Influence of nitrogen concentration on electrical, mechanical, and structural properties of tantalum nitride thin films prepared via DC magnetron sputtering

• Published in: Applied physics. A, Materials science & processing Vol. 128; no. 5
• Main Authors: Dastan, Davoud, Shan, Ke, Jafari, Azadeh, Gity, Farzan, Yin, Xi-Tao, Shi, Zhicheng, Alharbi, Najlaa D., Reshi, Bilal Ahmad, Fu, Wenbin, Ţălu, Ştefan, Aljerf, Loai, Garmestani, Hamid, Ansari, Lida
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.05.2022; Springer Nature B.V
• Subjects: Applied physics; Atomic force microscopy; Characterization and Evaluation of Materials; Condensed Matter Physics; Crystallites; Domains; Face centered cubic lattice; Field emission microscopy; Grain boundaries; Grain size; Hardness; Machines; Magnetic properties; Magnetron sputtering; Manufacturing; Materials science; Mechanical properties; Microscopy; Nanotechnology; Nitrogen; Optical and Electronic Materials; Photomicrographs; Physics; Physics and Astronomy; Processes; Semiconductor devices; Silicon substrates; Silicon wafers; Surface roughness; Surfaces and Interfaces; Tantalum; Tantalum nitrides; Thin Films; Tantalum nitride thin film; Nitrogen concentration; Electrical resistivity; Sputtering technique; AFM and FESEM

Tantalum nitride thin films are grown on silicon wafers using a mixture of Ar/N 2 using DC magnetron sputtering. The influence of nitrogen concentration on various features of tantalum nitride thin films is systematically studied. X-ray diffraction results show characteristic peaks of FCC tantalum n...