Dielectric properties of hafnium oxide film prepared by HiPIMS at different O2/Ar ratios and their influences on TFT performance
High-k hafnium oxide (HfO2) film was prepared by high power impulse magnetron sputtering (HiPIMS). The influences of oxygen supply on the plasma state, film properties and TFT performance were investigated. The films are near-stoichiometric and preferentially (−1 1 1)-orientated. When the oxygen sup...
Saved in:
Published in | Journal of science. Advanced materials and devices Vol. 9; no. 2; p. 100722 |
---|---|
Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.06.2024
Elsevier |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | High-k hafnium oxide (HfO2) film was prepared by high power impulse magnetron sputtering (HiPIMS). The influences of oxygen supply on the plasma state, film properties and TFT performance were investigated. The films are near-stoichiometric and preferentially (−1 1 1)-orientated. When the oxygen supply increased from 1% to 3%, the excitation/ionization rate of the plasma species increased, leading to higher crystallinity, higher density, and lower oxygen vacancy defect concentration of the film, therefore improving the dielectric properties of the film. When the oxygen supply further increased to 5%, the excitation/ionization rate decreased, thereby leading to lower crystallinity, lower density, and higher oxygen vacancy defect concentration of the film, therefore deteriorating the dielectric properties of the film. The film deposited at 3% oxygen supply exhibited the best dielectric properties with the highest k value of 24 and the highest breakdown-electric field (4.7 MV/cm), which should be attributed to the high crystallinity, high density and low oxygen vacancy defect concentration of the film. Finally, transparent thin film transistors (TFTs) with ITO gate electrode, HfO2 gate dielectric layer and indium-gallium-zinc oxide channel were fabricated on flexible colorless polyimide substrate at full room temperature by all HiPIMS process. The fixed positive charges and k value of HfO2 film have significant effects on the TFT performance. The best TFT exhibited good electrical performance, featuring a remarkably low subthreshold swing of 0.13 V/decade. It also exhibited fair stability against bending and gate bias stress. |
---|---|
AbstractList | High-k hafnium oxide (HfO2) film was prepared by high power impulse magnetron sputtering (HiPIMS). The influences of oxygen supply on the plasma state, film properties and TFT performance were investigated. The films are near-stoichiometric and preferentially (−1 1 1)-orientated. When the oxygen supply increased from 1% to 3%, the excitation/ionization rate of the plasma species increased, leading to higher crystallinity, higher density, and lower oxygen vacancy defect concentration of the film, therefore improving the dielectric properties of the film. When the oxygen supply further increased to 5%, the excitation/ionization rate decreased, thereby leading to lower crystallinity, lower density, and higher oxygen vacancy defect concentration of the film, therefore deteriorating the dielectric properties of the film. The film deposited at 3% oxygen supply exhibited the best dielectric properties with the highest k value of 24 and the highest breakdown-electric field (4.7 MV/cm), which should be attributed to the high crystallinity, high density and low oxygen vacancy defect concentration of the film. Finally, transparent thin film transistors (TFTs) with ITO gate electrode, HfO2 gate dielectric layer and indium-gallium-zinc oxide channel were fabricated on flexible colorless polyimide substrate at full room temperature by all HiPIMS process. The fixed positive charges and k value of HfO2 film have significant effects on the TFT performance. The best TFT exhibited good electrical performance, featuring a remarkably low subthreshold swing of 0.13 V/decade. It also exhibited fair stability against bending and gate bias stress. |
ArticleNumber | 100722 |
Author | Li, Hai-Cheng Wu, Wan-Yu Zhu, Wen-Zhang Wang, Yao-Tian Xu, Hua Zhao, Ming-Jie Yan, Jia-Hao Lien, Shui-Yang Lai, Feng-Min Wuu, Dong-Sing |
Author_xml | – sequence: 1 givenname: Ming-Jie surname: Zhao fullname: Zhao, Ming-Jie organization: Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian, 361024, China – sequence: 2 givenname: Yao-Tian surname: Wang fullname: Wang, Yao-Tian organization: Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian, 361024, China – sequence: 3 givenname: Jia-Hao surname: Yan fullname: Yan, Jia-Hao organization: Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian, 361024, China – sequence: 4 givenname: Hai-Cheng surname: Li fullname: Li, Hai-Cheng organization: Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian, 361024, China – sequence: 5 givenname: Hua surname: Xu fullname: Xu, Hua organization: Guangzhou New Vision Opto-electronic Technology CO., Ltd, Guangzhou, 510640, China – sequence: 6 givenname: Dong-Sing surname: Wuu fullname: Wuu, Dong-Sing organization: Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou, 54561, Taiwan – sequence: 7 givenname: Wan-Yu surname: Wu fullname: Wu, Wan-Yu organization: Department of Materials Science and Engineering, National United University, Miaoli, 360302, Taiwan – sequence: 8 givenname: Feng-Min surname: Lai fullname: Lai, Feng-Min organization: Department of Biomedical Engineering, Da-Yeh University, Changhua, 51591, Taiwan – sequence: 9 givenname: Shui-Yang orcidid: 0000-0002-3289-9538 surname: Lien fullname: Lien, Shui-Yang email: sylien@xmut.edu.cn organization: Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian, 361024, China – sequence: 10 givenname: Wen-Zhang surname: Zhu fullname: Zhu, Wen-Zhang organization: Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian, 361024, China |
BookMark | eNp9kU1LJDEQhsOioKv-Ai_5AzPmqz9y8CC6rgOKguM5VCeVNU13Z0haWW_-9M04snjylOKl3idV9f4ke1OckJBTzpac8fqsX_YZRrcUTKiisEaIH-RQqLpdCN7ovS_1ATnJuWeMCc5bValD8n4VcEA7p2DpJsUNpjlgptHTZ_BTeBlp_BscUh-GsTTgBhI62r3Rm_CwunukMFMXvMeE00zvxdlFognmEDOFydH5GUOiYfLDC052y53o-npNyzc-phGKdkz2PQwZTz7fI_J0_Wt9ebO4vf-9ury4XVjJ9bxoWobK66YVTCsLkrFOs6pG7W2lnHZ1ZW0HUuq2qgB4C8IL2ZQ-JQVzQskjstpxXYTebFIYIb2ZCMF8CDH9MVB2twMaXvO21tZbVnWqlQqUZqC8h5pLqTpdWHLHsinmnND_53FmtpmY3nxkYraZmF0mxXW-c2FZ8zVgMtmG7VlcSCWBMkf41v8Pw66W7Q |
Cites_doi | 10.1016/j.apsusc.2013.12.153 10.3390/nano12213890 10.1063/1.4953262 10.1103/PhysRev.56.978 10.1039/C7TC04970F 10.1088/0268-1242/29/12/125014 10.1016/j.ceramint.2015.07.099 10.1016/j.mssp.2022.106527 10.1116/6.0000053 10.1016/j.actamat.2022.118220 10.1016/j.ceramint.2021.07.065 10.1016/j.tsf.2016.10.059 10.1088/0963-0252/24/3/035015 10.3938/jkps.54.1048 10.12693/APhysPolA.136.873 10.1016/j.surfcoat.2010.08.116 10.1016/j.solmat.2023.112384 10.3390/cryst10020136 10.1002/admi.202300083 10.1103/PhysRevB.102.014106 10.1063/1.5022088 10.3390/nano12121995 10.1016/j.vacuum.2022.111640 10.1088/1468-6996/11/4/044305 10.1016/j.surfcoat.2022.128215 10.1016/j.vacuum.2022.111034 10.1109/TED.2021.3095135 10.3390/app11104393 10.1002/sia.6902 10.1016/j.apsusc.2016.01.017 10.1016/j.matchemphys.2022.126875 10.1016/j.vacuum.2021.110762 10.1002/pssb.19660150224 10.1109/TED.2016.2612690 10.1007/s40820-022-00929-y 10.1016/j.ceramint.2022.08.054 10.1063/1.4866257 10.1039/c2tc00481j |
ContentType | Journal Article |
Copyright | 2024 Vietnam National University, Hanoi |
Copyright_xml | – notice: 2024 Vietnam National University, Hanoi |
DBID | 6I. AAFTH AAYXX CITATION DOA |
DOI | 10.1016/j.jsamd.2024.100722 |
DatabaseName | ScienceDirect Open Access Titles Elsevier:ScienceDirect:Open Access CrossRef Directory of Open Access Journals |
DatabaseTitle | CrossRef |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: DOA name: DOAJ Directory of Open Access Journals url: https://www.doaj.org/ sourceTypes: Open Website |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 2468-2179 |
ExternalDocumentID | oai_doaj_org_article_161869cfc05b4834a490a4ffa61334b9 10_1016_j_jsamd_2024_100722 S2468217924000534 |
GroupedDBID | 0R~ 0SF 6I. AACTN AAEDW AAFTH AALRI AAXUO ABMAC ACGFS ADBBV AEXQZ AFTJW AITUG ALMA_UNASSIGNED_HOLDINGS AMRAJ BCNDV EBS EJD FDB GROUPED_DOAJ IPNFZ KQ8 M41 NCXOZ O9- OK1 RIG ROL SSZ AAYXX ADVLN AFJKZ CITATION |
ID | FETCH-LOGICAL-c319t-780e4f9782094ca300b9056e9fc54d9d65ccba339855aa18a2f237a304320d243 |
IEDL.DBID | DOA |
ISSN | 2468-2179 |
IngestDate | Fri Oct 04 13:01:58 EDT 2024 Thu Sep 26 15:26:41 EDT 2024 Tue Jun 18 08:51:02 EDT 2024 |
IsDoiOpenAccess | true |
IsOpenAccess | true |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 2 |
Keywords | Flexible thin film transistor (TFT) Hafnium oxide Oxide semiconductor High power impulse magnetron sputtering Room-temperature-fabrication |
Language | English |
License | This is an open access article under the CC BY-NC-ND license. |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c319t-780e4f9782094ca300b9056e9fc54d9d65ccba339855aa18a2f237a304320d243 |
ORCID | 0000-0002-3289-9538 |
OpenAccessLink | https://doaj.org/article/161869cfc05b4834a490a4ffa61334b9 |
ParticipantIDs | doaj_primary_oai_doaj_org_article_161869cfc05b4834a490a4ffa61334b9 crossref_primary_10_1016_j_jsamd_2024_100722 elsevier_sciencedirect_doi_10_1016_j_jsamd_2024_100722 |
PublicationCentury | 2000 |
PublicationDate | June 2024 2024-06-00 2024-06-01 |
PublicationDateYYYYMMDD | 2024-06-01 |
PublicationDate_xml | – month: 06 year: 2024 text: June 2024 |
PublicationDecade | 2020 |
PublicationTitle | Journal of science. Advanced materials and devices |
PublicationYear | 2024 |
Publisher | Elsevier B.V Elsevier |
Publisher_xml | – name: Elsevier B.V – name: Elsevier |
References | Ganesan, Murdoch, Treverrow, Ross, Falconer, Kondyurin, McCulloch, Partridge, McKenzie, Bilek (bib12) 2015; 24 Baek, Choi, Kim, Cheon, Byun, Jeon, Park (bib35) 2021; 47 Jaszewski, Hoglund, Costine, Weber, Fields, Sales, Vaidya, Bellcase, Loughlin, Salanova, Dickie, Wolfley, Henry, Maria, Jones, Shukla, McDonnell, Reinke, Hopkins, Howe, Ihlefeld (bib14) 2022; 239 Zhang, Han, Wang, Ruan, Wu, Wuu, Zuo, Lai, Lien, Zhu (bib28) 2023; 257 Deng, Lan, He, Li, Li, Chen, Peng (bib2) 2021; 68 Wu, Lan, He, Lin, Deng, Chen, Peng (bib7) 2021; 11 Pi, Zhang, Jiang, Belosludtsev, Vlček, Houška, Meletis (bib15) 2016; 619 Zhao, Chen, Shi, Chen, Xu, Wu, Wuu, Lien, Zhu (bib19) 2023; 207 Yoo, Park, Lee, Lee, Song, Lee, Baik (bib33) 2013; 1 Kamiya, Nomura, Hosono (bib1) 2010; 11 Kol, Oral (bib6) 2019; 136 Yao, Zheng, Xiong, Zhang, Li, Ning, Fang, Xie, Lu, Peng (bib5) 2018; 112 Yao, Zheng, Fang, Zhang, Zhang, Ning, Wang, Peng, Xie, Lu (bib11) 2018; 6 Vargas, Murphy, Ramana (bib23) 2014; 104 Zhao, Zhang, Huang, Huang, Wu, Tseng, Huang, Kuo, Lien, Zhu (bib16) 2022; 200 Murdoch, McCulloch, Partridge (bib31) 2014; 29 Zhang, Han, Peng, Ruan, Wu, Wuu, Huang, Lien, Zhu (bib37) 2022; 12 Choudhury, Mandia, Langeslay, Yanguas-Gil, Letourneau, Sattelberger, Balasubramanium, Mane, Delferro, Elam (bib34) 2020; 38 Morkoc, Kahraman, Yilmaz (bib36) 2022; 292 Kong, Cho, Lee, Lee, Lim, Kim (bib39) 2022; 143 Zenkin, Belosludtsev, Kos, Čerstvý, Haviar, Netrvalová (bib13) 2016; 108 Sheng, Jeong, Han, Hong, Park (bib3) 2017; 18 Strand, Cottom, Larcher, Shluger (bib38) 2020; 102 Zhao, Zhang, Huang, Wu, Tseng, Lien, Zhu (bib17) 2022; 196 Bhanu (bib9) 2021; 265 Zhang, Chen, Zhang, Ruan, Xie, Wu, Wuu, Lien, Zhu (bib20) 2022; 48 Song, Lan, Xiao, Lin, Sun, Li, Song, Gao, Zhang, Wu, Peng (bib4) 2016; 63 Zhang, Vasiljevic, Bergne, Park, Insinga, Yun, Esposito, Pryds (bib30) 2023; 10 Dave, Gupta, Chandra (bib27) 2014; 295 Joo, Rossnagel (bib24) 2009; 54 Venkataiah, Chandra, Chalapathi, Ramana, Uthanna (bib10) 2021; 53 Liu, Liu, Yan, Tan, Tian (bib25) 2010; 205 Xiao, Kisslinger, Chance, Banks (bib29) 2020; 10 Shi, Aziz, Ciou, Wang, Gao, Xiong, Lee (bib40) 2022; 14 Ganesan, Murdoch, Partridge, Bathgate, Treverrow, Dong, Ross, McCulloch, McKenzie, Bilek (bib32) 2016; 365 Zhao, Huang, Zhang, Hsu, Wu, Huang, Wei, Lien, Zhu (bib21) 2022; 434 Zhao, Zhang, Huang, Chen, Xie, Wu, Huang, Wuu, Lien, Zhu (bib18) 2022; 12 Zhang, Liu, Liu, Shin, Shan (bib8) 2015; 41 Tauc, Grigorovici, Vancu (bib22) 1966; 15 Patterson (bib26) 1939; 56 Yoo (10.1016/j.jsamd.2024.100722_bib33) 2013; 1 Deng (10.1016/j.jsamd.2024.100722_bib2) 2021; 68 Song (10.1016/j.jsamd.2024.100722_bib4) 2016; 63 Zhang (10.1016/j.jsamd.2024.100722_bib8) 2015; 41 Baek (10.1016/j.jsamd.2024.100722_bib35) 2021; 47 Liu (10.1016/j.jsamd.2024.100722_bib25) 2010; 205 Zhao (10.1016/j.jsamd.2024.100722_bib18) 2022; 12 Zhang (10.1016/j.jsamd.2024.100722_bib30) 2023; 10 Kamiya (10.1016/j.jsamd.2024.100722_bib1) 2010; 11 Yao (10.1016/j.jsamd.2024.100722_bib11) 2018; 6 Tauc (10.1016/j.jsamd.2024.100722_bib22) 1966; 15 Kol (10.1016/j.jsamd.2024.100722_bib6) 2019; 136 Murdoch (10.1016/j.jsamd.2024.100722_bib31) 2014; 29 Zenkin (10.1016/j.jsamd.2024.100722_bib13) 2016; 108 Zhang (10.1016/j.jsamd.2024.100722_bib20) 2022; 48 Zhao (10.1016/j.jsamd.2024.100722_bib17) 2022; 196 Patterson (10.1016/j.jsamd.2024.100722_bib26) 1939; 56 Bhanu (10.1016/j.jsamd.2024.100722_bib9) 2021; 265 Joo (10.1016/j.jsamd.2024.100722_bib24) 2009; 54 Sheng (10.1016/j.jsamd.2024.100722_bib3) 2017; 18 Choudhury (10.1016/j.jsamd.2024.100722_bib34) 2020; 38 Pi (10.1016/j.jsamd.2024.100722_bib15) 2016; 619 Venkataiah (10.1016/j.jsamd.2024.100722_bib10) 2021; 53 Dave (10.1016/j.jsamd.2024.100722_bib27) 2014; 295 Zhao (10.1016/j.jsamd.2024.100722_bib16) 2022; 200 Zhang (10.1016/j.jsamd.2024.100722_bib37) 2022; 12 Strand (10.1016/j.jsamd.2024.100722_bib38) 2020; 102 Jaszewski (10.1016/j.jsamd.2024.100722_bib14) 2022; 239 Ganesan (10.1016/j.jsamd.2024.100722_bib32) 2016; 365 Kong (10.1016/j.jsamd.2024.100722_bib39) 2022; 143 Yao (10.1016/j.jsamd.2024.100722_bib5) 2018; 112 Ganesan (10.1016/j.jsamd.2024.100722_bib12) 2015; 24 Shi (10.1016/j.jsamd.2024.100722_bib40) 2022; 14 Zhao (10.1016/j.jsamd.2024.100722_bib21) 2022; 434 Zhang (10.1016/j.jsamd.2024.100722_bib28) 2023; 257 Wu (10.1016/j.jsamd.2024.100722_bib7) 2021; 11 Xiao (10.1016/j.jsamd.2024.100722_bib29) 2020; 10 Zhao (10.1016/j.jsamd.2024.100722_bib19) 2023; 207 Vargas (10.1016/j.jsamd.2024.100722_bib23) 2014; 104 Morkoc (10.1016/j.jsamd.2024.100722_bib36) 2022; 292 |
References_xml | – volume: 295 start-page: 231 year: 2014 end-page: 239 ident: bib27 article-title: Nanostructured hydrophobic DC sputtered inorganic oxide coating for outdoor glass insulators publication-title: Appl. Surf. Sci. contributor: fullname: Chandra – volume: 68 start-page: 4450 year: 2021 end-page: 4454 ident: bib2 article-title: Effect of bandgap widening on negative-bias illumination stress stability of oxide thin-film transistors publication-title: IEEE Trans. Electron. Dev. contributor: fullname: Peng – volume: 196 year: 2022 ident: bib17 article-title: Effect of working pressure on Sn/In composition and optoelectronic properties of ITO films prepared by high power impulse magnetron sputtering publication-title: Vacuum contributor: fullname: Zhu – volume: 10 start-page: 136 year: 2020 ident: bib29 article-title: Comparison of hafnium dioxide and zirconium dioxide grown by plasma-enhanced atomic layer deposition for the application of electronic materials publication-title: Crystals contributor: fullname: Banks – volume: 47 start-page: 29030 year: 2021 end-page: 29035 ident: bib35 article-title: Plasma-enhanced atomic layer deposited HfO2 films using a novel heteroleptic cyclopentadienyl-based Hf precursor publication-title: Ceram. Int. contributor: fullname: Park – volume: 63 start-page: 4315 year: 2016 end-page: 4319 ident: bib4 article-title: High-mobility and good-stability thin-film transistors with scandium-substituted indium oxide semiconductors publication-title: IEEE Trans. Electron. Dev. contributor: fullname: Peng – volume: 29 year: 2014 ident: bib31 article-title: Structural and dielectric properties of energetically deposited hafnium oxide films publication-title: Semicond. Sci. Technol. contributor: fullname: Partridge – volume: 18 start-page: 159 year: 2017 end-page: 172 ident: bib3 article-title: Review of recent advances in flexible oxide semiconductor thin-film transistors publication-title: J. Infect. Dis. contributor: fullname: Park – volume: 48 start-page: 34668 year: 2022 end-page: 34677 ident: bib20 article-title: Modulation of the conductive behavior of NiO thin film deposited by HiPIMS through varying the O2 flow ratio publication-title: Ceram. Int. contributor: fullname: Zhu – volume: 265 start-page: 114999 year: 2021 ident: bib9 article-title: Conduction mechanisms responsible for leakage currents in RF sputtered HfO2 high-κ gate-oxide thin film MOS capacitors publication-title: Mater. Sci. contributor: fullname: Bhanu – volume: 292 year: 2022 ident: bib36 article-title: Post-deposition annealing effect on the structural and electrical properties of Ytterbium oxide as an alternative gate dielectric publication-title: Mater. Chem. Phys. contributor: fullname: Yilmaz – volume: 108 year: 2016 ident: bib13 article-title: Thickness dependent wetting properties and surface free energy of HfO2 thin films publication-title: Appl. Phys. Lett. contributor: fullname: Netrvalová – volume: 239 year: 2022 ident: bib14 article-title: Impact of oxygen content on phase constitution and ferroelectric behavior of hafnium oxide thin films deposited by reactive high-power impulse magnetron sputtering publication-title: Acta Mater. contributor: fullname: Ihlefeld – volume: 1 start-page: 1651 year: 2013 end-page: 1658 ident: bib33 article-title: Solution-processed high-k HfO2 gate dielectric processed under softening temperature of polymer substrates publication-title: J. Mater. Chem. C contributor: fullname: Baik – volume: 54 start-page: 1048 year: 2009 end-page: 1053 ident: bib24 article-title: Plasma modeling of a PEALD system for the deposition of TiO2 and HfO2 publication-title: J. Kor. Phys. Soc. contributor: fullname: Rossnagel – volume: 112 year: 2018 ident: bib5 article-title: Low-temperature fabrication of sputtered high- publication-title: Appl. Phys. Lett. contributor: fullname: Peng – volume: 365 start-page: 336 year: 2016 end-page: 341 ident: bib32 article-title: Optimizing HiPIMS pressure for deposition of high-k (k=18.3) amorphous HfO2 publication-title: Appl. Surf. Sci. contributor: fullname: Bilek – volume: 6 start-page: 2522 year: 2018 end-page: 2532 ident: bib11 article-title: High-performance flexible oxide TFTs: optimization of a-IGZO film by modulating the voltage waveform of pulse DC magnetron sputtering without post treatment publication-title: J. Mater. Chem. C contributor: fullname: Lu – volume: 38 year: 2020 ident: bib34 article-title: Atomic layer deposition of HfO2 films using carbon-free tetrakis(tetrahydroborato)hafnium and water publication-title: J. Vac. Sci. Technol. Vac. Surf. Films contributor: fullname: Elam – volume: 53 start-page: 206 year: 2021 end-page: 214 ident: bib10 article-title: Oxygen partial pressure influenced stoichiometry, structural, electrical, and optical properties of DC reactive sputtered hafnium oxide films publication-title: Surf. Interface Anal. contributor: fullname: Uthanna – volume: 104 year: 2014 ident: bib23 article-title: Tailoring the index of refraction of nanocrystalline hafnium oxide thin films publication-title: Appl. Phys. Lett. contributor: fullname: Ramana – volume: 41 start-page: 13218 year: 2015 end-page: 13223 ident: bib8 article-title: Solution-processed hafnium oxide dielectric thin films for thin-film transistors applications publication-title: Ceram. Int. contributor: fullname: Shan – volume: 11 year: 2010 ident: bib1 article-title: Present status of amorphous In–Ga–Zn–O thin-film transistors publication-title: Sci. Technol. Adv. Mater. contributor: fullname: Hosono – volume: 257 year: 2023 ident: bib28 article-title: Effect on passivation mechanism and properties of HfO2/crystalline-Si interface under different annealing atmosphere publication-title: Sol. Energy Mater. Sol. Cells contributor: fullname: Zhu – volume: 12 start-page: 3890 year: 2022 ident: bib37 article-title: Crystallinity effect on electrical properties of PEALD–HfO2 thin films prepared by different substrate temperatures publication-title: Nanomaterials contributor: fullname: Zhu – volume: 10 year: 2023 ident: bib30 article-title: Engineering of electromechanical oxides by symmetry breaking publication-title: Adv. Mater. Interfac. contributor: fullname: Pryds – volume: 24 year: 2015 ident: bib12 article-title: The role of pulse length in target poisoning during reactive HiPIMS: application to amorphous HfO2 publication-title: Plasma Sources Sci. Technol. contributor: fullname: Bilek – volume: 136 start-page: 873 year: 2019 end-page: 881 ident: bib6 article-title: Hf-based high-κ dielectrics: a review publication-title: Acta Phys. Pol. contributor: fullname: Oral – volume: 15 start-page: 627 year: 1966 end-page: 637 ident: bib22 article-title: Optical properties and electronic structure of amorphous germanium publication-title: Phys. Status Solidi B contributor: fullname: Vancu – volume: 56 start-page: 978 year: 1939 end-page: 982 ident: bib26 article-title: The scherrer formula for X-ray particle size determination publication-title: Phys. Rev. contributor: fullname: Patterson – volume: 143 year: 2022 ident: bib39 article-title: Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics publication-title: Mater. Sci. Semicond. Process. contributor: fullname: Kim – volume: 207 year: 2023 ident: bib19 article-title: Modulation of carrier density in indium–gallium–zinc-oxide thin film prepared by high-power impulse magnetron sputtering publication-title: Vacuum contributor: fullname: Zhu – volume: 434 year: 2022 ident: bib21 article-title: Effect of oxygen flow rate ratio on crystalline phase and properties of copper oxide films prepared by room-temperature high-power impulse magnetron sputtering publication-title: Surf. Coat. Technol. contributor: fullname: Zhu – volume: 102 year: 2020 ident: bib38 article-title: Effect of electric field on defect generation and migration in HfO 2 publication-title: Phys. Rev. B contributor: fullname: Shluger – volume: 14 start-page: 195 year: 2022 ident: bib40 article-title: Al2O3/HfO2 nanolaminate dielectric boosting IGZO-based flexible thin-film transistors publication-title: Nano-Micro Lett. contributor: fullname: Lee – volume: 619 start-page: 239 year: 2016 end-page: 249 ident: bib15 article-title: Microstructure of hard and optically transparent HfO2 films prepared by high-power impulse magnetron sputtering with a pulsed oxygen flow control publication-title: Thin Solid Films contributor: fullname: Meletis – volume: 200 year: 2022 ident: bib16 article-title: Effect of power density on compositional and structural evolution of ITO thin film by HiPIMS method publication-title: Vacuum contributor: fullname: Zhu – volume: 11 start-page: 4393 year: 2021 ident: bib7 article-title: Influence of hydrogen ions on the performance of thin-film transistors with solution-processed AlOx gate dielectrics publication-title: Appl. Sci. contributor: fullname: Peng – volume: 205 start-page: 2120 year: 2010 end-page: 2125 ident: bib25 article-title: Influence of O2/Ar flow ratio on the structure and optical properties of sputtered hafnium dioxide thin films publication-title: Surf. Coat. Technol. contributor: fullname: Tian – volume: 12 start-page: 1995 year: 2022 ident: bib18 article-title: Role of ambient hydrogen in HiPIMS-ITO film during annealing process in a large temperature range publication-title: Nanomaterials contributor: fullname: Zhu – volume: 18 start-page: 159 year: 2017 ident: 10.1016/j.jsamd.2024.100722_bib3 article-title: Review of recent advances in flexible oxide semiconductor thin-film transistors publication-title: J. Infect. Dis. contributor: fullname: Sheng – volume: 295 start-page: 231 year: 2014 ident: 10.1016/j.jsamd.2024.100722_bib27 article-title: Nanostructured hydrophobic DC sputtered inorganic oxide coating for outdoor glass insulators publication-title: Appl. Surf. Sci. doi: 10.1016/j.apsusc.2013.12.153 contributor: fullname: Dave – volume: 12 start-page: 3890 year: 2022 ident: 10.1016/j.jsamd.2024.100722_bib37 article-title: Crystallinity effect on electrical properties of PEALD–HfO2 thin films prepared by different substrate temperatures publication-title: Nanomaterials doi: 10.3390/nano12213890 contributor: fullname: Zhang – volume: 108 year: 2016 ident: 10.1016/j.jsamd.2024.100722_bib13 article-title: Thickness dependent wetting properties and surface free energy of HfO2 thin films publication-title: Appl. Phys. Lett. doi: 10.1063/1.4953262 contributor: fullname: Zenkin – volume: 56 start-page: 978 year: 1939 ident: 10.1016/j.jsamd.2024.100722_bib26 article-title: The scherrer formula for X-ray particle size determination publication-title: Phys. Rev. doi: 10.1103/PhysRev.56.978 contributor: fullname: Patterson – volume: 6 start-page: 2522 year: 2018 ident: 10.1016/j.jsamd.2024.100722_bib11 article-title: High-performance flexible oxide TFTs: optimization of a-IGZO film by modulating the voltage waveform of pulse DC magnetron sputtering without post treatment publication-title: J. Mater. Chem. C doi: 10.1039/C7TC04970F contributor: fullname: Yao – volume: 29 year: 2014 ident: 10.1016/j.jsamd.2024.100722_bib31 article-title: Structural and dielectric properties of energetically deposited hafnium oxide films publication-title: Semicond. Sci. Technol. doi: 10.1088/0268-1242/29/12/125014 contributor: fullname: Murdoch – volume: 41 start-page: 13218 year: 2015 ident: 10.1016/j.jsamd.2024.100722_bib8 article-title: Solution-processed hafnium oxide dielectric thin films for thin-film transistors applications publication-title: Ceram. Int. doi: 10.1016/j.ceramint.2015.07.099 contributor: fullname: Zhang – volume: 143 year: 2022 ident: 10.1016/j.jsamd.2024.100722_bib39 article-title: Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics publication-title: Mater. Sci. Semicond. Process. doi: 10.1016/j.mssp.2022.106527 contributor: fullname: Kong – volume: 38 year: 2020 ident: 10.1016/j.jsamd.2024.100722_bib34 article-title: Atomic layer deposition of HfO2 films using carbon-free tetrakis(tetrahydroborato)hafnium and water publication-title: J. Vac. Sci. Technol. Vac. Surf. Films doi: 10.1116/6.0000053 contributor: fullname: Choudhury – volume: 239 year: 2022 ident: 10.1016/j.jsamd.2024.100722_bib14 article-title: Impact of oxygen content on phase constitution and ferroelectric behavior of hafnium oxide thin films deposited by reactive high-power impulse magnetron sputtering publication-title: Acta Mater. doi: 10.1016/j.actamat.2022.118220 contributor: fullname: Jaszewski – volume: 47 start-page: 29030 year: 2021 ident: 10.1016/j.jsamd.2024.100722_bib35 article-title: Plasma-enhanced atomic layer deposited HfO2 films using a novel heteroleptic cyclopentadienyl-based Hf precursor publication-title: Ceram. Int. doi: 10.1016/j.ceramint.2021.07.065 contributor: fullname: Baek – volume: 619 start-page: 239 year: 2016 ident: 10.1016/j.jsamd.2024.100722_bib15 article-title: Microstructure of hard and optically transparent HfO2 films prepared by high-power impulse magnetron sputtering with a pulsed oxygen flow control publication-title: Thin Solid Films doi: 10.1016/j.tsf.2016.10.059 contributor: fullname: Pi – volume: 24 year: 2015 ident: 10.1016/j.jsamd.2024.100722_bib12 article-title: The role of pulse length in target poisoning during reactive HiPIMS: application to amorphous HfO2 publication-title: Plasma Sources Sci. Technol. doi: 10.1088/0963-0252/24/3/035015 contributor: fullname: Ganesan – volume: 54 start-page: 1048 year: 2009 ident: 10.1016/j.jsamd.2024.100722_bib24 article-title: Plasma modeling of a PEALD system for the deposition of TiO2 and HfO2 publication-title: J. Kor. Phys. Soc. doi: 10.3938/jkps.54.1048 contributor: fullname: Joo – volume: 136 start-page: 873 year: 2019 ident: 10.1016/j.jsamd.2024.100722_bib6 article-title: Hf-based high-κ dielectrics: a review publication-title: Acta Phys. Pol. doi: 10.12693/APhysPolA.136.873 contributor: fullname: Kol – volume: 205 start-page: 2120 year: 2010 ident: 10.1016/j.jsamd.2024.100722_bib25 article-title: Influence of O2/Ar flow ratio on the structure and optical properties of sputtered hafnium dioxide thin films publication-title: Surf. Coat. Technol. doi: 10.1016/j.surfcoat.2010.08.116 contributor: fullname: Liu – volume: 265 start-page: 114999 year: 2021 ident: 10.1016/j.jsamd.2024.100722_bib9 article-title: Conduction mechanisms responsible for leakage currents in RF sputtered HfO2 high-κ gate-oxide thin film MOS capacitors publication-title: Mater. Sci. contributor: fullname: Bhanu – volume: 257 year: 2023 ident: 10.1016/j.jsamd.2024.100722_bib28 article-title: Effect on passivation mechanism and properties of HfO2/crystalline-Si interface under different annealing atmosphere publication-title: Sol. Energy Mater. Sol. Cells doi: 10.1016/j.solmat.2023.112384 contributor: fullname: Zhang – volume: 10 start-page: 136 year: 2020 ident: 10.1016/j.jsamd.2024.100722_bib29 article-title: Comparison of hafnium dioxide and zirconium dioxide grown by plasma-enhanced atomic layer deposition for the application of electronic materials publication-title: Crystals doi: 10.3390/cryst10020136 contributor: fullname: Xiao – volume: 10 year: 2023 ident: 10.1016/j.jsamd.2024.100722_bib30 article-title: Engineering of electromechanical oxides by symmetry breaking publication-title: Adv. Mater. Interfac. doi: 10.1002/admi.202300083 contributor: fullname: Zhang – volume: 102 year: 2020 ident: 10.1016/j.jsamd.2024.100722_bib38 article-title: Effect of electric field on defect generation and migration in HfO 2 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.102.014106 contributor: fullname: Strand – volume: 112 year: 2018 ident: 10.1016/j.jsamd.2024.100722_bib5 article-title: Low-temperature fabrication of sputtered high- k HfO2 gate dielectric for flexible a-IGZO thin film transistors publication-title: Appl. Phys. Lett. doi: 10.1063/1.5022088 contributor: fullname: Yao – volume: 12 start-page: 1995 year: 2022 ident: 10.1016/j.jsamd.2024.100722_bib18 article-title: Role of ambient hydrogen in HiPIMS-ITO film during annealing process in a large temperature range publication-title: Nanomaterials doi: 10.3390/nano12121995 contributor: fullname: Zhao – volume: 207 year: 2023 ident: 10.1016/j.jsamd.2024.100722_bib19 article-title: Modulation of carrier density in indium–gallium–zinc-oxide thin film prepared by high-power impulse magnetron sputtering publication-title: Vacuum doi: 10.1016/j.vacuum.2022.111640 contributor: fullname: Zhao – volume: 11 year: 2010 ident: 10.1016/j.jsamd.2024.100722_bib1 article-title: Present status of amorphous In–Ga–Zn–O thin-film transistors publication-title: Sci. Technol. Adv. Mater. doi: 10.1088/1468-6996/11/4/044305 contributor: fullname: Kamiya – volume: 434 year: 2022 ident: 10.1016/j.jsamd.2024.100722_bib21 article-title: Effect of oxygen flow rate ratio on crystalline phase and properties of copper oxide films prepared by room-temperature high-power impulse magnetron sputtering publication-title: Surf. Coat. Technol. doi: 10.1016/j.surfcoat.2022.128215 contributor: fullname: Zhao – volume: 200 year: 2022 ident: 10.1016/j.jsamd.2024.100722_bib16 article-title: Effect of power density on compositional and structural evolution of ITO thin film by HiPIMS method publication-title: Vacuum doi: 10.1016/j.vacuum.2022.111034 contributor: fullname: Zhao – volume: 68 start-page: 4450 year: 2021 ident: 10.1016/j.jsamd.2024.100722_bib2 article-title: Effect of bandgap widening on negative-bias illumination stress stability of oxide thin-film transistors publication-title: IEEE Trans. Electron. Dev. doi: 10.1109/TED.2021.3095135 contributor: fullname: Deng – volume: 11 start-page: 4393 year: 2021 ident: 10.1016/j.jsamd.2024.100722_bib7 article-title: Influence of hydrogen ions on the performance of thin-film transistors with solution-processed AlOx gate dielectrics publication-title: Appl. Sci. doi: 10.3390/app11104393 contributor: fullname: Wu – volume: 53 start-page: 206 year: 2021 ident: 10.1016/j.jsamd.2024.100722_bib10 article-title: Oxygen partial pressure influenced stoichiometry, structural, electrical, and optical properties of DC reactive sputtered hafnium oxide films publication-title: Surf. Interface Anal. doi: 10.1002/sia.6902 contributor: fullname: Venkataiah – volume: 365 start-page: 336 year: 2016 ident: 10.1016/j.jsamd.2024.100722_bib32 article-title: Optimizing HiPIMS pressure for deposition of high-k (k=18.3) amorphous HfO2 publication-title: Appl. Surf. Sci. doi: 10.1016/j.apsusc.2016.01.017 contributor: fullname: Ganesan – volume: 292 year: 2022 ident: 10.1016/j.jsamd.2024.100722_bib36 article-title: Post-deposition annealing effect on the structural and electrical properties of Ytterbium oxide as an alternative gate dielectric publication-title: Mater. Chem. Phys. doi: 10.1016/j.matchemphys.2022.126875 contributor: fullname: Morkoc – volume: 196 year: 2022 ident: 10.1016/j.jsamd.2024.100722_bib17 article-title: Effect of working pressure on Sn/In composition and optoelectronic properties of ITO films prepared by high power impulse magnetron sputtering publication-title: Vacuum doi: 10.1016/j.vacuum.2021.110762 contributor: fullname: Zhao – volume: 15 start-page: 627 year: 1966 ident: 10.1016/j.jsamd.2024.100722_bib22 article-title: Optical properties and electronic structure of amorphous germanium publication-title: Phys. Status Solidi B doi: 10.1002/pssb.19660150224 contributor: fullname: Tauc – volume: 63 start-page: 4315 year: 2016 ident: 10.1016/j.jsamd.2024.100722_bib4 article-title: High-mobility and good-stability thin-film transistors with scandium-substituted indium oxide semiconductors publication-title: IEEE Trans. Electron. Dev. doi: 10.1109/TED.2016.2612690 contributor: fullname: Song – volume: 14 start-page: 195 year: 2022 ident: 10.1016/j.jsamd.2024.100722_bib40 article-title: Al2O3/HfO2 nanolaminate dielectric boosting IGZO-based flexible thin-film transistors publication-title: Nano-Micro Lett. doi: 10.1007/s40820-022-00929-y contributor: fullname: Shi – volume: 48 start-page: 34668 year: 2022 ident: 10.1016/j.jsamd.2024.100722_bib20 article-title: Modulation of the conductive behavior of NiO thin film deposited by HiPIMS through varying the O2 flow ratio publication-title: Ceram. Int. doi: 10.1016/j.ceramint.2022.08.054 contributor: fullname: Zhang – volume: 104 year: 2014 ident: 10.1016/j.jsamd.2024.100722_bib23 article-title: Tailoring the index of refraction of nanocrystalline hafnium oxide thin films publication-title: Appl. Phys. Lett. doi: 10.1063/1.4866257 contributor: fullname: Vargas – volume: 1 start-page: 1651 year: 2013 ident: 10.1016/j.jsamd.2024.100722_bib33 article-title: Solution-processed high-k HfO2 gate dielectric processed under softening temperature of polymer substrates publication-title: J. Mater. Chem. C doi: 10.1039/c2tc00481j contributor: fullname: Yoo |
SSID | ssj0002118454 |
Score | 2.3118942 |
Snippet | High-k hafnium oxide (HfO2) film was prepared by high power impulse magnetron sputtering (HiPIMS). The influences of oxygen supply on the plasma state, film... |
SourceID | doaj crossref elsevier |
SourceType | Open Website Aggregation Database Publisher |
StartPage | 100722 |
SubjectTerms | Flexible thin film transistor (TFT) Hafnium oxide High power impulse magnetron sputtering Oxide semiconductor Room-temperature-fabrication |
Title | Dielectric properties of hafnium oxide film prepared by HiPIMS at different O2/Ar ratios and their influences on TFT performance |
URI | https://dx.doi.org/10.1016/j.jsamd.2024.100722 https://doaj.org/article/161869cfc05b4834a490a4ffa61334b9 |
Volume | 9 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwrV1Lb9swDBaGnrrDsCeWvcBDjzXqSFRsHdttQVqg64ClQG8G9cJcLE6QusB620-fHnHrXbbLrgJBGSQt0vSnj4wd2Jps7SpRhANSFUheFkooLFQoTaWnKmSk2Ic8_zJbXOLZlbwajfqKmLBMD5wNd5QI3ZXxppQ6Nr4IVUnoPYU8JFDnq3tTOfqYimdwWKpR4kAzlABd1ze0itygHBM0gPM_UlFi7B9lpFGWmT9lT3blIRznx3rGHrnuOXs8Ig18wX59avPsmtbAJrbSt5ETFdYevpPv2tsVrH-21oFvf6yCgEsQc9B3sGi_np5_A-phmIrSwwU_Ot5CioIboM5C-nEA7TC6JOjtYDlfwubhgsFLdjn_vPy4KHZzFAoTXrC-qOrSoVeRGU-hIVGWWoW6xylvJFplZ9IYTUKo4B6iaU3cc1EFORS8tBzFK7bXrTv3moEWWk61DT7UChU6ckbP0DpelRQBqRN2OJi02WS6jGbAkV03yQNN9ECTPTBhJ9Hs96KR6zothAhodhHQ_CsCJmw2OK3ZlQ25HAiq2r_t_uZ_7P6W7UeVGT32ju3121v3PtQpvf6QQvI3c4Hj-Q |
link.rule.ids | 315,786,790,870,2115,27955,27956 |
linkProvider | Directory of Open Access Journals |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Dielectric+properties+of+hafnium+oxide+film+prepared+by+HiPIMS+at+different+O2%2FAr+ratios+and+their+influences+on+TFT+performance&rft.jtitle=Journal+of+science.+Advanced+materials+and+devices&rft.au=Ming-Jie+Zhao&rft.au=Yao-Tian+Wang&rft.au=Jia-Hao+Yan&rft.au=Hai-Cheng+Li&rft.date=2024-06-01&rft.pub=Elsevier&rft.eissn=2468-2179&rft.volume=9&rft.issue=2&rft.spage=100722&rft_id=info:doi/10.1016%2Fj.jsamd.2024.100722&rft.externalDBID=DOA&rft.externalDocID=oai_doaj_org_article_161869cfc05b4834a490a4ffa61334b9 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2468-2179&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2468-2179&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2468-2179&client=summon |