Highly precise Ti/Pt/Cr/Au thin-film temperature sensor embedded in a microfluidic device
A multilayer (Ti/Pt/Cr/Au) resistive temperature sensor was proposed and investigated to precisely measure the temperature characteristic in microfluidic devices. The Ti/Pt/Cr/Au sensor was fabricated by direct current (DC) sputtering, vacuum evaporation and liftoff process. The thermal annealing te...
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Published in | Rare metals Vol. 40; no. 1; pp. 195 - 201 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
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Beijing
Nonferrous Metals Society of China
01.01.2021
Springer Nature B.V |
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Abstract | A multilayer (Ti/Pt/Cr/Au) resistive temperature sensor was proposed and investigated to precisely measure the temperature characteristic in microfluidic devices. The Ti/Pt/Cr/Au sensor was fabricated by direct current (DC) sputtering, vacuum evaporation and liftoff process. The thermal annealing test was conducted in the temperature range of 200–800 °C for obtaining an appropriate property of the multilayer. Based on the experimental results, 400 °C was selected as the experimental annealing temperature for the Ti/Pt/Cr/Au layer. The redistribution of structural imperfections and recrystallization promote the density and adhesion of multilayer during the annealing process. With the annealing temperature rising, the annealing process leads to through-thickness migration of chromium and partial depletion of the adhesive layer. The Ti also diffuses into the Pt, which makes the interface disappear. Nevertheless, the layer remains continuous. The temperature coefficient of resistance (TCR) of the sensors was investigated through the microfluidic testing system. The excellent stability and sensitivity of the Ti/Pt/Cr/Au thin-film temperature sensor are verified. Furthermore, the capability of the Ti/Pt/Cr/Au thin-film temperature sensor detecting the sudden temperature change caused by bubble effect is very meaningful to the microfluidic devices. |
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AbstractList | A multilayer (Ti/Pt/Cr/Au) resistive temperature sensor was proposed and investigated to precisely measure the temperature characteristic in microfluidic devices. The Ti/Pt/Cr/Au sensor was fabricated by direct current (DC) sputtering, vacuum evaporation and liftoff process. The thermal annealing test was conducted in the temperature range of 200–800 °C for obtaining an appropriate property of the multilayer. Based on the experimental results, 400 °C was selected as the experimental annealing temperature for the Ti/Pt/Cr/Au layer. The redistribution of structural imperfections and recrystallization promote the density and adhesion of multilayer during the annealing process. With the annealing temperature rising, the annealing process leads to through-thickness migration of chromium and partial depletion of the adhesive layer. The Ti also diffuses into the Pt, which makes the interface disappear. Nevertheless, the layer remains continuous. The temperature coefficient of resistance (TCR) of the sensors was investigated through the microfluidic testing system. The excellent stability and sensitivity of the Ti/Pt/Cr/Au thin-film temperature sensor are verified. Furthermore, the capability of the Ti/Pt/Cr/Au thin-film temperature sensor detecting the sudden temperature change caused by bubble effect is very meaningful to the microfluidic devices. A multilayer (Ti/Pt/Cr/Au) resistive temperature sensor was proposed and investigated to precisely measure the temperature characteristic in microfluidic devices. The Ti/Pt/Cr/Au sensor was fabricated by direct current (DC) sputtering, vacuum evaporation and liftoff process. The thermal annealing test was conducted in the temperature range of 200–800 °C for obtaining an appropriate property of the multilayer. Based on the experimental results, 400 °C was selected as the experimental annealing temperature for the Ti/Pt/Cr/Au layer. The redistribution of structural imperfections and recrystallization promote the density and adhesion of multilayer during the annealing process. With the annealing temperature rising, the annealing process leads to through-thickness migration of chromium and partial depletion of the adhesive layer. The Ti also diffuses into the Pt, which makes the interface disappear. Nevertheless, the layer remains continuous. The temperature coefficient of resistance (TCR) of the sensors was investigated through the microfluidic testing system. The excellent stability and sensitivity of the Ti/Pt/Cr/Au thin-film temperature sensor are verified. Furthermore, the capability of the Ti/Pt/Cr/Au thin-film temperature sensor detecting the sudden temperature change caused by bubble effect is very meaningful to the microfluidic devices. |
Author | Luo, Wen-Bo Shuai, Yao Zhang, Wang-Li Wang, Jie-Jun Wu, Chuan-Gui Wang, Tao |
Author_xml | – sequence: 1 givenname: Jie-Jun surname: Wang fullname: Wang, Jie-Jun organization: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China – sequence: 2 givenname: Tao orcidid: 0000-0001-8453-535X surname: Wang fullname: Wang, Tao email: t.wang@uestc.edu.cn organization: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China – sequence: 3 givenname: Chuan-Gui surname: Wu fullname: Wu, Chuan-Gui organization: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China – sequence: 4 givenname: Wen-Bo surname: Luo fullname: Luo, Wen-Bo organization: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China – sequence: 5 givenname: Yao surname: Shuai fullname: Shuai, Yao organization: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China – sequence: 6 givenname: Wang-Li surname: Zhang fullname: Zhang, Wang-Li organization: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China |
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Cites_doi | 10.1016/j.applthermaleng.2015.08.019 10.1007/s12598-015-0632-0 10.3390/s16070964 10.1016/j.tsf.2017.08.028 10.1088/0960-1317/21/2/025025 10.1115/1.4004340 10.1109/JMEMS.2004.823224 10.1063/1.3499270 10.1007/s00216-014-8297-3 10.1016/j.desal.2013.03.007 10.1088/0960-1317/19/6/065010 10.1016/j.apsusc.2012.09.094 10.1016/j.surfcoat.2015.08.074 10.1007/s12598-015-0680-5 10.1016/j.microrel.2017.08.006 10.1007/s12598-016-0703-x 10.1116/1.2359739 10.1080/01457630304040 10.1021/ja808077d 10.1039/C0LC00157K 10.1063/1.1949715 10.1088/0953-2048/19/10/014 10.1088/0957-0233/20/4/045206 10.3390/s18010299 10.1023/A:1024979829573 10.1109/JMEMS.2015.2394483 10.1016/j.sna.2007.04.006 10.1016/S0924-4247(99)00356-8 10.1088/0953-2048/21/2/025016 10.3390/s18051498 10.1186/s11671-015-1124-8 10.1016/j.ijheatmasstransfer.2012.11.038 10.1039/C6LC00260A |
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Keywords | Ti/Pt/Cr/Au layer Temperature coefficient of resistance (TCR) Annealing process Recrystallization Microfluidic device |
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Snippet | A multilayer (Ti/Pt/Cr/Au) resistive temperature sensor was proposed and investigated to precisely measure the temperature characteristic in microfluidic... |
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SubjectTerms | Annealing Biomaterials Chemistry and Materials Science Chromium Depletion Direct current Energy Gold Materials Engineering Materials Science Metallic Materials Multilayers Nanoscale Science and Technology Physical Chemistry Platinum Recrystallization Sensors Temperature Temperature sensors Thin films Vacuum evaporation |
Title | Highly precise Ti/Pt/Cr/Au thin-film temperature sensor embedded in a microfluidic device |
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