Thermal stability of amorphous metal chalcogenide thin films
•Ag-based electrolytes have a higher thermal stability than Cu-based electrolytes.•Annealing marginally influences the ionic conduction of Ag-based electrolytes.•In the Cu-GeSe films, a Cu2-xSe superionic conducting composition is formed.•Annealing of the Cu-GeTe films above 280 °C will hinder the C...
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| Published in | Journal of non-crystalline solids Vol. 559; p. 120663 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
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01.05.2021
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| Abstract | •Ag-based electrolytes have a higher thermal stability than Cu-based electrolytes.•Annealing marginally influences the ionic conduction of Ag-based electrolytes.•In the Cu-GeSe films, a Cu2-xSe superionic conducting composition is formed.•Annealing of the Cu-GeTe films above 280 °C will hinder the Cu ions diffusion.•An increase in thickness and contraction of the surface is observed at 100 °C.
Amorphous metal chalcogenides have good switching properties for resistive memories, but have low thermal stability. In this work, the response to rapid thermal stress, as high as 550 °C, of amorphous Cu-GeSe, Ag-GeSe, Cu-GeTe, Ag-GeTe thin films, is investigated. Metal-GeTe films, which are amorphous up to 280 °C, are the most stable. Metal-GeSe films start to crystallize at 190 °C and a Cu1.59Se phase, with 20.5% Cu vacancies and a structure similar to the c-Cu2-xSe superionic conductor, is formed. This might boost the performance of memory devices. Silver atoms migration is facilitated in Ag-GeSe by poor crystallization (below 5%, at all temperatures). Difussion of Ag is enhanced in Ag-GeTe, due to the crystallization of the cubic (Ag2Te)4-GeTe2 (Ag8GeTe6) phase, which has Ag+ vacancies. In Cu-GeTe, the formation of stoichiometric polycrystalline Cu0.67Ge0.33Te might hinder diffusion. An unusual anisotropic behaviour (increase in thickness, simultaneously with contraction of surface) is observed at 100 °C in Cu-GeSe and Cu-GeTe thin films, which suggests the orientation of the amorphous clusters package along a preferential direction. |
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| AbstractList | •Ag-based electrolytes have a higher thermal stability than Cu-based electrolytes.•Annealing marginally influences the ionic conduction of Ag-based electrolytes.•In the Cu-GeSe films, a Cu2-xSe superionic conducting composition is formed.•Annealing of the Cu-GeTe films above 280 °C will hinder the Cu ions diffusion.•An increase in thickness and contraction of the surface is observed at 100 °C.
Amorphous metal chalcogenides have good switching properties for resistive memories, but have low thermal stability. In this work, the response to rapid thermal stress, as high as 550 °C, of amorphous Cu-GeSe, Ag-GeSe, Cu-GeTe, Ag-GeTe thin films, is investigated. Metal-GeTe films, which are amorphous up to 280 °C, are the most stable. Metal-GeSe films start to crystallize at 190 °C and a Cu1.59Se phase, with 20.5% Cu vacancies and a structure similar to the c-Cu2-xSe superionic conductor, is formed. This might boost the performance of memory devices. Silver atoms migration is facilitated in Ag-GeSe by poor crystallization (below 5%, at all temperatures). Difussion of Ag is enhanced in Ag-GeTe, due to the crystallization of the cubic (Ag2Te)4-GeTe2 (Ag8GeTe6) phase, which has Ag+ vacancies. In Cu-GeTe, the formation of stoichiometric polycrystalline Cu0.67Ge0.33Te might hinder diffusion. An unusual anisotropic behaviour (increase in thickness, simultaneously with contraction of surface) is observed at 100 °C in Cu-GeSe and Cu-GeTe thin films, which suggests the orientation of the amorphous clusters package along a preferential direction. |
| ArticleNumber | 120663 |
| Author | Sava, F. Mihai, C. Porosnicu, C. Stavarache, I. Velea, A. Simandan, I.D. |
| Author_xml | – sequence: 1 givenname: F. surname: Sava fullname: Sava, F. organization: National Institute of Materials Physics, Atomistilor 405A, RO-077125 Magurele, Ilfov, Romania – sequence: 2 givenname: I.D. surname: Simandan fullname: Simandan, I.D. organization: National Institute of Materials Physics, Atomistilor 405A, RO-077125 Magurele, Ilfov, Romania – sequence: 3 givenname: I. surname: Stavarache fullname: Stavarache, I. organization: National Institute of Materials Physics, Atomistilor 405A, RO-077125 Magurele, Ilfov, Romania – sequence: 4 givenname: C. surname: Porosnicu fullname: Porosnicu, C. organization: National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, RO-077125 Magurele, Ilfov, Romania – sequence: 5 givenname: C. surname: Mihai fullname: Mihai, C. organization: National Institute of Materials Physics, Atomistilor 405A, RO-077125 Magurele, Ilfov, Romania – sequence: 6 givenname: A. surname: Velea fullname: Velea, A. email: alin.velea@infim.ro organization: National Institute of Materials Physics, Atomistilor 405A, RO-077125 Magurele, Ilfov, Romania |
| BookMark | eNqFkM1qwzAQhEVJoUnad_AL2NVaiuRAL23oHwR6Sc9iLa9qGdsKklvI29clhR67l1l2mWH4VmwxhpEYy4AXwEHddkU3X2w8pdAXJS-hgJIrJS7YEiotcllBuWBLzssyF3wrrtgqpY7Po0W1ZHeHluKAfZYmrH3vp1MWXIZDiMc2fKZsoGl-2hZ7Gz5o9A1lU-vHzPl-SNfs0mGf6OZX1-z96fGwe8n3b8-vu_t9bgVUU06AgLXTjSKrQTUoXY1bpRtUrtYbdBuSWjuSyGsrSVuJOC-yUgQSBBdrVp1zbQwpRXLmGP2A8WSAmx8KpjN_FMwPBXOmMFsfzlaa-315iiZZT6Olxkeyk2mC_z_kGz-8byc |
| CitedBy_id | crossref_primary_10_1002_pssb_202300200 crossref_primary_10_1016_j_jnoncrysol_2021_121235 crossref_primary_10_1080_01411594_2024_2342395 |
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| ContentType | Journal Article |
| Copyright | 2021 |
| Copyright_xml | – notice: 2021 |
| DBID | AAYXX CITATION |
| DOI | 10.1016/j.jnoncrysol.2021.120663 |
| DatabaseName | CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Chemistry Physics |
| EISSN | 1873-4812 |
| ExternalDocumentID | 10_1016_j_jnoncrysol_2021_120663 S0022309321000223 |
| GroupedDBID | --K --M -~X .~1 0R~ 1B1 1~. 1~5 4.4 457 4G. 5GY 5VS 7-5 71M 8P~ 9JN AABNK AABXZ AACTN AAEDT AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAXUO ABFNM ABJNI ABMAC ABXRA ABYKQ ACDAQ ACGFS ACRLP ADBBV ADEZE AEBSH AEKER AENEX AEZYN AFKWA AFRZQ AFTJW AGHFR AGUBO AGYEJ AHHHB AIEXJ AIKHN AITUG AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ AXJTR BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EO8 EO9 EP2 EP3 F5P FDB FIRID FNPLU FYGXN G-Q GBLVA IHE J1W KOM M24 M41 MAGPM MO0 N9A O-L O9- OAUVE OZT P-8 P-9 P2P PC. Q38 RNS ROL RPZ SDF SDG SDP SES SPC SPCBC SPD SSM SSZ T5K TWZ XPP ZMT ~02 ~G- 0SF 29L 6TJ AAQXK AAXKI AAYXX ABXDB ACNNM ADIYS ADMUD AFJKZ AI. AKRWK ASPBG AVWKF AZFZN CITATION EJD FEDTE FGOYB G-2 HVGLF HZ~ R2- RIG SEW SMS VH1 WUQ |
| ID | FETCH-LOGICAL-c318t-e1a1abf7d6ec716da4fba967da6fb75af5e477fe4a0bc4e7c4aabc4486e141303 |
| IEDL.DBID | AIKHN |
| ISSN | 0022-3093 |
| IngestDate | Thu Sep 26 19:53:58 EDT 2024 Fri Feb 23 02:45:08 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Keywords | Solid electrolytes Ion-conducting amorphous chalcogenides Thermal stability Thin film |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c318t-e1a1abf7d6ec716da4fba967da6fb75af5e477fe4a0bc4e7c4aabc4486e141303 |
| ParticipantIDs | crossref_primary_10_1016_j_jnoncrysol_2021_120663 elsevier_sciencedirect_doi_10_1016_j_jnoncrysol_2021_120663 |
| PublicationCentury | 2000 |
| PublicationDate | 2021-05-01 2021-05-00 |
| PublicationDateYYYYMMDD | 2021-05-01 |
| PublicationDate_xml | – month: 05 year: 2021 text: 2021-05-01 day: 01 |
| PublicationDecade | 2020 |
| PublicationTitle | Journal of non-crystalline solids |
| PublicationYear | 2021 |
| Publisher | Elsevier B.V |
| Publisher_xml | – name: Elsevier B.V |
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| SSID | ssj0000738 |
| Score | 2.3939626 |
| Snippet | •Ag-based electrolytes have a higher thermal stability than Cu-based electrolytes.•Annealing marginally influences the ionic conduction of Ag-based... |
| SourceID | crossref elsevier |
| SourceType | Aggregation Database Publisher |
| StartPage | 120663 |
| SubjectTerms | Ion-conducting amorphous chalcogenides Solid electrolytes Thermal stability Thin film |
| Title | Thermal stability of amorphous metal chalcogenide thin films |
| URI | https://dx.doi.org/10.1016/j.jnoncrysol.2021.120663 |
| Volume | 559 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LS8NAEB76QNSDaFWsj7IHr2mzzWY3RS-lWKpiTxZ6C5vNLk3pizYeevG3O3nZCoIHb0lgIHw7-80MfPstwL3LpbRDYyxsjzkOKB3P8rThyWH3hDEp91J3_bchH4zYy9gdl6BXnIVJZJU592ecnrJ1_qWVo9laRVFyxhdLGw7kbZq6uDhlqGI5ansVqHafXwfDHSELx_s2DceAXNCTybymOGWr9RYXGofFNm3SxN_c-b1K7VWe_imc5C0j6WZ_dQYlvajBYa-4qa0Gx3umgjU4SEWdanMOj5gDyLszgh1gqoHdkqUhcr5EbHHgJ3ONnTdREzlTS8yjKNQknkQLYqLZfHMBo_7Te29g5bclWAr3ZWxpKqkMjAi5VjgEhZKZQHa4CCU3gXClcTUTwmgm7UAxLRSTEh-YxzVNK9klVBALfQWEGVsmxvEON4oZL-jQMGCBK9pcaBXaog60QMdfZaYYfqEWm_o7RP0EUT9DtA4PBYz-jwX2kbv_jL7-V_QNHCVvmU7xFirx-kPfYS8RBw0oNz9pI8-YLzJHyi8 |
| link.rule.ids | 315,783,787,4509,24128,27936,27937,45597,45691 |
| linkProvider | Elsevier |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LawIxEB6sUmwPpbUttc8cet1q3Gyy0l5EKlofJwVvSzab4Iov1B789519VQuFHnpbdhlYviTfzMA3XwCeHS5lNTDGwvKYY4NSdy1XGx4Nu0eMSbkbu-v3B7w9Yh9jZ5yDZjYLE8kqU-5POD1m6_RNJUWzsgrDaMYXUxs25DUau7jYR1DAaqCOp7PQ6HTbgz0hC9v9Ng3HgFTQk8i8pthlq_UOFxqbxRp9oZG_uf17ljrIPK1zOEtLRtJI_uoCcnpRgmIzu6mtBKcHpoIlOI5FnWpzCW-4B5B3ZwQrwFgDuyNLQ-R8idhiw0_mGitvoiZyppa4j8JAk-0kXBATzuabKxi13ofNtpXelmApPJdbS1NJpW9EwLXCJiiQzPiyzkUgufGFI42jmRBGM1n1FdNCMSnxgblc0ziTXUMesdA3QJipysg43uZGMeP6dRr4zHdEjQutgqooA83Q8VaJKYaXqcWm3h5RL0LUSxAtw2sGo_djgT3k7j-jb_8V_QTF9rDf83qdQfcOTqIviWbxHvLb9ad-wLpi6z-m--YLGt_MIw |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Thermal+stability+of+amorphous+metal+chalcogenide+thin+films&rft.jtitle=Journal+of+non-crystalline+solids&rft.au=Sava%2C+F.&rft.au=Simandan%2C+I.D.&rft.au=Stavarache%2C+I.&rft.au=Porosnicu%2C+C.&rft.date=2021-05-01&rft.pub=Elsevier+B.V&rft.issn=0022-3093&rft.eissn=1873-4812&rft.volume=559&rft_id=info:doi/10.1016%2Fj.jnoncrysol.2021.120663&rft.externalDocID=S0022309321000223 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0022-3093&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0022-3093&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0022-3093&client=summon |