Luminescence of F-Type Defects and Their Thermal Stability in Sapphire Irradiated by Pulsed Ion Beams
We studied the luminescence and the thermal stability of defects formed in α-Al 2 O 3 single crystals after pulsed treatment with a beam of C + /H + ions with an energy of 300 keV and a pulse duration of ~80 ns. By measuring optical absorption, photoluminescence, and pulsed cathodoluminescence, it i...
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Published in | Optics and spectroscopy Vol. 128; no. 2; pp. 207 - 213 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Moscow
Pleiades Publishing
01.02.2020
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | We studied the luminescence and the thermal stability of defects formed in α-Al
2
O
3
single crystals after pulsed treatment with a beam of C
+
/H
+
ions with an energy of 300 keV and a pulse duration of ~80 ns. By measuring optical absorption, photoluminescence, and pulsed cathodoluminescence, it is found that this type of exposure leads to intense generation of both single
F
and
F
+
centers and more complex defects (
F
2
aggregate centers or vacancy–impurity complexes) in α-Al
2
O
3
. The thermal stability of
F
-type defects formed in α-Al
2
O
3
upon exposure to a pulsed ion beam is comparable to the stability of radiation-induced defects in neutron-irradiated samples. |
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ISSN: | 0030-400X 1562-6911 |
DOI: | 10.1134/S0030400X20020022 |