Catalyst-free, tunable doping content of graphitic-N in arc-discharged graphene via gas and solid nitrogen sources and their formation mechanisms
Facile, cost-effective, and catalyst-free synthesis of graphitic-nitrogen (graphitic-N) doping in arc-discharged graphene has been achieved via a gas (N 2 ) nitrogen source. The N-doped graphene sheets are mainly of 2–5 layers. According to the growth mechanisms of the cathode-part (deposit) graphen...
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Published in | Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology Vol. 20; no. 10; pp. 1 - 9 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Dordrecht
Springer Netherlands
01.10.2018
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | Facile, cost-effective, and catalyst-free synthesis of graphitic-nitrogen (graphitic-N) doping in arc-discharged graphene has been achieved via a gas (N
2
) nitrogen source. The N-doped graphene sheets are mainly of 2–5 layers. According to the growth mechanisms of the cathode-part (deposit) graphene during the arcing process, N
2
exhibits a varying capability to form the graphitic-N doping. When N
2
acts as the nitrogen source, the cathode-part deposit is mainly consist of graphitic-N graphene sheets. The content of the nitrogen atom is calculated to be ~ 2.88 at%. However, when melamine is used as a nitrogen source, the atomic percentage (AP) of graphitic-N doping is almost equal to the pyridinic- and pyrrolic-N doping in the cathode-part deposit. Based on the findings, a new growth mechanism of graphitic-N doping in arc graphene is rationally proposed. The electrochemical impedance spectroscopy (EIS) results suggest that the graphite-N doping on the graphene can decrease the electron transfer resistance (Rct) and have better electrical conductivity than the normal N-doped graphene (N-NDG). |
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ISSN: | 1388-0764 1572-896X |
DOI: | 10.1007/s11051-018-4375-3 |