Intersubband optical transitions in one dimensional quantum wire structures

One dimensional (1D) quantum wire structures are emerging as the new generation of semiconductor nanostructures offering exciting physical properties which have significant potential for novel device applications. These structures have been the subject of intensive investigation recently including e...

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Published inSuperlattices and microstructures Vol. 19; no. 3; pp. 217 - 228
Main Authors Sa'ar, A., Givant, A., Calderon, S., Ben-Shalom, O., Kapon, E., Gustafsson, A., Oberli, D., Caneau, C.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.01.1996
Elsevier
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Abstract One dimensional (1D) quantum wire structures are emerging as the new generation of semiconductor nanostructures offering exciting physical properties which have significant potential for novel device applications. These structures have been the subject of intensive investigation recently including extensive theoretical and experimental studies of their interband optical properties. In this work we present the results of our study of the intersubband optical transitions in 1D semiconductor quantum wires. The crescent shaped quantum wire structures used for this research were grown on non-planar GaAs substrates. The intersubband transition energy spectra, the selection rules, and the two dimensional envelope wavefunctions were theoretically investigated by using our new LENS (local envelope states) expansion. We present recent experimental results on modulation doped V-groove quantum wires, including PL, PLE, TEM, CL, and infrared polarization resolved spectroscopy. We have observed a very unusual absorption lineshape at the far-infrared wavelengths that we assigned to phonon assisted Fano resonance in a modulation doped quantum wire structure.
AbstractList One dimensional (1D) quantum wire structures are emerging as the new generation of semiconductor nanostructures offering exciting physical properties which have significant potential for novel device applications. These structures have been the subject of intensive investigation recently including extensive theoretical and experimental studies of their interband optical properties. In this work we present the results of our study of the intersubband optical transitions in 1D semiconductor quantum wires. The crescent shaped quantum wire structures used for this research were grown on non-planar GaAs substrates. The intersubband transition energy spectra, the selection rules, and the two dimensional envelope wavefunctions were theoretically investigated by using our new LENS (local envelope states) expansion. We present recent experimental results on modulation doped V-groove quantum wires, including PL, PLE, TEM, CL, and infrared polarization resolved spectroscopy. We have observed a very unusual absorption lineshape at the far-infrared wavelengths that we assigned to phonon assisted Fano resonance in a modulation doped quantum wire structure.
Author Caneau, C.
Kapon, E.
Ben-Shalom, O.
Givant, A.
Calderon, S.
Oberli, D.
Sa'ar, A.
Gustafsson, A.
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  surname: Caneau
  fullname: Caneau, C.
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Issue 3
Keywords Aluminium arsenides
Fano effect
Quantum wires
Gallium arsenides
Inorganic compounds
Line shape
Envelope function
Interband transitions
Ternary compounds
Photoluminescence
Theoretical study
Binary compounds
Subband
Infrared spectra
Cathodoluminescence
Experimental study
Energy-level transitions
Absorption spectra
III-V semiconductors
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Snippet One dimensional (1D) quantum wire structures are emerging as the new generation of semiconductor nanostructures offering exciting physical properties which...
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StartPage 217
SubjectTerms Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Title Intersubband optical transitions in one dimensional quantum wire structures
URI https://dx.doi.org/10.1006/spmi.1996.0025
Volume 19
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