Event‐Driven Neuroplasticity and Spiking Modulation in a Photoelectric Neuristor Configured by Threshold Switching Memristor and Optoelectronic Transistor

• Published in: Advanced functional materials Vol. 35; no. 2
• Main Authors: Chen, Kuan‐Ting, Lin, Pei‐Lin, Huang, Ya‐Chi, Chen, Shuai‐Ming, Liao, Zih‐Siao, Chen, Jen‐Sue
• Format: Journal Article
• Language: English
• Published: Hoboken Wiley Subscription Services, Inc 01.01.2025
• Subjects: artificial neuron; associative learning; Electrical stimuli; Gallium; Indium gallium zinc oxide; leaky integrate‐and‐fire; Memristors; Neural networks; Neuromorphic computing; Neuroplasticity; Optical properties; Optoelectronics; optosynapse; Photoelectricity; Spiking; spiking neural network; Transistors

Integrating and implementing spiking neurons and synapse into neuromorphic hardware aligned with spiking neural networks (SNNs) offer significant promise for energy‐efficient operation and decision making. In this work, a stacked artificial synapse and spiking neuron utilizing an indium gallium zinc...