Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates - Mauder, C.; Rahimzadeh Khoshroo, L.; Behmenburg, H.; Wen, T.C.; Dikme, Y.; Rzheutskii, M.V.; Yablonskii, G.P.; Woitok, J.; Chou, M.M.C.; Heuken, M.; Kalisch, H.; Jansen, R.H. (Journal of crystal growth, 2008)
Keywords: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure and morphology; thickness; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Thin film structure and morphology; Vapor phase epitaxy; growth from vapor phase; Doping; Photoluminescence; VPE; XRD; 81.15.Gh; Gallium nitride; B2. Semiconducting III-V materials; Thin films; 78.55.Cr; Relaxation; Rocking curve; Indium nitride; Crystal structure; 81.05.Ea; A1. Defects; Buffer layer; Magnesium additions; Defect density; Temperature dependence; Stacking faults; Surface morphology; Layer thickness; A1. X-ray diffraction; III-V compound; CVD; 61.10.Nz; MOVPE method; A3. Chemical vapor deposition processes; Strained layer; Growth mechanism; Coalescence; III-V semiconductors