Luminescence of F-Type Defects and Their Thermal Stability in Sapphire Irradiated by Pulsed Ion Beams

• Published in: Optics and spectroscopy Vol. 128; no. 2; pp. 207 - 213
• Main Authors: Ananchenko, D. V., Nikiforov, S. V., Ramazanova, G. R., Batalov, R. I., Bayazitov, R. M., Novikov, H. A.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.02.2020; Springer Nature B.V
• Subjects: Aluminum oxide; Cathodoluminescence; Crystal defects; Defects; Ion beams; Lasers; Luminescence; Optical Devices; Optics; Photoluminescence; Photonics; Physics; Physics and Astronomy; Pulse duration; Radiation effects; Sapphire; Single crystals; Spectroscopy of Condensed Matter; Thermal stability; ion irradiation; luminescence; radiation-induced defects; sapphire
• ISSN: 0030-400X; 1562-6911
• DOI: 10.1134/S0030400X20020022

We studied the luminescence and the thermal stability of defects formed in α-Al 2 O 3 single crystals after pulsed treatment with a beam of C + /H + ions with an energy of 300 keV and a pulse duration of ~80 ns. By measuring optical absorption, photoluminescence, and pulsed cathodoluminescence, it is found that this type of exposure leads to intense generation of both single F and F + centers and more complex defects ( F 2  aggregate centers or vacancy–impurity complexes) in α-Al 2 O 3 . The thermal stability of F -type defects formed in α-Al 2 O 3 upon exposure to a pulsed ion beam is comparable to the stability of radiation-induced defects in neutron-irradiated samples.