Nb2SiTe4 and Nb2GeTe4: Unexplored 2D Ternary Layered Tellurides with High Stability, Narrow Band Gap and High Electron Mobility - Fang, Wen-Yu; Li, Ping-An; Yuan, Jun-Hui; Xue, Kan-Hao; Wang, Jia-Fu (Journal of electronic materials, 2020)
Keywords: Characterization and Evaluation of Materials; Chemistry and Materials Science; Crystal structure; Dimensional stability; Dynamic stability; Electromagnetic absorption; Electron mobility; Electronics and Microelectronics; Electrons; Energy; Energy gap; Information storage; Instrumentation; Light; Materials Science; Mechanical properties; Metals; Monolayers; Nanoelectronics; Optical and Electronic Materials; Optoelectronics; Poisson's ratio; Semiconductors; Solid State Physics; Symmetry; Tellurides; SiTe; mobility; electronic properties; 2D materials; monolayer Nb; density functional theory; GeTe; layered telluride; and Nb