Prediction of high-temperature Chern insulator with half-metallic edge states in asymmetry-functionalized stanene - Zhang, Meng-han; Zhang, Chang-wen; Wang, Pei-ji; Li, Sheng-shi (Nanoscale, 2018)
Keywords: Asymmetry; Carrier mobility; Compressive properties; Computer simulation; Curie temperature; First principles; Insulators; Lattices; Magnetism; Predictions; Semiconductor devices; Transistors