Highly precise Ti/Pt/Cr/Au thin-film temperature sensor embedded in a microfluidic device

A multilayer (Ti/Pt/Cr/Au) resistive temperature sensor was proposed and investigated to precisely measure the temperature characteristic in microfluidic devices. The Ti/Pt/Cr/Au sensor was fabricated by direct current (DC) sputtering, vacuum evaporation and liftoff process. The thermal annealing te...

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Published inRare metals Vol. 40; no. 1; pp. 195 - 201
Main Authors Wang, Jie-Jun, Wang, Tao, Wu, Chuan-Gui, Luo, Wen-Bo, Shuai, Yao, Zhang, Wang-Li
Format Journal Article
LanguageEnglish
Published Beijing Nonferrous Metals Society of China 01.01.2021
Springer Nature B.V
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Abstract A multilayer (Ti/Pt/Cr/Au) resistive temperature sensor was proposed and investigated to precisely measure the temperature characteristic in microfluidic devices. The Ti/Pt/Cr/Au sensor was fabricated by direct current (DC) sputtering, vacuum evaporation and liftoff process. The thermal annealing test was conducted in the temperature range of 200–800 °C for obtaining an appropriate property of the multilayer. Based on the experimental results, 400 °C was selected as the experimental annealing temperature for the Ti/Pt/Cr/Au layer. The redistribution of structural imperfections and recrystallization promote the density and adhesion of multilayer during the annealing process. With the annealing temperature rising, the annealing process leads to through-thickness migration of chromium and partial depletion of the adhesive layer. The Ti also diffuses into the Pt, which makes the interface disappear. Nevertheless, the layer remains continuous. The temperature coefficient of resistance (TCR) of the sensors was investigated through the microfluidic testing system. The excellent stability and sensitivity of the Ti/Pt/Cr/Au thin-film temperature sensor are verified. Furthermore, the capability of the Ti/Pt/Cr/Au thin-film temperature sensor detecting the sudden temperature change caused by bubble effect is very meaningful to the microfluidic devices.
AbstractList A multilayer (Ti/Pt/Cr/Au) resistive temperature sensor was proposed and investigated to precisely measure the temperature characteristic in microfluidic devices. The Ti/Pt/Cr/Au sensor was fabricated by direct current (DC) sputtering, vacuum evaporation and liftoff process. The thermal annealing test was conducted in the temperature range of 200–800 °C for obtaining an appropriate property of the multilayer. Based on the experimental results, 400 °C was selected as the experimental annealing temperature for the Ti/Pt/Cr/Au layer. The redistribution of structural imperfections and recrystallization promote the density and adhesion of multilayer during the annealing process. With the annealing temperature rising, the annealing process leads to through-thickness migration of chromium and partial depletion of the adhesive layer. The Ti also diffuses into the Pt, which makes the interface disappear. Nevertheless, the layer remains continuous. The temperature coefficient of resistance (TCR) of the sensors was investigated through the microfluidic testing system. The excellent stability and sensitivity of the Ti/Pt/Cr/Au thin-film temperature sensor are verified. Furthermore, the capability of the Ti/Pt/Cr/Au thin-film temperature sensor detecting the sudden temperature change caused by bubble effect is very meaningful to the microfluidic devices.
A multilayer (Ti/Pt/Cr/Au) resistive temperature sensor was proposed and investigated to precisely measure the temperature characteristic in microfluidic devices. The Ti/Pt/Cr/Au sensor was fabricated by direct current (DC) sputtering, vacuum evaporation and liftoff process. The thermal annealing test was conducted in the temperature range of 200–800 °C for obtaining an appropriate property of the multilayer. Based on the experimental results, 400 °C was selected as the experimental annealing temperature for the Ti/Pt/Cr/Au layer. The redistribution of structural imperfections and recrystallization promote the density and adhesion of multilayer during the annealing process. With the annealing temperature rising, the annealing process leads to through-thickness migration of chromium and partial depletion of the adhesive layer. The Ti also diffuses into the Pt, which makes the interface disappear. Nevertheless, the layer remains continuous. The temperature coefficient of resistance (TCR) of the sensors was investigated through the microfluidic testing system. The excellent stability and sensitivity of the Ti/Pt/Cr/Au thin-film temperature sensor are verified. Furthermore, the capability of the Ti/Pt/Cr/Au thin-film temperature sensor detecting the sudden temperature change caused by bubble effect is very meaningful to the microfluidic devices.
Author Luo, Wen-Bo
Shuai, Yao
Zhang, Wang-Li
Wang, Jie-Jun
Wu, Chuan-Gui
Wang, Tao
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Issue 1
Keywords Ti/Pt/Cr/Au layer
Temperature coefficient of resistance (TCR)
Annealing process
Recrystallization
Microfluidic device
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Snippet A multilayer (Ti/Pt/Cr/Au) resistive temperature sensor was proposed and investigated to precisely measure the temperature characteristic in microfluidic...
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SubjectTerms Annealing
Biomaterials
Chemistry and Materials Science
Chromium
Depletion
Direct current
Energy
Gold
Materials Engineering
Materials Science
Metallic Materials
Multilayers
Nanoscale Science and Technology
Physical Chemistry
Platinum
Recrystallization
Sensors
Temperature
Temperature sensors
Thin films
Vacuum evaporation
Title Highly precise Ti/Pt/Cr/Au thin-film temperature sensor embedded in a microfluidic device
URI https://link.springer.com/article/10.1007/s12598-019-01301-7
https://www.proquest.com/docview/2280219156
Volume 40
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