More physical understanding of current characteristics of tunneling field-effect transistor leveraged by gate positions and properties through dual-gate and gate-all-around structuring

• Published in: Applied physics. A, Materials science & processing Vol. 126; no. 11
• Main Authors: Ansari, Md. Hasan Raza, Cho, Seongjae, Park, Byung-Gook
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.11.2020; Springer Nature B.V
• Subjects: Applied physics; Characterization and Evaluation of Materials; Condensed Matter Physics; Controllability; Electrical junctions; Field effect transistors; Machines; Manufacturing; Materials science; Nanotechnology; Optical and Electronic Materials; Physics; Physics and Astronomy; Processes; Semiconductor devices; Stability; Surfaces and Interfaces; Thin Films; Threshold voltage; Transistors; Gate-all-around channel; Dual-gate structure; Nanoscale transistor design; Low-power operation; Tunneling field-effect transistor; Gate controllability

In this work, a tunneling field-effect transistor (TFET) in the structure that can maximize the electrostatic effects in determining its electrical performances is optimally designed and characterized. The featured device structure includes gate-all-around (GAA) channel and dual gates (DuGs) identif...