Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy

• Published in: Journal of crystal growth Vol. 278; no. 1-4; pp. 299 - 304
• Main Authors: LU, Y. M, WU, C. X, WEI, Z. P, ZHANG, Z. Z, ZHAO, D. X, ZHANG, J. Y, LIU, Y. C, SHEN, D. Z, FAN, X. W
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier 01.05.2005
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Ii-vi semiconductors; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Inorganic compounds; B3. Heterojunction semiconductor device; Photoluminescence; Plasma assisted processing; Crystal growth from vapors; XRD; RHEED; Bl. ZnO/MgZno; Thin films; A3. Molecular beam epitaxy; Size effect; Molecular beam epitaxy; Magnesium oxides; B2. Semiconducting II-VI materials; Absorption spectra; Absorption edge; Ternary compounds; Transition element compounds; Binary compounds; Al. Photoluminescence; Experimental study; Quenching; Thickness; Zinc oxides; Al. Interface potential barrier; Heterostructures

In this paper, Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (R...