Highly efficient 1D p-Te/2D n-Bi2Te3 heterojunction self-driven broadband photodetector
Broadband photodetectors with self-driven functions have attracted intensive scientific interest due to their low energy consumption and high optical gain. However, high-performance broadband self-driven photodetectors are still a significant challenge due to the complex fabrication processes, envir...
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| Published in | Nano research Vol. 17; no. 3; pp. 1864 - 1874 |
|---|---|
| Main Authors | , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Beijing
Tsinghua University Press
01.03.2024
|
| Subjects | |
| Online Access | Get full text |
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| Abstract | Broadband photodetectors with self-driven functions have attracted intensive scientific interest due to their low energy consumption and high optical gain. However, high-performance broadband self-driven photodetectors are still a significant challenge due to the complex fabrication processes, environmental toxicity, high production costs of traditional 3D semiconductor materials and sharply raised contact resistance, severe interfacial recombination of 2D materials and 2D/3D mixed dimension heterojunction. Here, 1D p-Te/2D n-Bi
2
Te
3
heterojunctions are constructed by the simple and low-cost hydrothermal method. 1D p-Te/2D n-Bi
2
Te
3
devices are applied in photoelectrochemical (PEC) photodetectors, with their high performance attributed to the good interfacial contacts reducing interface recombination. The device demonstrated a broad wavelength range (365–850 nm) with an/
ph
//
dark
as high as 377.45. The
R
i
D
*, and external quantum efficiency (
EQE
) values of the device were as high as 12.07 mA/W, 5.87 × 10
10
Jones, and 41.05%, respectively, which were significantly better than the performance of the prepared Bi
2
Te
3
and Te devices. A comparison of the freshly fabricated device and the device after 30 days showed that 1D p-Te/2D n-Bi
2
Te
3
had excellent stability with only 18.08% decay of photocurrent. It is anticipated that this work will provide new emerging material for future design and preparation of a high-performance self-driven broadband photodetector. |
|---|---|
| AbstractList | Broadband photodetectors with self-driven functions have attracted intensive scientific interest due to their low energy consumption and high optical gain. However, high-performance broadband self-driven photodetectors are still a significant challenge due to the complex fabrication processes, environmental toxicity, high production costs of traditional 3D semiconductor materials and sharply raised contact resistance, severe interfacial recombination of 2D materials and 2D/3D mixed dimension heterojunction. Here, 1D p-Te/2D n-Bi
2
Te
3
heterojunctions are constructed by the simple and low-cost hydrothermal method. 1D p-Te/2D n-Bi
2
Te
3
devices are applied in photoelectrochemical (PEC) photodetectors, with their high performance attributed to the good interfacial contacts reducing interface recombination. The device demonstrated a broad wavelength range (365–850 nm) with an/
ph
//
dark
as high as 377.45. The
R
i
D
*, and external quantum efficiency (
EQE
) values of the device were as high as 12.07 mA/W, 5.87 × 10
10
Jones, and 41.05%, respectively, which were significantly better than the performance of the prepared Bi
2
Te
3
and Te devices. A comparison of the freshly fabricated device and the device after 30 days showed that 1D p-Te/2D n-Bi
2
Te
3
had excellent stability with only 18.08% decay of photocurrent. It is anticipated that this work will provide new emerging material for future design and preparation of a high-performance self-driven broadband photodetector. Broadband photodetectors with self-driven functions have attracted intensive scientific interest due to their low energy consumption and high optical gain. However, high-performance broadband self-driven photodetectors are still a significant challenge due to the complex fabrication processes, environmental toxicity, high production costs of traditional 3D semiconductor materials and sharply raised contact resistance, severe interfacial recombination of 2D materials and 2D/3D mixed dimension heterojunction. Here, 1D p-Te/2D n-Bi2Te3 heterojunctions are constructed by the simple and low-cost hydrothermal method. 1D p-Te/2D n-Bi2Te3 devices are applied in photoelectrochemical (PEC) photodetectors, with their high performance attributed to the good interfacial contacts reducing interface recombination. The device demonstrated a broad wavelength range (365–850 nm) with an/ph//dark as high as 377.45. The RiD*, and external quantum efficiency (EQE) values of the device were as high as 12.07 mA/W, 5.87 × 1010 Jones, and 41.05%, respectively, which were significantly better than the performance of the prepared Bi2Te3 and Te devices. A comparison of the freshly fabricated device and the device after 30 days showed that 1D p-Te/2D n-Bi2Te3 had excellent stability with only 18.08% decay of photocurrent. It is anticipated that this work will provide new emerging material for future design and preparation of a high-performance self-driven broadband photodetector. |
| Author | Liu, Gang Chen, Tianyuan Zhao, Chenchen Zhang, Bingke Pan, Jingwen Wang, Jinzhong Zeng, Zhi Jiao, Shujie Liu, Sihang Liu, Donghao Zhao, Liancheng Wang, Dongbo Fang, Xuan Cao, Jiamu |
| Author_xml | – sequence: 1 givenname: Chenchen surname: Zhao fullname: Zhao, Chenchen organization: School of Materials Science and Engineering, Harbin Institute of Technology – sequence: 2 givenname: Dongbo surname: Wang fullname: Wang, Dongbo email: wangdongbo@hit.edu.cn organization: School of Materials Science and Engineering, Harbin Institute of Technology – sequence: 3 givenname: Jiamu surname: Cao fullname: Cao, Jiamu email: caojiamu@hit.edu.cn organization: School of Astronautics, Harbin Institute of Technology – sequence: 4 givenname: Zhi surname: Zeng fullname: Zeng, Zhi organization: School of Materials Science and Engineering, Harbin Institute of Technology – sequence: 5 givenname: Bingke surname: Zhang fullname: Zhang, Bingke organization: School of Materials Science and Engineering, Harbin Institute of Technology – sequence: 6 givenname: Jingwen surname: Pan fullname: Pan, Jingwen organization: School of Materials Science and Engineering, Harbin Institute of Technology – sequence: 7 givenname: Donghao surname: Liu fullname: Liu, Donghao organization: School of Materials Science and Engineering, Harbin Institute of Technology – sequence: 8 givenname: Sihang surname: Liu fullname: Liu, Sihang organization: School of Materials Science and Engineering, Harbin Institute of Technology – sequence: 9 givenname: Shujie surname: Jiao fullname: Jiao, Shujie organization: School of Materials Science and Engineering, Harbin Institute of Technology – sequence: 10 givenname: Tianyuan surname: Chen fullname: Chen, Tianyuan organization: School of Materials Science and Engineering, Harbin Institute of Technology – sequence: 11 givenname: Gang surname: Liu fullname: Liu, Gang email: liugang@hpstar.ac.cn organization: Center for High Pressure Science and Technology Advanced Research – sequence: 12 givenname: Xuan surname: Fang fullname: Fang, Xuan email: fangx@cust.edu.cn organization: State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology – sequence: 13 givenname: Liancheng surname: Zhao fullname: Zhao, Liancheng organization: School of Materials Science and Engineering, Harbin Institute of Technology – sequence: 14 givenname: Jinzhong surname: Wang fullname: Wang, Jinzhong email: jinzhong_wang@hit.edu.cn organization: School of Materials Science and Engineering, Harbin Institute of Technology |
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| Keywords | 1D p-Te/2D n- Bi Te topological insulating states self-driven photodetector interfacial recombination |
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