Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates

• Published in: Journal of crystal growth Vol. 310; no. 23; pp. 4976 - 4978
• Main Authors: Mauder, C., Rahimzadeh Khoshroo, L., Behmenburg, H., Wen, T.C., Dikme, Y., Rzheutskii, M.V., Yablonskii, G.P., Woitok, J., Chou, M.M.C., Heuken, M., Kalisch, H., Jansen, R.H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier 15.11.2008
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure and morphology; thickness; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Thin film structure and morphology; Vapor phase epitaxy; growth from vapor phase; Doping; Photoluminescence; VPE; XRD; 81.15.Gh; Gallium nitride; B2. Semiconducting III-V materials; Thin films; 78.55.Cr; Relaxation; Rocking curve; Indium nitride; Crystal structure; 81.05.Ea; A1. Defects; Buffer layer; Magnesium additions; Defect density; Temperature dependence; Stacking faults; Surface morphology; Layer thickness; A1. X-ray diffraction; III-V compound; CVD; 61.10.Nz; MOVPE method; A3. Chemical vapor deposition processes; Strained layer; Growth mechanism; Coalescence; III-V semiconductors

We deposited pure m-plane GaN (1 1_ 0 0) layers on LiAlO2 (1 0 0) substrates by MOVPE using Mg-doped InGaN buffer layers of various thickness. These sealing layers are grown under nitrogen ambient and help to improve the film coalescence while reducing the oxygen background doping of the GaN films....