Shao, G. (2021). Work Function and Electron Affinity of Semiconductors: Doping Effect and Complication due to Fermi Level Pinning. Energy & environmental materials (Hoboken, N.J.), 4(3), 273-276. https://doi.org/10.1002/eem2.12218
Chicago Style (17th ed.) CitationShao, Guosheng. "Work Function and Electron Affinity of Semiconductors: Doping Effect and Complication Due to Fermi Level Pinning." Energy & Environmental Materials (Hoboken, N.J.) 4, no. 3 (2021): 273-276. https://doi.org/10.1002/eem2.12218.
MLA (9th ed.) CitationShao, Guosheng. "Work Function and Electron Affinity of Semiconductors: Doping Effect and Complication Due to Fermi Level Pinning." Energy & Environmental Materials (Hoboken, N.J.), vol. 4, no. 3, 2021, pp. 273-276, https://doi.org/10.1002/eem2.12218.