Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States

• Published in: Journal of electronic materials Vol. 43; no. 12; pp. 4560 - 4568
• Main Authors: Eller, Brianna S., Yang, Jialing, Nemanich, Robert J.
• Format: Journal Article
• Language: English
• Published: Boston Springer US 01.12.2014; Springer Nature B.V
• Subjects: Aluminum gallium nitrides; Bend tests; Bending machines; Characterization and Evaluation of Materials; Charge materials; Chemistry and Materials Science; Collapse; Conduction bands; Current leakage; Electron states; Electronic devices; Electronics; Electronics and Microelectronics; Fermi level; Gallium nitrides; Gates; Instrumentation; Materials Science; Nitrogen; Optical and Electronic Materials; Photoelectric emission; Photoelectron spectroscopy; Polarization; Reliability; Solid State Physics; Spectroscopic analysis; Vacancies; surface states; polarization; GaN; AlGaN; band bending

GaN-based devices are currently limited by reliability issues such as gate leakage and current collapse, where the mechanisms responsible for degradation are closely related to the electronic surface state configuration. Therefore, understanding the electronic surface state configuration of GaN-base...