A Highly Linear Low-Voltage Source-Degeneration Transconductor Based on Unity-Gain Buffer
A complementary metal oxide semiconductor （CMOS） transconductor based on a high performance unity-gain buffer driving the degeneration resistor was used to obtain a highly linear voltage-to-current conversion with considerable reduction of the supply voltage. Simulations show that the transconductor...
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| Published in | Tsinghua science and technology Vol. 14; no. 6; pp. 698 - 702 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier Ltd
01.12.2009
Department of Electronic Engineering, Tsinghua University, Beijing 100084, China |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1007-0214 1878-7606 1007-0214 |
| DOI | 10.1016/S1007-0214(09)70137-3 |
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| Abstract | A complementary metal oxide semiconductor （CMOS） transconductor based on a high performance unity-gain buffer driving the degeneration resistor was used to obtain a highly linear voltage-to-current conversion with considerable reduction of the supply voltage. Simulations show that the transconductor using an 0.18-μm standard CMOS process with a 1.2-V supply voltage has less than -80 dB total harmonic distortion （THD） for a 1-MHz 0.4-Vp-p differential input signal. The third-order intermodulation is less than -63 dB for 0.25 Vp-p differential inputs at 1 MHz. The DC power consumption in the transconductor core is 240 μW. This topology is a feasible solution for low voltage and low power applications. |
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| AbstractList | A complementary metal oxide semiconductor (CMOS) transconductor based on a high performance unity-gain buffer driving the degeneration resistor was used to obtain a highly linear voltage-to-current conversion with considerable reduction of the supply voltage.Simulations show that the transconductor using an 0.18-μm standard CMOS process with a 1.2-V supply voltage has less than -80 dB total harmonic distortion (THD) for a 1-MHz 0.4-Vp-p differential input signal.The third-order intermodulation is less than-63 dB for 0.25 Vp-p differential inputs at 1 MHz.The DC power consumption in the transconductor core is 240 μW.This topology is a feasible solution for low voltage and low power applications. A complementary metal oxide semiconductor （CMOS） transconductor based on a high performance unity-gain buffer driving the degeneration resistor was used to obtain a highly linear voltage-to-current conversion with considerable reduction of the supply voltage. Simulations show that the transconductor using an 0.18-μm standard CMOS process with a 1.2-V supply voltage has less than -80 dB total harmonic distortion （THD） for a 1-MHz 0.4-Vp-p differential input signal. The third-order intermodulation is less than -63 dB for 0.25 Vp-p differential inputs at 1 MHz. The DC power consumption in the transconductor core is 240 μW. This topology is a feasible solution for low voltage and low power applications. A complementary metal oxide semiconductor (CMOS) transconductor based on a high performance unity-gain buffer driving the degeneration resistor was used to obtain a highly linear voltage-to-current conversion with considerable reduction of the supply voltage. Simulations show that the transconductor using an 0.18-μm standard CMOS process with a 1.2-V supply voltage has less than −80 dB total harmonic distortion (THD) for a 1-MHz 0.4-V p-p differential input signal. The third-order intermodulation is less than −63 dB for 0.25 V p-p differential inputs at 1 MHz. The DC power consumption in the transconductor core is 240 μW. This topology is a feasible solution for low voltage and low power applications. A complementary metal oxide semiconductor (CMOS) transconductor based on a high performance unity-gain buffer driving the degeneration resistor was used to obtain a highly linear voltage-to-current conversion with considerable reduction of the supply voltage. Simulations show that the transconductor using an 0.18-km standard CMOS process with a 1.2-V supply voltage has less than -80 dB total harmonic distortion (THD) for a 1-MHz 0.4-V(p-p) differential input signal. The third-order intermodulation is less than -63 dB for 0.25 V(p-p) differential inputs at 1 MHz. The DC power consumption in the transconductor core is 240 kW. This topology is a feasible solution for low voltage and low power applications. |
| Author | 孔耀晖 刘爱荣 杨华中 |
| AuthorAffiliation | Department of Electronic Engineering, Tsinghua University, Beijing 100084, China |
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| Copyright | 2009 Tsinghua University Press Copyright © Wanfang Data Co. Ltd. All Rights Reserved. |
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| DOI | 10.1016/S1007-0214(09)70137-3 |
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| DocumentTitleAlternate | A Highly Linear Low-Voltage Source-Degeneration Transconductor Based on Unity-Gain Buffer |
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| Keywords | low voltage unity gain buffer low power transconductor high linearity |
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| References | Palmisano, Palumbo, Pennisi (bib10) 2000; 47 Fayed, Ismail (bib8) 2005; 52 Mehr, Welland (bib5) 1997; 32 Baruqui, Petraglia (bib12) 2006; 53 Behbahani, Weeguan, Karimi-Sanjaani (bib11) 2000; 35 Wang, Guggenbuhl (bib7) 1990; 25 Han (bib13) 2006; 53 Martinez, Steyaert, Sansen (bib2) 1993 Pennisi S, Scotti G, Trifiletti A. 150 μA CMOS Transconductor with 82 dB SFDR. In: Proceedings of IEEE Int. Symp. on Circuits and Systems. New Orleans, USA, 2007: 237–240. Nedugadi, Viswanathan (bib4) 1984; 31 Tsividis, Voorman (bib1) 1992 Liu, Yang (bib3) 2006; 27 Zhang X, El-Masry E I. A 1.8 V CMOS linear transconductor and its application to continuous-time filters. In: Proceedings of IEEE Int. Symp. on Circuits and Systems. Vancouver, Canada, 2004: 1012–1015. |
| References_xml | – volume: 32 start-page: 499 year: 1997 end-page: 513 ident: bib5 article-title: A CMOS continuous time Gm-C filter for PRML read channel applications at 150 Mb/s and beyond publication-title: IEEE Journal of Solid-State Circuits – volume: 35 start-page: 476 year: 2000 end-page: 489 ident: bib11 article-title: A broadband tunable CMOS channel-select filter for a low-IF wireless receiver publication-title: IEEE Journal of Solid-State Circuits – reference: Zhang X, El-Masry E I. A 1.8 V CMOS linear transconductor and its application to continuous-time filters. In: Proceedings of IEEE Int. Symp. on Circuits and Systems. Vancouver, Canada, 2004: 1012–1015. – volume: 52 start-page: 831 year: 2005 end-page: 835 ident: bib8 article-title: A low voltage highly linear voltage-controlled transconductor publication-title: IEEE Transactions on Circuits and Systems – volume: 47 start-page: 406 year: 2000 end-page: 410 ident: bib10 article-title: High-performance and simple CMOS unity-gain amplifier publication-title: IEEE Transactions on Circuits and Systems – volume: 53 start-page: 662 year: 2006 end-page: 666 ident: bib13 article-title: A novel tunable transconductance amplifier based on voltage-controlled resistance by MOS transistors publication-title: IEEE Transactions on Circuits and Systems II: Exp. Briefs – volume: 31 start-page: 891 year: 1984 end-page: 894 ident: bib4 article-title: Design of linear CMOS transconductor elements publication-title: IEEE Transactions on Circuits and Systems – year: 1992 ident: bib1 publication-title: Integrated Continuous-Time Filters – reference: Pennisi S, Scotti G, Trifiletti A. 150 μA CMOS Transconductor with 82 dB SFDR. In: Proceedings of IEEE Int. Symp. on Circuits and Systems. New Orleans, USA, 2007: 237–240. – year: 1993 ident: bib2 publication-title: High-Performance CMOS Continuous-Time Filters – volume: 27 start-page: 2101 year: 2006 end-page: 2105 ident: bib3 article-title: A 1 V, 156.7 μW, 65.9 dB rail-to-rail operational amplifier by means of negative resistance load and replica-amplifier gain enhancement publication-title: Chinese Journal of Semiconductors – volume: 53 start-page: 797 year: 2006 end-page: 801 ident: bib12 article-title: Linearly tunable CMOS OTA with constant dynamic range using source-degenerated current mirrors publication-title: IEEE Transactions on Circuits and Systems II: Exp. Briefs – volume: 25 start-page: 315 year: 1990 end-page: 317 ident: bib7 article-title: A voltage-controllable linear MOS transconductor using bias offset technique publication-title: IEEE Journal of Solid-State Circuits |
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| Snippet | A complementary metal oxide semiconductor （CMOS） transconductor based on a high performance unity-gain buffer driving the degeneration resistor was used to... A complementary metal oxide semiconductor (CMOS) transconductor based on a high performance unity-gain buffer driving the degeneration resistor was used to... |
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| SubjectTerms | CMOS工艺 high linearity low power low voltage transconductor unity gain buffer 互补金属氧化物半导体 单位增益 电压源 电源电压 缓冲器 高线性 |
| Title | A Highly Linear Low-Voltage Source-Degeneration Transconductor Based on Unity-Gain Buffer |
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