Raman studies of InAs/In0.53Ga0.47As single quantum wells grown on InP substrate by M.B.E

• Published in: Superlattices and microstructures Vol. 17; no. 1; pp. 27 - 30
• Main Authors: Quagliano, Lucia G., Simeone, M.Gabriella, Bruni, M.Rita, Gambacorti, Narciso, Zugarini, Marco
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01.01.1995; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Iii-v and ii-vi semiconductors; Iii-v semiconductors; Infrared and raman spectra and scattering; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Raman spectra; Gallium arsenides; Inorganic compounds; Ternary compounds; Quantum wells; Size effect; Binary compounds; Lattice vibrations; Experimental study; Indium arsenides; III-V semiconductors

We analyzed using the Raman technique a series of single quantum wells of InAs/In 0.53Ga0.47As at different thicknesses of InAs layer grown on a (100) InP substrate by MBE. These high lattice mismatch systems are particularly interesting for potential applications in the mid-IR wavelength range. The...