Oxygen-induced controllable p-type doping in 2D semiconductor transition metal dichalcogenides
Exposure to oxygen alters the physical and chemical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs). In particular, oxygen in the ambient may influence the device stability of 2D TMDs over time. Engineering the doping of 2D TMDs, especially hole doping is highly desirable...
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| Published in | Nano research Vol. 13; no. 12; pp. 3439 - 3444 |
|---|---|
| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Beijing
Tsinghua University Press
01.12.2020
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 1998-0124 1998-0000 |
| DOI | 10.1007/s12274-020-3038-8 |
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| Abstract | Exposure to oxygen alters the physical and chemical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs). In particular, oxygen in the ambient may influence the device stability of 2D TMDs over time. Engineering the doping of 2D TMDs, especially hole doping is highly desirable towards their device function. Herein, controllable oxygen-induced p-type doping in a range of hexagonal (MoTe
2
, WSe
2
, MoSe
2
and PtSe
2
) and pentagonal (PdSe
2
) 2D TMDs are demonstrated. Scanning tunneling microscopy, electrical transport and X-ray photoelectron spectroscopy are used to probe the origin of oxygen-derived hole doping. Three mechanisms are postulated that contribute to the hole doping in 2D TMDs, namely charge transfer from absorbed oxygen molecules, surface oxides, and chalcogen atom substitution. This work provides insights into the doping effects of oxygen, enabling the engineering of 2D TMDs properties for nanoelectronic applications. |
|---|---|
| AbstractList | Exposure to oxygen alters the physical and chemical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs). In particular, oxygen in the ambient may influence the device stability of 2D TMDs over time. Engineering the doping of 2D TMDs, especially hole doping is highly desirable towards their device function. Herein, controllable oxygen-induced p-type doping in a range of hexagonal (MoTe
2
, WSe
2
, MoSe
2
and PtSe
2
) and pentagonal (PdSe
2
) 2D TMDs are demonstrated. Scanning tunneling microscopy, electrical transport and X-ray photoelectron spectroscopy are used to probe the origin of oxygen-derived hole doping. Three mechanisms are postulated that contribute to the hole doping in 2D TMDs, namely charge transfer from absorbed oxygen molecules, surface oxides, and chalcogen atom substitution. This work provides insights into the doping effects of oxygen, enabling the engineering of 2D TMDs properties for nanoelectronic applications. Exposure to oxygen alters the physical and chemical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs). In particular, oxygen in the ambient may influence the device stability of 2D TMDs over time. Engineering the doping of 2D TMDs, especially hole doping is highly desirable towards their device function. Herein, controllable oxygen-induced p-type doping in a range of hexagonal (MoTe2, WSe2, MoSe2 and PtSe2) and pentagonal (PdSe2) 2D TMDs are demonstrated. Scanning tunneling microscopy, electrical transport and X-ray photoelectron spectroscopy are used to probe the origin of oxygen-derived hole doping. Three mechanisms are postulated that contribute to the hole doping in 2D TMDs, namely charge transfer from absorbed oxygen molecules, surface oxides, and chalcogen atom substitution. This work provides insights into the doping effects of oxygen, enabling the engineering of 2D TMDs properties for nanoelectronic applications. |
| Author | Zhang, Qian Gou, Jian Zhang, Wenjing Arramel Wee, Andrew Thye Shen Liang, Qijie |
| Author_xml | – sequence: 1 givenname: Qijie surname: Liang fullname: Liang, Qijie organization: SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Department of Physics, National University of Singapore – sequence: 2 givenname: Jian surname: Gou fullname: Gou, Jian organization: Department of Physics, National University of Singapore – sequence: 3 surname: Arramel fullname: Arramel organization: Department of Physics, National University of Singapore – sequence: 4 givenname: Qian surname: Zhang fullname: Zhang, Qian email: elezhqi@nus.edu.sg organization: Department of Materials Science and Engineering, National University of Singapore – sequence: 5 givenname: Wenjing surname: Zhang fullname: Zhang, Wenjing email: wjzhang@szu.edu.cn organization: SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University – sequence: 6 givenname: Andrew Thye Shen surname: Wee fullname: Wee, Andrew Thye Shen email: phyweets@nus.edu.sg organization: Department of Physics, National University of Singapore, Centre for Advanced 2D Materials, National University of Singapore |
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| Keywords | two-dimensional transition metal dichalcogenides oxygen substitution oxygen induced doping charge transfer |
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| SubjectTerms | Atomic/Molecular Structure and Spectra Biomedicine Biotechnology Chalcogenides Charge transfer Chemical properties Chemistry and Materials Science Collaboration Condensed Matter Physics Doping Electrodes Engineering Materials Science Microscopy Nanotechnology Oxygen P-type semiconductors Photoelectron spectroscopy Photoelectrons Research Article Scanning tunneling microscopy Science Spectrum analysis Transition metal compounds |
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| Title | Oxygen-induced controllable p-type doping in 2D semiconductor transition metal dichalcogenides |
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