Work Function and Electron Affinity of Semiconductors: Doping Effect and Complication due to Fermi Level Pinning

Semiconductors are a major category of functional materials essential to various applications to sustain the modern society. Most applied materials or devices utilizing semiconductors are enabled by interfaces or junctions, such as solar cells, electronic/photonic devices, environmental sensors, and...

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Published inEnergy & environmental materials (Hoboken, N.J.) Vol. 4; no. 3; pp. 273 - 276
Main Author Shao, Guosheng
Format Journal Article
LanguageEnglish
Published Hoboken Wiley Subscription Services, Inc 01.07.2021
Subjects
Affinity
band edges
Catalysts
Electron affinity
Electronic devices
Energy bands
Fermi level
Fermi pinning
Functional materials
Heterojunctions
Interfaces
Photoelectric emission
Photovoltaic cells
Pinning
Semiconductors
Solar cells
ultraviolet photoelectron spectroscopy
work function
Work functions
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Abstract Semiconductors are a major category of functional materials essential to various applications to sustain the modern society. Most applied materials or devices utilizing semiconductors are enabled by interfaces or junctions, such as solar cells, electronic/photonic devices, environmental sensors, and redox hetero‐catalysts. Herein, the author provides a critical commentary on photoemission measurement of the work function and, more importantly, the electron affinity of semiconductors essential for energy band diagram of heterojunctions. Particular effort is made towards addressing complications associated with Fermi level pinning due to surficial states of doped semiconductors. UPS measurement of work functions and band edge levels of semiconductors, with particular focus on addressing complication due to Fermi level pinning.
AbstractList Semiconductors are a major category of functional materials essential to various applications to sustain the modern society. Most applied materials or devices utilizing semiconductors are enabled by interfaces or junctions, such as solar cells, electronic/photonic devices, environmental sensors, and redox hetero‐catalysts. Herein, the author provides a critical commentary on photoemission measurement of the work function and, more importantly, the electron affinity of semiconductors essential for energy band diagram of heterojunctions. Particular effort is made towards addressing complications associated with Fermi level pinning due to surficial states of doped semiconductors.
Semiconductors are a major category of functional materials essential to various applications to sustain the modern society. Most applied materials or devices utilizing semiconductors are enabled by interfaces or junctions, such as solar cells, electronic/photonic devices, environmental sensors, and redox hetero‐catalysts. Herein, the author provides a critical commentary on photoemission measurement of the work function and, more importantly, the electron affinity of semiconductors essential for energy band diagram of heterojunctions. Particular effort is made towards addressing complications associated with Fermi level pinning due to surficial states of doped semiconductors. UPS measurement of work functions and band edge levels of semiconductors, with particular focus on addressing complication due to Fermi level pinning.
Author Shao, Guosheng
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  organization: Zhengzhou Materials Genome Institute
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SubjectTerms Affinity
band edges
Catalysts
Electron affinity
Electronic devices
Energy bands
Fermi level
Fermi pinning
Functional materials
Heterojunctions
Interfaces
Photoelectric emission
Photovoltaic cells
Pinning
Semiconductors
Solar cells
ultraviolet photoelectron spectroscopy
work function
Work functions
Title Work Function and Electron Affinity of Semiconductors: Doping Effect and Complication due to Fermi Level Pinning
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