Influence of nitrogen concentration on electrical, mechanical, and structural properties of tantalum nitride thin films prepared via DC magnetron sputtering - Dastan, Davoud; Shan, Ke; Jafari, Azadeh; Gity, Farzan; Yin, Xi-Tao; Shi, Zhicheng; Alharbi, Najlaa D.; Reshi, Bilal Ahmad; Fu, Wenbin; Ţălu, Ştefan; Aljerf, Loai; Garmestani, Hamid; et al. (Applied physics. A, Materials science & processing, 2022)
Keywords: Applied physics; Atomic force microscopy; Characterization and Evaluation of Materials; Condensed Matter Physics; Crystallites; Domains; Face centered cubic lattice; Field emission microscopy; Grain boundaries; Grain size; Hardness; Machines; Magnetic properties; Magnetron sputtering; Manufacturing; Materials science; Mechanical properties; Microscopy; Nanotechnology; Nitrogen; Optical and Electronic Materials; Photomicrographs; Physics; Physics and Astronomy; Processes; Semiconductor devices; Silicon substrates; Silicon wafers; Surface roughness; Surfaces and Interfaces; Tantalum; Tantalum nitrides; Thin Films; Tantalum nitride thin film; Nitrogen concentration; Electrical resistivity; Sputtering technique; AFM and FESEM