Intersubband Raman gain in strained zincblende III-nitride-based step asymmetric quantum wells: non-parabolicity effects

• Published in: Optical and quantum electronics Vol. 50; no. 6; pp. 1 - 13
• Main Authors: Tiutiunnyk, A., Duque, C. A., Mora-Ramos, M. E.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.06.2018; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Computer Communication Networks; Conduction bands; Electrical Engineering; Gallium nitrides; Heterostructures; Intersubband transitions; Lasers; Mathematical analysis; Optical Devices; Optics; Photonics; Physics; Physics and Astronomy; Quantum wells; Wurtzite; Zincblende; Step asymmetric quantum wells; Zinc-blende III-nitrides; Intersubband Raman gain; Band non-parabolicity

The conduction band states in step-like strained zincblende nitride-based quantum wells are theoretically investigated including effects of band non-parabolicity. In particular, the intersubband Raman gain is calculated in order to identify the possible use of this kind of structures as sources of T...