2020, pp. 1154-1163, https://doi.org/10.1007/s10825-020-01496-4.