Nb2SiTe4 and Nb2GeTe4: Unexplored 2D Ternary Layered Tellurides with High Stability, Narrow Band Gap and High Electron Mobility

• Published in: Journal of electronic materials Vol. 49; no. 2; pp. 959 - 968
• Main Authors: Fang, Wen-Yu, Li, Ping-An, Yuan, Jun-Hui, Xue, Kan-Hao, Wang, Jia-Fu
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.02.2020; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Crystal structure; Dimensional stability; Dynamic stability; Electromagnetic absorption; Electron mobility; Electronics and Microelectronics; Electrons; Energy; Energy gap; Information storage; Instrumentation; Light; Materials Science; Mechanical properties; Metals; Monolayers; Nanoelectronics; Optical and Electronic Materials; Optoelectronics; Poisson's ratio; Semiconductors; Solid State Physics; Symmetry; Tellurides; SiTe; mobility; electronic properties; 2D materials; monolayer Nb; density functional theory; GeTe; layered telluride; and Nb

Recently, two-dimensional (2D) ternary layered telluride materials have attracted enormous attention due to their exotic electronic properties. Here, we propose two new monolayer 2D semiconductors Nb 2 SiTe 4 and Nb 2 GeTe 4 , which show high dynamic, thermodynamic and mechanical stability. Nb 2 SiT...